STP22NF03L_07 [STMICROELECTRONICS]
N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET; N沟道30V - 0.0038ヘ - 22A - TO- 220 STripFET⑩ II功率MOSFET
| 型号： | STP22NF03L_07 |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET |
| 文件： | 总12页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP22NF03L
N-channel 30V - 0.0038Ω - 22A - TO-220
STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STP22NF03L
30V
<0.05Ω
22A
■ Exceptional dv/dt capability
■ Low gate charge at 100°C
3
■ Application oriented characterization
■ 100% avalanche tested
2
1
TO-220
Application
■ Switching applications
Description
Figure 1.
Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
Order code
STP22NF03L
Device summary
Marking
Package
TO-220
Packaging
P22NF03L@
Tube
September 2007
Rev 4
1/12
www.st.com
12
Contents
STP22NF03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP22NF03L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDGR
VGS
ID
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage
30
30
V
V
15
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
22
16
88
45
0.3
6
A
(1)
ID
A
(1)
IDM
A
Ptot
Total dissipation at TC = 25°C
Derating factor
W
W/°C
V/ns
mJ
dv/dt(2) Peak diode recovery voltage slope
(3)
EAS
Single pulse avalanche energy
Storage temperature
200
Tstg
Tj
-55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤22A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 11A, VDD = 15V
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
3.33
62.5
300
°C/W
°C/W
°C
TJ
Maximum lead temperature for soldering purpose
3/12
Electrical characteristics
STP22NF03L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V(BR)DSS
ID = 250µA, VGS =0
30
V
breakdown voltage
V
DS = max ratings
Zero gate voltage
1
µA
µA
IDSS
VDS = max ratings,
TC = 125°C
drain current (VGS = 0)
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20V
100
nA
V
VGS(th)
RDS(on)
Gate threshold voltage
VDS = VGS, ID = 250µA
1
VGS = 10V, ID = 11A
VGS = 5V, ID = 11A
0.038
0.045
0.05
0.06
Ω
Ω
Static drain-source on
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS= 15V , ID = 11A
7
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
330
90
pF
pF
pF
VDS = 25V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
40
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
13
4
ns
ns
ns
ns
VDD = 15V, ID = 11A
RG = 4.7Ω VGS = 5V
(see Figure 13)
Turn-off delay time
Fall time
12
5
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 24V, ID = 22A,
VGS = 5V
6.5
3.6
2
9
nC
nC
nC
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/12
STP22NF03L
Electrical characteristics
Table 6.
Source drain diode
Parameter
Symbol
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
ISD
22
88
A
A
Source-drain current
(pulsed)
(1)
ISDM
(2)
VSD
Forward on voltage
ISD = 22A, VGS = 0
1.5
V
ISD = 22A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
30
18
ns
nC
A
di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see Figure 15)
Qrr
IRRM
1.2
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STP22NF03L
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Transconductance
Figure 7. Static drain-source on resistance
6/12
STP22NF03L
Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature
temperature
Figure 12. Source-drain diode forward
characteristics
7/12
Test circuit
STP22NF03L
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/12
STP22NF03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP22NF03L
TO-220 mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
10/12
STP22NF03L
Revision history
5
Revision history
Table 7.
Date
Document revision history
Revision
Changes
09-Sep-2004
09-Aug-2006
20-Feb-2007
03-Sep-2007
1
2
3
4
Datasheet according to PCN DSG-TRA/04/532
New template, no content change
Typo mistake on page 1
Figure 2: Safe operating area has been update
11/12
STP22NF03L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
相关型号：
STP22NM60
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET
STMICROELECTR
STP22NM60FP
22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN
STMICROELECTR
STP22NS25Z
N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY⑩ MOSFET
STMICROELECTR
STP23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh⢠II Power MOSFET
STMICROELECTR
STP23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STMICROELECTR
STP23NM60ND
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明