STP11N65M5 [STMICROELECTRONICS]
N沟道650 V、0.43 Ohm典型值、9 A MDmesh M5功率MOSFET，TO-220封装;
| 型号： | STP11N65M5 |
| 厂家： | 
ST |
| 描述： | N沟道650 V、0.43 Ohm典型值、9 A MDmesh M5功率MOSFET，TO-220封装 局域网 开关 脉冲 晶体管 |
| 文件： | 总25页 (文件大小：1281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
TAB
TAB
2
1
VDSS
TJmax
@
RDS(on)
max
2
3
Order codes
ID
3
1
3
2
D2PAK
DPAK
1
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
TO-220FP
TAB
710 V
< 0.48 Ω
9 A
3
2
1
3
2
1
IPAK
TO-220
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Figure 1.
Internal schematic diagram
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Applications
■ Switching applications
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Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
3ꢅꢉꢈ
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resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
Device summary
Order codes
Marking
Package
D2PAK
Packaging
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Tape and reel
Tube
DPAK
TO-220FP
TO-220
IPAK
11N65M5
December 2012
Doc ID 022864 Rev 2
1/25
This is information on a product in full production.
www.st.com
25
Contents
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
D2PAK
DPAK
TO-220
IPAK
Symbol
Parameter
Unit
TO-220FP
VGS
ID
Gate-source voltage
25
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
9
9 (1)
5.6 (1)
36 (1)
25
A
A
ID
5.6
36
85
(1)
IDM
A
PTOT
Total dissipation at TC = 25 °C
W
dv/dt (2) Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
2500
V
Tstg
Tj
Storage temperature
- 55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. ≤ 9 A, di/dt ≤400 A/µs; V peak < V
I
, V =400 V
DD
SD
DS
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
D2PAK DPAK TO-220FP TO-220 IPAK
Unit
Thermal resistance junction-case
max
Rthj-case
1.47
5.0
1.47
°C/W
°C/W
Thermal resistance junction-pcb
max
(1)
Rthj-pcb
30
50
Thermal resistance junction-
ambient max
Rthj-amb
62.5
100 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax
IAR
2
A
)
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
EAS
130
mJ
Doc ID 022864 Rev 2
3/25
Electrical characteristics
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
VDS = 650 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
650
V
Zero gate voltage
1
µA
µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100 nA
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
3
4
5
V
V
GS = 10 V, ID = 4.5 A
0.43
0.48
Ω
on-resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
644
18
pF
V
DS = 100 V, f = 1 MHz,
-
-
-
pF
pF
VGS = 0
Reverse transfer
capacitance
2.5
Equivalent
capacitance time
related
(1)
Co(tr)
-
55
pF
VDS = 0 to 520 V, VGS = 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
Co(er)
-
-
17
5
-
-
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 4.5 A,
VGS = 10 V
17
4.6
8.5
nC
nC
nC
-
-
(see Figure 20)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V increases from 0 to 80% V
DS
DSS
4/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
td(v)
tr(v)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
23
10
ns
ns
ns
ns
VDD = 400 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21 and
Figure 24)
-
-
tf(i)
13.5
13
tc(off)
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
9
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
36
(2)
VSD
Forward on voltage
ISD = 9 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
232
2
ns
µC
A
ISD = 9 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 100 V (see Figure 21)
IRRM
17.5
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
DD = 100 V, Tj = 150 °C
(see Figure 21)
328
2.8
17
ns
µC
A
Qrr
V
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022864 Rev 2
5/25
Electrical characteristics
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK and Figure 3.
IPAK
Thermal impedance DPAK and IPAK
AM15398v1
I
D
(A)
10µs
10
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
1
10
VDS(V)
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM15399v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
1
10
VDS(V)
100
Figure 6.
Safe operating area for TO-220 and Figure 7.
