STN7NF10 [STMICROELECTRONICS]
N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET⑩ II POWER MOSFET; N沟道100V - 0.055欧姆 - 5A SOT- 223低栅电荷STripFET⑩ II功率MOSFET
| 型号： | STN7NF10 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN7NF10
N-CHANNEL 100V - 0.055 Ω - 5A SOT-223
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STN7NF10
100 V
< 0.065 Ω
5 A
■
■
TYPICAL R (on) = 0.055 Ω
APPLICATION ORIENTED
CHARACTERIZATION
DS
2
3
2
1
SOT-223
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
100
100
±20
5
Unit
V
DS
Drain-source Voltage (V = 0)
V
V
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
3.4
A
D
C
I
( )
Drain Current (pulsed)
20
A
DM
P
TOT
Total Dissipation at T = 25°C
3.3
W
W/°C
C
Derating Factor
0.026
T
Storage Temperature
Operating Junction Temperature
stg
–55 to 150
°C
T
j
(●) Pulse width limited by safe operating area
December 2002
1/8
STN7NF10
THERMAL DATA
Rthj-PCB
Rthj-PCB
Thermal Resistance Junction-PCB Max(*)
38
°C/W
°C/W
°C
Thermal Resistance Junction-PCB Max(**)
100
260
T
Maximum Lead Temperature For Soldering Purpose
l
(1.6 mm from case,for 10s)
2
Note: (*) When mounted on 1 in FR-4 BOARD,2 oz Cu, t<10s.
Note: (**) When mounted on minimum footprint.
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
100
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
R
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10V, I = 1.5 A
0.055
0.065
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
12
Max.
Unit
S
g
(1)
V
= 15 V , I = 1.5 A
fs
DS
D
C
C
V
= 25 V, f = 1 MHz, V = 0
870
125
pF
pF
iss
DS
GS
Output Capacitance
oss
Reverse Transfer
Capacitance
C
rss
52
pF
2/8
STN7NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 50 V, I = 12 A
Turn-on Delay Time
58
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
45
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 80 V, I = 24 A,
= 10 V
30
6
10
41
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
DD
= 50 V, I = 12 A,
49
17
ns
ns
d(off)
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
5
Unit
A
I
Source-drain Current
SD
I
(1)
(2)
Source-drain Current (pulsed)
Forward On Voltage
20
A
SDM
V
I
I
= 5 A, V = 0
1.3
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
100
375
7.5
ns
nC
A
= 5 A, di/dt = 100A/µs,
= 30 V, T = 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/8
STN7NF10
Safe Operating Area
Thermal Impedence
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STN7NF10
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN7NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STN7NF10
SOT-223 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
MIN.
MAX.
0.071
0.031
0.122
0.013
0.264
A
B
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10o
0.130
0.264
0.146
0.287
10o
H
V
A1
0.02
P008B
7/8
STN7NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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