STP7NC80Z [STMICROELECTRONICS]
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET; N沟道800V - 1.3ohm - 6.5A TO- 220 / FP / D2PAK / I2PAK齐纳保护PowerMESH⑩III MOSFET
| 型号： | STP7NC80Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| 文件： | 总13页 (文件大小：543K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
800 V
800 V
800 V
800 V
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
6.5 A
6.5 A
6.5 A
6.5 A
3
1
3
2
2
D PAK
1
■
■
TYPICAL R (on) = 1.3Ω
DS
TO-220
TO-220FP
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
■
■
■
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
3
2
1
2
I PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
■
ORDERING INFORMATION
SALES TYPE
MARKING
P7NC80Z
P7NC80ZFP
B7NC80Z
B7NC80Z
PACKAGE
TO-220
PACKAGING
TUBE
STP7NC80Z
STP7NC80ZFP
STB7NC80ZT4
STB7NC80Z-1
TO-220FP
TUBE
2
TAPE & REEL
D PAK
2
TUBE
I PAK
May 2003
1/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
V
Drain-source Voltage (V = 0)
800
800
±25
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
6.5
4
6.5 (*)
4(*)
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
26
26 (*)
40
A
DM
P
Total Dissipation at T = 25°C
135
1.08
W
TOT
C
Derating Factor
0.32
W/°C
mA
KV
V/ns
V
I
Gate-source Current
±50
3
GS
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
ESD(G-S)
dv/dt
3
V
--
2000
ISO
T
-65 to 150
150
°C
°C
stg
T
Max.Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
THERMAL DATA
2
TO-220 / D PAK /
TO-220FP
2
I PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.93
3.13
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
30
T
300
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
6.5
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
290
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
GSO
-4
1.3
90
αT
Rz
Voltage Thermal Coefficient
Dynamic Resistance
T=25°C Note(3)
10 /°C
I
= 20 mA,
Ω
D
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
I
800
V
(BR)DSS
D
D
GS
∆BV
/∆T Breakdown Voltage Temp.
= 1 mA, V = 0
0.9
V/°C
DSS
J
GS
Coefficient
I
Zero Gate Voltage
V
V
= Max Rating
DS
1
50
µA
µA
DSS
GSS
Drain Current (V = 0)
= Max Rating, T = 125 °C
GS
DS
C
I
Gate-body Leakage
V
= ± 20V
±10
µA
GS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
3
4
5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3.3 A
1.3
1.5
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
6
S
fs
DS
D(on)
I
= 3.3 A
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
2350
164
17
pF
pF
pF
iss
DS
GS
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 400 V, I = 3 A
= 4.7Ω V = 10 V
GS
33
12
ns
ns
d(on)
DD
D
t
r
G
( see test circuit, Figure 3)
Q
Q
Q
V
V
= 640 V, I = 6 A,
= 10V
58
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
43
12
15
nC
nC
nC
g
DD
GS
D
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 640 V, I =6 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
13
13
20
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
6.5
26
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
=6.1 A, V = 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
= 6 A, di/dt = 100A/µs
= 40V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
680
6
18
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V =αT(25°-T) BV
(25°)
GSO
BV
3/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Safe Operating Area For TO-220/I2PAK
Safe Operating Area For TO-220FP
Output Characteristics
Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
Transfer Characteristics
4/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Source-drain Diode Forward Characteristics
6/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
10/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
11/13
1
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
13/13
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