STD7NM60N [STMICROELECTRONICS]
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET; N型沟道600伏, 5A, 0.84欧姆, DPAK ,TO- 220FP , TO-220, IPAK第二代的MDmesh功率MOSFET型号: | STD7NM60N |
厂家: | ST |
描述: | N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET |
文件: | 总17页 (文件大小:885K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK
second generation MDmesh™ Power MOSFET
Features
VDSS @
TJmax
RDS(on)
max.
Order codes
ID
3
2
3
2
1
1
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
TO-220
IPAK
650 V
< 0.9 Ω
5 A
3
■ 100% avalanche tested
1
3
2
1
■ Low input capacitance and gate charge
■ Low gate input resistance
DPAK
TO-220FP
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
$ꢅꢆꢇ
These devices are N-channel Power MOSFETs
realized using the second generation of
TM
MDmesh technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
'ꢅꢁꢇ
capability and excellent avalanche characteristics.
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
DPAK
Packaging
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
Tape and reel
Tube
TO-220FP
TO-220
IPAK
7NM60N
Tube
Tube
November 2010
Doc ID 16472 Rev 4
1/17
www.st.com
17
Contents
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220, IPAK,
Parameter
Unit
TO-220FP
DPAK
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
600
25
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
5
3
5 (1)
3 (1)
20(1)
20
A
A
ID
(2)
IDM
20
45
A
PTOT
Total dissipation at TC = 25 °C
W
dv/dt (3) Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
2500
V
Tstg
Tj
Storage temperature
- 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
DPAK IPAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
2.78
100
6.25
°C/W
°C/W
°C/W
62.5
50
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Thermal data
Parameter
Value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
IAR
2
A
Single pulse avalanche energy
EAS
119
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Doc ID 16472 Rev 4
3/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
600
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
2
3
VGS = 10 V, ID = 2.5 A
0.84
0.9
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
363
24.6
1.1
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
pF
pF
Reverse transfer
capacitance
Output equivalent
capacitance
(1)
Coss eq.
VDS = 0 to 480 V, VGS = 0
f = 1 MHz open drain
-
-
130
5.4
-
-
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 5 A,
VGS = 10 V
14
2.7
7.7
nC
nC
nC
-
-
(see Figure 18)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
.
4/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
7
ns
VDD = 300 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
10
ns
-
-
Turn-off-delay time
Fall time
26
ns
12
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
5
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
20
(2)
VSD
Forward on voltage
ISD = 5 A, VGS = 0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
213
1.5
14
ns
nC
A
ISD = 5 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 60 V (see Figure 22)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
265
1.8
14
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16472 Rev 4
5/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK, IPAK Figure 3.
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220FP
Thermal impedance for TO-220
AM06474v1
100
10
10µs
I
D
(A)
100µs
1
1ms
Tj=150°C
Tc=25°C
10ms
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP Figure 5.
AM06475v1
100
10
10µs
100µs
1ms
1
I
D
(A)
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220
Figure 7.
AM06476v1
100
10
I
D
(A)
10µs
1
100µs
1ms
Tj=150°C
Tc=25°C
10ms
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
6/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM06477v1
AM06478v1
10
I
D
(A)
9
VGS=10V
VDS=20V
9
8
7
6V
8
7
6
5
4
6
5
I
D
(A)
4
5V
3
3
2
2
1
0
0
1
0
0
2
20
40
V
DS(V)
8
10
VGS(V)
10
4
6
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM06479v1
AM06480v1
V
DS
(V)
V
(V)
GS
R
DS(on)
(Ohm)
V
DD=480V
=5A
V
GS=10V
V
GS
0.88
12
I
D
500
VDS
0.86
0.84
0.82
10
8
400
300
200
6
0.80
4
2
0
0.78
0.76
0.74
100
0
2
3
4
5
1
6
12
14 16
Qg(nC)
ID(A)
10
0
2
4
8
0
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM06481v1
AM06482v1
C
Eoss
(pF)
(µJ)
2.5
1000
100
2.0
1.5
1.0
Ciss
Coss
Crss
10
1
0.5
0
0.1
100
200
400 500
600
1
10
V
DS(V)
0
100
300
VDS(V)
Doc ID 16472 Rev 4
7/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
AM06483v1
AM06484v1
V
GS(th)
(norm)
R
DS(on)
(norm)
ID=2.5A
2.1
1.10
ID=250µA
1.9
1.00
0.90
1.7
1.5
1.3
1.1
0.9
0.80
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J(°C)
0
25 50 75
TJ(°C)
100
100
Figure 16. Normalized B
vs temperature
VDSS
AM06485v1
BVDSS
(norm)
ID=1mA
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50
-25
0
25 50 75
TJ(°C)
100
8/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 16472 Rev 4
9/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 23. TO-220FP drawing mechanical data
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 16472 Rev 4
11/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
2.20
0.90
0.64
typ
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
A
A1
b
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
(L1)
L2
V1
1.20
0.80
10 o
0068771_H
12/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
Doc ID 16472 Rev 4
13/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
14/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
Doc ID 16472 Rev 4
15/17
Revision history
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
6
Revision history
Table 10. Document revision history
Date
Revision
Changes
29-Oct-2009
19-Jul-2010
11-Oct-2010
04-Nov-2010
1
2
3
4
First release.
Corrected values in Table 3: Thermal data.
Inserted new value in Table 6: Dynamic
Changed RDS(on) typical value.
16/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
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Doc ID 16472 Rev 4
17/17
相关型号:
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