STD6N52K3 [STMICROELECTRONICS]
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3? Power MOSFET; N沟道525 V， 1 Ω ， 5 A， DPAK ， TO- 220FP SuperMESH3 ？功率MOSFET
| 型号： | STD6N52K3 |
| 厂家： | 
ST |
| 描述： | N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3? Power MOSFET |
| 文件： | 总12页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD6N52K3
STF6N52K3
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP
SuperMESH3™ Power MOSFET
Preliminary Data
Features
RDS(on)
max
Type
VDSS
ID
Pw
STD6N52K3
STF6N52K3
525 V
525 V
< 1.2 Ω
< 1.2 Ω 5 A(1) 25 W
5 A
70 W
3
3
2
1
1. Limited by package
1
DPAK
TO-220FP
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1.
Device summary
Order codes
Marking
Package
DPAK
TO-220FP
Packaging
STD6N52K3
STF6N52K3
6N52K3
6N52K3
Tape and reel
Tube
September 2008
Rev 1
1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
12
Contents
STD6N52K3 - STF6N52K3
Contents
1
2
3
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STD6N52K3 - STF6N52K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
DPAK
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
525
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
5
5 (1)
3.15(1)
20 (1)
25
A
A
ID
3.15
20
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
70
W
0.56
0.2
W/°C
V/ns
dv/dt (3) Peak diode recovery voltage slope
9
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
--
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
DPAK
1.79
50
TO-220FP
Unit
°C/W
°C/W
°C/W
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
5
--
--
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
TBD
A
Single pulse avalanche energy
EAS
TBD
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50V)
3/12
Electrical characteristics
STD6N52K3 - STF6N52K3
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
525
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
30 V
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
3
3.75
1.0
4.5
1.2
VGS = 10 V, ID = 2.5 A
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
gfs (1)
VDS = 15 V, ID = 2.5 A
TBD
S
Input capacitance
Ciss
Coss
Crss
TBD
TBD
TBD
pF
pF
pF
Output capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
COSS eq
VGS = 0, VDS = 0 to 240 V
f = 1 MHz open drain
TBD
TBD
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 240 V, ID = 5 A,
VGS = 10 V
TBD
TBD
TBD
nC
nC
nC
(see Figure 3)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
TBD
TBD
TBD
TBD
ns
ns
ns
ns
VDD = 150 V, ID = 3.15 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Turn-off-delay time
Fall time
4/12
STD6N52K3 - STF6N52K3
Electrical characteristics
Min. Typ. Max. Unit
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
6.3
25
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 5 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TBD
TBD
TBD
ns
nC
A
ISD = 5 A, di/dt = 100 A/µs
Qrr
VDD = 60 V (see Figure 7)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 7)
TBD
TBD
TBD
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
Gate-source breakdown
voltage
(1)
BVGSO
Igs= 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/12
Test circuits
STD6N52K3 - STF6N52K3
3
Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped Inductive load test
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
6/12
STD6N52K3 - STF6N52K3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/12
Package mechanical data
STD6N52K3 - STF6N52K3
TO-220FP mechanical data
mm.
inch
Dim.
Min.
4.40
2.5
Typ
Max.
4.60
2.7
Min.
Typ.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.95
2.40
10
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16
0.630
28.6
9.80
2.9
30.6
10.60
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
15.90
9
16.40
9.30
3.2
3
L3
L6
L7
Dia
1
2 3
L5
L2
L4
7012510-I
8/12
STD6N52K3 - STF6N52K3
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
9/12
Package mechanical data
STD6N52K3 - STF6N52K3
5
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
10/12
STD6N52K3 - STF6N52K3
Revision history
6
Revision history
Table 10. Document revision history
Date
Revision
Changes
03-Sep-2008
1
Initial release
11/12
STD6N52K3 - STF6N52K3
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12/12
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