STGB3NB60SDT4 [STMICROELECTRONICS]
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT ; N沟道3A - 600V D2PAK的PowerMESH IGBT\n
| 型号： | STGB3NB60SDT4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
|
| 文件： | 总8页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGB3NB60SD
2
N-CHANNEL 3A - 600V D PAK
Power MESH™ IGBT
V
V
I
c
TYPE
CES
CE(sat)
STGB3NB60SD
600 V
<1.5 V
3 A
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■
■
■
■
■
VERY LOW ON-VOLTAGE DROP (V
)
cesat
HIGH CURRENT CAPABILITY
3
1
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED FREEWHEELING DIODE
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
2
D PAK
TO-263
(suffix“T4”)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
an advanced family of IGBTs, the PowerMESH™ IGBTs,
with outstanding perfomances. The suffix “S” identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
GAS DISCHARGE LAMP
STATIC RELAYS
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CES
Collector-Emitter Voltage (V = 0)
600
GS
V
GE
Gate-Emitter Voltage
± 20
V
I
Collector Current (continuos) at T =25°C
6
A
C
C
c
I
Collector Current (continuos)at T =100°C
3
25
A
c
I
(•)
Collector Current (pulsed)
A
CM
P
Total Dissipation at T = 25°C
70
W
tot
c
Derating Factor
0.46
W/°C
°C
°C
T
stg
Storage Temperature
–60 to 175
175
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area.
November 2000
1/8
STGB3NB60SD
THERMAL DATA
R
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
2.14
62.5
0.5
°C/W
°C/W
°C/W
thj-case
R
thj-amb
thc-sink
R
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Collector-Emitter
Test Conditions
= 250 µA = 0
Min.
Typ.
Max.
Unit
V
I
V
GE
600
BR(CES)
D
V
Breakdown Voltage
I
Collector cut-off (V = 0)
V
V
= Max Rating T = 25 °C
j
10
100
µA
µA
CES
GE
CE
= Max Rating T = 125 °C
CE
j
I
Gate-body Leakage
V
GS
= ± 20V
V
= 0
CE
±100
nA
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
V
= V
I = 250 µA
C
Gate Threshold Voltage
2.5
5
V
CE
GE
V
V
V
V
= 15 V
= 15 V
I
I
= 1.5 A
= 3 A
1
1.2
1.1
V
V
V
CE(SAT)
GE
GE
GE
C
C
Collector-Emitter Saturation
Voltage
1.5
= 15 V I = 3 A T = 125 °C
D
j
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
= 25 V
Min.
Typ.
2.5
255
30
Max.
Unit
S
g
V
V
I = 3 A
C
1.7
fs
CE
C
ies
= 25V f = 1 MHz V = 0
330
40
7
pF
pF
pF
CE
GE
C
Output Capacitance
oes
C
Reverse Transfer Capacitanc-
es
5.6
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
V
V
=480V I =3 A V =15 V
18
5.4
5.5
nC
nC
nC
A
G
GE
GC
CL
CE
C
GE
Q
Q
I
= 480 V
R = 1 KΩ
G
12
clamp
T =150 °C
j
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
DelayTime
Rise Time
V
V
= 480 V
= 15 V
I = 3 A
C
125
150
ns
ns
d(on)
CC
R
= 1 kΩ
t
r
GE
G
(di/dt)
Turn-on Current Slope
Turn-on Switching Losses
V
V
= 480 V
= 15 V
I = 3 A
C
50
1100
A/µs
µJ
on
CC
E
R
= 1 kΩ
on
GE
G
T =125 °C
j
2/8
STGB3NB60SD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
R
= 480 V
= 1 kΩ
I = 3 A
C
1.8
1.0
3.4
0.72
1.15
µs
µs
µs
µs
mJ
c
CC
t (
)
)
V
= 15 V
r Voff
t (
d Voff
GE
GE
t
f
E
( )
off **
t
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
R
= 480 V
= 1 kΩ
I
= 3 A
C
= 15 V
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
c
CC
t (
t (
)
)
V
r Voff
GE
GE
d Voff
t
off **
T = 125 °C
j
f
E
( )
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Forward Current
3
25
A
A
f
Forward Current pulsed
Forward On-Voltage
I
fm
I = 3 A
I = 1 A
f
1.55
1.15
1.9
V
V
f
V
f
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I = 3 A
di/dt = 100 A/µs
V = 200 V
R
T = 125 °C
j
1700
4500
9.5
ns
nC
A
rr
f
rr
I
rrm
(•)Pulse width limited by max. junction temperature
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGB3NB60SD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter on Voltage vs Temperature
Collector-Emiter on Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGB3NB60SD
Normalized Breakdown Voltage vs Temperature
Gate charge Gate-Emitter Voltage
Off Switching Losses vs Tj
Capacitance Variations
Off Switching Losses vs Ic
Swittching Off Safe Operating Area
5/8
STGB3NB60SD
Diode Forward vs Tj
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2 Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/8
STGB3NB60SD
2
D PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
7/8
STGB3NB60SD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
© 2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
8/8
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