STF15NM65N [STMICROELECTRONICS]
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET; N沟道650V - 0.25ヘ - 15.5A - TO- 220 / FP - D2 / I2PAK - TO- 247第二代MDmesh⑩功率MOSFET
| 型号： | STF15NM65N |
| 厂家： | 
ST |
| 描述： | N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET |
| 文件： | 总18页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF15NM65N-STI15NM65N-STW15NM65N
STB15NM65N-STP15NM65N
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247
Second generation MDmesh™ Power MOSFET
Features
VDSS
(@Tjmax)
Type
R
DS(on) Max
ID
3
2
3
1
2
1
STB15NM65N
STF15NM65N
STI15NM65N
STP15NM65N
STW15NM65N
710 V
710 V
710 V
710 V
710 V
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
15.5 A
15.5 A(1)
15.5 A
I²PAK
TO-220
3
2
1
15.5 A
TO-220FP
15.5 A
3
1. Limited only by maximum temperature allowed
1
3
2
1
■ 100% avalanche tested
D²PAK
TO-247
■ Low input capacitance and gate charge
■ Low gate input resistance
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Table 1.
Device summary
Order codes
Marking
Package
I²PAK
Packaging
STI15NM65N
STF15NM65N
STP15NM65N
15NM65N
15NM65N
15NM65N
15NM65N
15NM65N
Tube
Tube
TO-220FP
TO-220
D²PAK
Tube
STB15NM65NT4
STW15NM65N
Tape & reel
Tube
TO-247
September 2007
Rev 1
1/18
www.st.com
18
Contents
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220/I²PAK
D²PAK/TO-247
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS=0)
650
25
V
V
A
A
Gate-source voltage
15.5(1)
10(1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
15.5
ID
10
(2)
62(1)
35
Drain current (pulsed)
62
150
15
A
W
IDM
PTOT
dv/dt (3)
VISO
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
V
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤15.5A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value
TO-220/I²PAK
Parameter
Unit
TO-220FP
D²PAK/TO-247
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-amb Max
0.83
62.5
3.6
°C/W
°C/W
Maximum lead temperature for soldering
Tl
300
°C
purpose
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
4
A
Single pulse avalanche energy
EAS
400
mJ
(starting Tj=25 °C, ID= IAS, VDD= 50 V)
3/18
Electrical characteristics
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
ID = 1 mA, VGS = 0
650
V
breakdown voltage
Vdd=520 V, Id=15.5 A,
Vgs=10 V
dv/dt (1) Drain source voltage slope
30
V/ns
Zero gate voltage
IDSS
V
DS = Max rating
1
µA
µA
drain current (VGS = 0)
VDS = Max rating, @125 °C
100
Gate-body leakage
IGSS
VGS
VDS = VGS, ID = 250 µA
GS = 10 V, ID = 7.75 A
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
2
3
Static drain-source on
resistance
RDS(on)
V
0.25 0.27
Ω
1. Characteristics value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS=15 V I =7.75 A
15
S
, D
Input capacitance
Ciss
Coss
Crss
1900
110
10
pF
pF
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
VGS = 0 V,
Equivalent output
capacitance
(2)
Coss eq.
230
pF
V
DS = 0V to 520 V
VDD = 520 V, ID = 15.5 A,
GS = 10 V,
(see Figure 19)
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
55
9
nC
nC
nC
V
30
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Electrical characteristics
Min Typ Max Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
25
8
ns
ns
ns
ns
VDD =325 V, ID = 7.75 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Turn-off delay time
Fall time
80
26
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
Source-drain current
15.5
62
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 15.5 A, VGS = 0
1.3
V
ISD = 15.5 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
460
6
ns
µC
A
di/dt = 100 A/µs
VDD = 100 V, Tj = 25 °C
(see Figure 20)
Qrr
IRRM
27
ISD = 15.5 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
600
8
ns
µC
A
di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 20)
Qrr
IRRM
27
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 -
Figure 3. Thermal impedance for TO-220 -
2
2
2
2
D PAK - I PAK
D PAK - I PAK
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
6/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/18
Electrical characteristics
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B
vs temperature
VDSS
8/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Test circuit
3
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped Inductive load test
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/18
Package mechanical data
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
TO-220FP mechanical data
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.7
1.7
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Package mechanical data
2
TO-262 (I PAK) mechanical data
mm.
TYP
inch
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
TYP.
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/18
Package mechanical data
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
D²PAK mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
A1
A2
B
4.4
4.6
2.69
0.23
0.93
1.7
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
2.49
0.03
0.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
0.409
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.50
0.208
0.625
0.55
L
L2
L3
M
1.27
1.4
1.75
3.2
0.055
0.094
0.68
2.4
0.126
R
0.4
0.015
V2
0°
4°
14/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Package mechanical data
TO-247 MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
TYP.
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
15/18
Packaging mechanical data
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Revision history
6
Revision history
Table 9.
Date
06-Sep-2007
Document revision history
Revision
Changes
1
First release
17/18
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
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18/18
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N-channel 250V - 0.14ヘ - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET⑩ II Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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STMICROELECTR
STF18N55M5
N-channel 550 V, 0.18 Ω, 13 A, MDmesh⢠V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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STMICROELECTR
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