D2PAK
Thermal impedance for TO-220 and
D2PAK
AM15400v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
1
10
VDS(V)
100
6/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM15401v1
AM15402v1
I
D
(A)
I
D
(A)
V
GS=10V
16
16
8V
V
DS=25V
14
14
12
10
7V
12
10
8
8
6
6
4
4
2
0
2
0
6V
25 VDS(V)
4
6
7
20
5
VGS(V)
9
0
5
10
3
8
15
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM15403v1
DS
AM15404v1
R
DS(on)
(Ω)
V
(V)
GS
V
(V)
V
DD=520V
=4.5A
0.55
12
V
GS=10V
500
I
D
0.5
10
8
400
300
200
0.45
0.4
6
0.35
4
100
0
0.3
2
0
0.25
1
2
6
Qg(nC)
3
4
5
7
8
ID(A)
0
0
5
10
15
20
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM15406v1
AM15405v1
Eoss
C
(µJ)
(pF)
3.5
1000
100
3
2.5
2
Ciss
1.5
Coss
Crss
1
10
1
0.5
0
200
400
0.1
10
100
600
VDS(V)
V
DS(V)
0
1
Doc ID 022864 Rev 2
7/25
Electrical characteristics
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Normalized gate threshold voltage
vs temperature
AM05459v1
AM05460v1
V
GS(th)
R
DS(on)
(norm)
V
DS = VGS
(norm)
V
GS = 10 V
ID = 250 µA
1.10
2.1
I
D = 4.5 A
1.9
1.7
1.5
1.3
1.1
1.00
0.90
0.80
0.9
0.7
0.5
-50
0.70
-50
-25
0
25 50 75
100
TJ(°C)
-25
0
25 50 75
TJ
(°C)
100
Figure 16. Drain-source diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
AM10399v1
AM05461v1
V
DS
V
(V)
SD
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.04
1.02
1.00
1.0
0.8
0.6
TJ=25°C
TJ=150°C
0.98
0.4
0.2
0.96
0.94
0.92
0
-50
0
-25
0
25 50 75
100
TJ(°C)
10
20
30
40
50 ISD(A)
Figure 18. Switching losses vs gate
resistance(1)
AM15407v1
E
(μJ)
100
80
VDD=400V
VGS=10V
ID=6A
Eon
60
40
Eoff
20
0
RG(Ω)
0
5
10 15 20
35 40
45
25 30
1. Eon including reverse recovery of a SiC diode
8/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
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Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
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Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
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Doc ID 022864 Rev 2
9/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Package mechanical data
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 022864 Rev 2
11/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 25. D²PAK (TO-263) drawing
0079457_T
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
12/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Table 10. DPAK (TO-252) mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
Doc ID 022864 Rev 2
13/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 27. DPAK (TO-252) drawing
0068772_I
Figure 28. DPAK footprint(b)
6.7
3
1.8
1.6
2.3
2.3
6.7
1.6
AM08850v1
b. All dimensions are in millimeters
14/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Table 11. TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 022864 Rev 2
15/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 29. TO-220FP drawing
7012510_Rev_K_B
16/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Table 12. TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 022864 Rev 2
17/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 30. TO-220 type A drawing
0015988_typeA_Rev_S
18/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Table 13. IPAK (TO-251) mechanical data
Package mechanical data
mm.
DIM
min.
typ.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
Doc ID 022864 Rev 2
19/25
Package mechanical data
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Figure 31. IPAK (TO-251) drawing
0068771_J
20/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Packaging mechanical data
5
Packaging mechanical data
Table 14. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
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Packaging mechanical data STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
Table 15. D²PAK (TO-263) tape and reel mechanical data
Tape
mm
Reel
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
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Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Packaging mechanical data
Figure 32. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
P2
Top cover
D
T
tape
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 33. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
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Revision history
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
6
Revision history
Table 16. Document revision history
Date
Revision
Changes
23-Feb-2012
1
First release.
– Minor text changes in cover page
– Added IPAK packages
– Added Section 2.1: Electrical characteristics (curves)
– Updated Section 5: Packaging mechanical data
– Modified: note 2 on Table 2
03-Dec-2012
2
– Updated: mechanical data for TO-220FP package
24/25
Doc ID 022864 Rev 2
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
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