STN2NF10_07 [STMICROELECTRONICS]
N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET; N沟道100V - 0.23ヘ - 2.4A - SOT- 223 STripFET⑩ II功率MOSFET
| 型号： | STN2NF10_07 |
| 厂家： | 
ST |
| 描述： | N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET |
| 文件： | 总13页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2NF10
N-channel 100V - 0.23Ω - 2.4A - SOT-223
STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STN2NF10
100V
< 0.26Ω
2.4A
2
3
Description
2
1
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
SOT-223
remarkable manufacturing reproducibility.
Application
Internal schematic diagram
■ Switching application
– DC-DC converters
Order code
Part number
Marking
Package
Packaging
STN2NF10
N2NF10
SOT-223
Tape & reel
April 2007
Rev 6
1/13
www.st.com
13
Contents
STN2NF10
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STN2NF10
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
100
20
Unit
V
VDS
VGS
ID
Drain-source voltage (VGS=0)
Gate-source voltage
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
2.4
A
ID
1.5
A
(1)
Drain current (pulsed)
Derating factor
17
A
IDM
0.026
3.3
W/°C
W
(2)
Total dissipation at TC = 25°C
PTOT
(3)
Single pulse avalanche energy
200
30
mJ
EAS
dv/dt (4)
Peak diode recovery voltage slope
V/ns
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Pulse width limited by safe operating area
2. This value is rated according to Rthj-amb, t < 10sec
3. IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C
4. ISD < 6A, di/dt < 500A/µs, VDD= 80% V(BR)DSS
Table 2.
Thermal data
Symbol
Parameter
Value
38
Unit
°C/W
°C/W
Rthj-amb (1)
Rthj-amb (2)
Thermal resistance junction-amb
Thermal resistance junction-amb
62.5
1. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec)
2. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec)
3/13
Electrical characteristics
STN2NF10
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
On/off states
Parameter
Symbol
Test conditions
ID = 250µA, VGS= 0
VDS = Max rating,
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
100
V
1
10
1
µA
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,Tc=125°C
VDS = 30V, Tc=125°C
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
100
nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
VGS= 10V, ID= 1.2A
Gate threshold voltage
2
4
V
Static drain-source on
resistance
0.23 0.26
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs
VDS =15V, ID=1.2A
Forward transconductance
2.5
S
Input capacitance
Ciss
Coss
Crss
280
45
pF
pF
pF
Output capacitance
VDS =25V, f=1MHz, VGS=0
Reverse transfer
capacitance
20
Qg
Qgs
Qgd
VDD=80V, ID = 6A
GS =10V
(see Figure 15)
Total gate charge
Gate-source charge
Gate-drain charge
10
2.5
4
14
nC
nC
nC
V
4/13
STN2NF10
Electrical characteristics
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VDD=50V, ID = 2.4A
VGS =10V, RG=4.7Ω
(see Figure 14)
td(on)
tr
Turn-on delay time
Rise time
6
ns
ns
10
VDD=50V, ID = 2.4A
VGS =10V, RG=4.7Ω
(see Figure 14)
td(off)
tf
Turn-off delay time
Fall time
20
3
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
Source-drain current
2.4
17
A
A
(1)
Source-drain current (pulsed)
ISDM
(2)
I
SD= 2.4A, VGS=0
Forward on voltage
1.2
V
VSD
trr
ISD= 6A, VDD=10V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
70
175
5
ns
nC
A
Qrr
di/dt=100A/µs,Tj=150°C
IRRM
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/13
Electrical characteristics
STN2NF10
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Output characteristics
Transconductance
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Figure 3.
Figure 5.
6/13
Transfer characteristics
Static drain-source on resistance
STN2NF10
Figure 7.
Electrical characteristics
Gate charge vs. gate-source
voltage
Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BV
vs. temperature
DSS
7/13
Electrical characteristics
STN2NF10
Figure 13. Max drain current vs. temperature
8/13
STN2NF10
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/13
Package mechanical data
STN2NF10
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STN2NF10
Package mechanical data
SOT-223 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
MIN.
TYP.
MAX.
0.071
0.031
0.122
0.013
0.264
A
B
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10o
0.130
0.264
0.146
0.287
10o
H
V
A1
0.02
P008B
11/13
Revision history
STN2NF10
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
14-Sep-2006
29-Mar-2007
04-Apr-2007
4
5
6
The document has been reformatted
Figure 1 has been updated
New test condition for IDSS on Table 3
12/13
STN2NF10
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
13/13
相关型号：
STN3N45K3
N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3⢠Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明