STH175N4F6-6AG [STMICROELECTRONICS]
Very low on-resistance;
| 型号： | STH175N4F6-6AG |
| 厂家： | 
ST |
| 描述： | Very low on-resistance |
| 文件： | 总18页 (文件大小：594K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH175N4F6-2AG,
STH175N4F6-6AG
Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™
F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet production data
-
Features
Order codes
VDS
RDS(on) max
ID
TAB
TAB
STH175N4F6-2AG
STH175N4F6-6AG
40 V
2.4 mΩ
120 A
7
2
1
3
• Designed for automotive applications and
1
AEC-Q101 qualified
H2PAK-2
• Very low on-resistance
• Very low gate charge
H2PAK-6
• High avalanche ruggedness
• Low gate drive power loss
Figure 1. Internal schematic diagram
Applications
D(TAB)
D(TAB)
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFETs exhibit very low RDS(on) in all
packages.
G(1)
G(1)
S(2, 3)
S(2, 3, 4, 5, 6, 7)
2
2
H PAK-6
H PAK-2
AM14551V1
Table 1. Device summary
Order codes
Marking
Package
Packaging
STH175N4F6-2AG
STH175N4F6-6AG
H2PAK-2
H2PAK-6
175N4F6
Tape and reel
February 2015
DocID027534 Rev 1
1/18
This is information on a product in full production.
www.st.com
Contents
STH175N4F6-2AG, STH175N4F6-6AG
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2
3.1
3.2
H PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
H PAK-6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
VDS
VGS
Drain-source voltage
40
V
V
Gate-source voltage
± 20
120
120
480
150
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
A
(1)
ID
A
(1)
IDM
A
PTOT
Tstg
Tj
Total dissipation at TC = 25 °C
Storage temperature
W
- 55 to 175
°C
Operating junction temperature
1. Current limited by package
Table 3. Thermal data
Parameter
Symbol
Value
Unit
Rthj-case Thermal resistance junction-case max
1.0
35
°C/W
°C/W
(1)
Rthj-pcb
Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
DocID027534 Rev 1
3/18
18
Electrical characteristics
STH175N4F6-2AG, STH175N4F6-6AG
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
VGS = 0, ID = 250 µA
40
V
V
V
GS = 0, VDS = 40 V
GS = 0, VDS = 40 V,
1
µA
µA
Zero gate voltage
Drain current
IDSS
100
TC=125 °C
Gate-body leakage
current
IGSS
VDS = 0, VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
± 100 nA
VGS(th) Gate threshold voltage
3
4.5
2.4
V
Static drain-source
RDS(on)
1.9
mΩ
on-resistance
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
Ciss
Input capacitance
Output capacitance
-
-
7735
745
-
-
pF
pF
Coss
VGS = 0, VDS = 20 V,
f = 1 MHz
Reverse transfer
capacitance
Crss
-
560
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
-
-
130
36
-
-
-
nC
nC
nC
VDD = 20 V, ID = 120 A,
V
GS = 10 V
42
Table 6. Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
-
-
-
-
24
150
106
57
-
-
-
-
ns
ns
ns
ns
VDD = 20 V, ID = 60 A
R
G = 4.7 Ω VGS = 10 V
Turn-off-delay time
Fall time
4/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Electrical characteristics
Min. Typ. Max. Unit
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
(1)
ISD
-
-
-
-
-
-
120
480
1.3
A
A
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
VGS = 0, ISD = 120 A
SD = 120 A, VDD = 32 V
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
36
40
ns
nC
A
I
Qrr
di/dt = 100 A/µs,
Tj = 25 °C
IRRM
2.3
1. Limited by package, current allowed by silicon 177 A
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027534 Rev 1
5/18
18
Electrical characteristics
STH175N4F6-2AG, STH175N4F6-6AG
Figure 3. Thermal impedance
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 5. Transfer characteristics
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Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
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6/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Figure 8. Capacitance variations
Electrical characteristics
Figure 9. Normalized gate threshold voltage vs
temperature
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Figure 10. Normalized on-resistance vs
temperature
Figure 11. Normalized V(BR)DSS vs temperature
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Figure 12. Source-drain diode forward
characteristics
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DocID027534 Rev 1
7/18
18
Package information
STH175N4F6-2AG, STH175N4F6-6AG
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
8/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
2
Package information
3.1
H PAK-2 package information
Figure 13. H²PAK-2 outline
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DocID027534 Rev 1
9/18
18
Package information
STH175N4F6-2AG, STH175N4F6-6AG
Table 8. H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
10/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Package information
Figure 14. H²PAK-2 recommended footprint (dimensions in mm)
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DocID027534 Rev 1
11/18
18
Package information
2
STH175N4F6-2AG, STH175N4F6-6AG
3.2
H PAK-6 package information
Figure 15. H²PAK-6 outline
8159693_Rev_F
12/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Package information
Table 9. H²PAK-6 mechanical data
mm
Dim.
Min.
4.30
Typ.
Max.
A
A1
C
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.5
e
e1
e2
E
F
H
-
H1
L
L1
L2
L3
L4
M
R
1.90
0.20
0°
V
DocID027534 Rev 1
13/18
18
Package information
STH175N4F6-2AG, STH175N4F6-6AG
Figure 16. H²PAK-6 recommended footprint (dimensions are in mm)
footprint_Rev_F
14/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Packing information
4
Packing information
Figure 17. Tape dimension
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
DocID027534 Rev 1
15/18
18
Packing information
STH175N4F6-2AG, STH175N4F6-6AG
Figure 18. Reel dimension
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. H²PAK-2 and H²PAK-6 tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
13.2
26.4
30.4
1.5
12.8
20.2
24.4
100
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
16/18
DocID027534 Rev 1
STH175N4F6-2AG, STH175N4F6-6AG
Revision history
5
Revision history
Table 11. Document revision history
Changes
Date
Revision
19-Feb-2015
1
First release.
DocID027534 Rev 1
17/18
18
STH175N4F6-2AG, STH175N4F6-6AG
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
18/18
DocID027534 Rev 1
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