STP1N120 [STMICROELECTRONICS]
channel 1200V - 30ヘ - 500mA - TO-220 Zener - protected SuperMESH⑩ Power MOSFET; 通道1200V - 30ヘ - 500毫安 - TO- 220齐纳 - 保护SuperMESH⑩功率MOSFET
| 型号： | STP1N120 |
| 厂家： | 
ST |
| 描述： | channel 1200V - 30ヘ - 500mA - TO-220 Zener - protected SuperMESH⑩ Power MOSFET |
| 文件： | 总10页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP1N120
N-channel 1200V - 30Ω - 500mA - TO-220
Zener - protected SuperMESH™ Power MOSFET
PRELIMINARY DATA
General features
Type
VDSS
RDS(on)
ID
PW
STP1N120
1200V
< 38Ω 500mA
45W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ ESD improved capability
■ New high voltage benchmark
■ Gate charge minimized
3
2
1
TO-220
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STP1N120
P1N120
TO-220
Tube
September 2006
Rev 1
1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
10
Contents
STP1N120
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
STP1N120
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
1200
30
Unit
V
VDS
VGS
ID
Drain-source voltage (VGS=0)
Gate-source voltage
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
500
mA
mA
ID
315
(1)
Drain current (pulsed)
2
A
IDM
Derating factor
0.36
45
W/°C
W
PTOT
Total dissipation at TC = 25°C
dv/dt (2)
Peak diode recovery voltage slope
Tbd
V/ns
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Pulse width limited by safe operating area
2. ISD ≤1A, di/dt ≤200A/µs, VDD ≤960
Table 2.
Thermal data
Symbol
Parameter
Value
2.78
Unit
°C/W
°C/W
Rthj-case Thermal resistance junction-case max
Rthj-amb (1)
Thermal resistance junction-amb max
62.5
Maximum lead temperature for soldering
Tl
300
°C
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
IAS
Tbd
A
Single pulse avalanche energy
EAS
Tbd
mJ
(starting Tj=25°C, ID=IAS, VDD= 50V)
3/10
Electrical characteristics
STP1N120
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
On/off states
Parameter
Symbol
Test conditions
ID = 1mA, VGS= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
1200
V
V
DS = Max rating,
DS = Max rating,Tc=125°C
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
V
50
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
10
µA
VGS(th)
RDS(on)
VDS= VGS, ID = 50µA
VGS= 10V, ID= 0.25A
Gate threshold voltage
3
3.75
30
4.5
38
V
Static drain-source on
resistance
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
VDS =25V, f=1MHz, VGS=0
VDD=960V, ID = 500mA
Min. Typ. Max. Unit
Input capacitance
Ciss
Coss
Crss
130
22
3
pF
pF
pF
Output capacitance
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
7
nC
nC
nC
VGS =10V
Tbd
Tbd
(see Figure 2)
4/10
STP1N120
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Tbd
Turn-off delay time
Fall time
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
500
2
mA
A
ISDM
Source-drain current (pulsed)
(1)
ISD=1A, VGS=0
Forward on voltage
Tbd
V
VSD
trr
ISD=1A, VDD=100V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Tbd
Tbd
Tbd
ns
nC
A
Qrr
di/dt = 50A/µs,Tj=25°C
IRRM
(see Figure 6)
trr
ISD=1A,VDD=100V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Tbd
Tbd
Tbd
ns
nC
A
Qrr
di/dt=50A/µs,Tj=150°C
IRRM
(see Figure 6)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
30
(1)
Gate-source breakdown voltage Igs 1mA, (open drain)
V
BVGSO
1. The built-in-back zener diodes have specifically been designed to enhance not only the device’s ESD
capability, but also to make them safely absorb possibile voltage transients that may occasionally be
applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and ost-
effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage
of external components.
5/10
Test circuit
STP1N120
3
Test circuit
Figure 1. Switching times test circuit for
resistive load
Figure 2. Gate charge test circuit
Figure 3. Test circuit for inductive load
switching and diode recovery times
Figure 4. Unclamped inductive load test
circuit
Figure 5. Unclamped inductive waveform
Figure 6. Switching time waveform
6/10
STP1N120
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
STP1N120
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
A
b
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/10
STP1N120
Revision history
5
Revision history
Table 9.
Date
14-Sep-2006
Revision history
Revision
Changes
1
First release
9/10
STP1N120
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10/10
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