STD16NF06LT4 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET; N沟道60V - 0.060 - 24A DPAK / IPAK的STripFET II功率MOSFET
| 型号： | STD16NF06LT4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET |
| 文件： | 总11页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD16NF06L
N-CHANNEL 60V - 0.060 Ω - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Figure 1:Package
Table 1: General Features
V
R
I
D
TYPE
DSS
DS(on)
STD16NF06L
60 V
< 0.070 Ω
24 A
■
■
■
TYPICAL RDS(on) = 0.060 Ω
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
3
3
2
1
■
1
IPAK
TO-251
DPAK
TO-252
(Suffix “-1”)
(Suffix “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
Figure 2: Internal Schematic Diagram
less critical alignment steps therefore
a
remarkable manufacturing reproducibility
APPLICATIONS
■
SWITCHING APPLICATIONS
Table 2: Order Codes
SALES TYPE
STD16NF06LT4
MARKING
D16NF06L
D16NF06L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
STD16NF06L-1
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DS
Drain-source Voltage (V = 0)
60
60
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
Gate- source Voltage
± 18
24
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
17
A
D
C
I
(•)
Drain Current (pulsed)
96
A
DM
P
tot
Total Dissipation at T = 25°C
40
W
C
Derating Factor
0.27
11.5
200
W/°C
V/ns
mJ
(1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
dv/dt
(2)
E
AS
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(1) I ≤16A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
j JMAX
SD
DD
(BR)DSS
o
(2) Starting T = 25 C, I = 20A, V = 48V
j
D
DD
Rev. 3.0
March 2005
1/11
STD16NF06L
Table 4: THERMAL DATA
Thermal Resistance Junction-case
Thermal Resistance Junction-PCB
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
3.75
62
275
°C/W
°C/W
°C
Rthj-case
Rthj-pcb
(*)
T
l
(*)
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
D
= 250 µA, V = 0
60
V
V
GS
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
I
DSS
GSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 18V
±100
nA
Current (V = 0)
DS
Table 6: ON (5)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
DS
= V
I
D
= 250 µA
Gate Threshold Voltage
1
V
GS(th)
GS
V
V
= 10 V
= 5 V
I
I
= 8 A
= 8 A
Static Drain-source On
Resistance
0.060
0.070
0.070
0.085
Ω
Ω
R
GS
D
D
DS(on)
GS
Table 7: DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 12 A
Min.
Typ.
Max.
Unit
(*)
V
DS
I
D
g
Forward Transconductance
12
S
fs
C
V = 25V f = 1 MHz V = 0
DS GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
370
69
30
pF
pF
pF
iss
C
oss
C
rss
2/11
STD16NF06L
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V
Min.
Typ.
Max.
Unit
V
R
I
D
= 8 A
= 5 V
t
Turn-on Delay Time
Rise Time
12
30
ns
ns
DD
d(on)
= 4.7 Ω
V
GS
t
G
r
(Resistive Load, Figure 17)
Q
V
DD
= 30 V I = 16 A V = 5 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7.5
2.5
4.2
nC
nC
nC
g
D
GS
Q
gs
Q
gd
Table 9: SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V
Min.
Min.
Typ.
Max.
Max.
Unit
V
R
I
= 8 A
= 5 V
Turn-off Delay Time
Fall Time
20
6
ns
ns
t
DD
D
d(off)
= 4.7Ω,
V
GS
t
f
G
(Resistive Load, Figure 17)
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
SD
( )
I
•
SDM
(*)
I
I
= 64 A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
t
rr
=16 A
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
53
85
3.2
ns
µC
A
SD
Q
V
= 25 V
T = 150°C
rr
DD
j
I
(see test circuit, Figure 19)
RRM
(1 )
(2)
Pulse width limited by safe operating area.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
3/11
STD16NF06L
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
4/11
STD16NF06L
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
5/11
STD16NF06L
Figure 16: Unclamped Inductive Waveform
Figure 15: Unclamped Inductive Load Test Circuit
Figure 17: Switching Times Test Circuits For Resis-
tive Load
Figure 18: Gate Charge test Circuit
Figure 19: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STD16NF06L
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
7/11
STD16NF06L
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/11
STD16NF06L
*on sales type
9/11
STD16NF06L
Table 11:Revision History
Date
Revision
Description of Changes
March 2005
3.0
ADDED PACKAGE TO-251
10/11
STD16NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
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11/11
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