STP22NM50 [STMICROELECTRONICS]
N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET; N沟道500V - 0.16ohm - 20A TO- 220 / FP / D2PAK / I2PAK MDmesh⑩Power MOSFET
| 型号： | STP22NM50 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| 文件： | 总10页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
2
2
N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D PAK/I PAK
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
V
R
R
*Q
ds(on)
I
D
DSS
DS(on)
g
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V <0.215Ω 6.4 Ω*nC
500 V <0.215Ω 6.4 Ω*nC
500 V <0.215Ω 6.4 Ω*nC
500 V <0.215Ω 6.4 Ω*nC
20 A
20 A
20 A
20 A
3
1
3
2
2
D PAK
1
■
■
■
■
■
TYPICAL R (on) = 0.16Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TO-220
TO-220FP
3
2
1
I²PAK
(Tabless TO-220)
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
I
NTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)22NM50(-1) STP22NM50FP
V
Drain-source Voltage (V = 0)
500
500
±30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
20
12.6
80
20(*)
12.6(*)
80(*)
45
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
(●)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
192
1.2
W
TOT
C
Derating Factor
0.36
W/°C
V/ns
V
dv/dt(1)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
15
V
ISO
--
2000
T
stg
–65 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤20A, di/dt ≤400A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
(*)Limited only by maximum temperature allowed
January 2003
1/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
THERMAL DATA
2
TO-220/I PAK/
TO-220FP
2
D PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
0.65
2.8
°C/W
°C/W
°C
62.5
300
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
10
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
650
mJ
AS
(starting T = 25 °C, I = 5 A, V = 50 V)
j
D
DD
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
500
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
V
V
= V , I = 250µA
Gate Threshold Voltage
3
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 10A
0.16
0.215
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
10
S
fs
DS
D(on)
I
= 10A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1480
285
34
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
C
(2) Equivalent Output
Capacitance
V
= 0V, V = 0V to 400V
130
1.6
pF
oss eq.
GS
DS
R
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
Ω
g
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
2/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250 V, I = 10 A
Turn-on Delay Time
24
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
16
ns
r
(see test circuit, Figure 3)
Q
V
V
= 400 V, I = 20 A,
= 10 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
40
13
19
56
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
9
Max.
Unit
ns
t
V
R
= 400 V, I = 20 A,
r(Voff)
DD
D
= 4.7Ω, V = 10 V
GS
(see test circuit, Figure 5)
G
t
8.5
23
ns
f
t
Cross-over Time
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
A
I
SD
Source-drain Current
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
80
A
SDM
V
I
I
= 20 A, V = 0
1.5
V
SD
SD
SD
GS
t
= 20 A, di/dt = 100A/µs,
= 100 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
350
4.6
26
ns
µC
A
rr
Q
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
= 20 A, di/dt = 100A/µs,
= 100 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
435
5.9
27
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
6/10
1
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
7/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
8/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6
0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
K0
P0
P1
P2
R
5.0
4.1
0.189 0.197
0.153 0.161
12.1 0.468 0.476
2.1
0.075 0.082
1.574
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
9/10
STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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10/10
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