STP8NS25 [STMICROELECTRONICS]
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET; N沟道250V - 0.38ohm - 8A TO- 220 / TO- 220FP MESH OVERLAY⑩ MOSFET
| 型号： | STP8NS25 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET |
| 文件： | 总9页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP8NS25
STP8NS25FP
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP8NS25
STP8NS25FP
250 V
250 V
< 0.45 Ω
< 0.45 Ω
8 A
8 A
■
■
■
TYPICAL R (on) = 0.38 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
3
3
2
2
1
1
DESCRIPTION
TO-220
TO-220FP
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP8NS25
STP8NS25FP
V
Drain-source Voltage (V = 0)
250
250
± 20
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuos) at T = 25°C
8
5
8(*)
5(*)
32(*)
30
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
●
Drain Current (pulsed)
32
80
0.64
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.24
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
5
V
-
2000
ISO
T
stg
–65 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
(1) I ≤ 8A, di/dt≤300 A/µs, V ≤ V
(*)Limited only by maximum temperature allowed
, Tj≤T
jMAX
SD
DD
(BR)DSS
(•)Pulse width limited by safe operating area
April 2001
1/9
STP8NS25/STP8NS25FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
1.56
4.11
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
62.5
0.5
T
Maximum Lead Temperature For Soldering Purpose
300
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
250
V
(BR)DSS
GS
Breakdown Voltage
I
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Zero Gate Voltage
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 4 A
D
0.38
0.45
Ω
DS(on)
GS
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
8
A
D(on)
DS
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
7
8
S
D(on)
I
D
= 4A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
770
118
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
48
pF
2/9
STP8NS25/STP8NS25FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 125 V, I = 4 A
Turn-on Delay Time
13
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
18
ns
r
(see test circuit, Figure 3)
Q
V
V
= 200V, I = 8 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
37
5.2
51.8
nC
nC
nC
g
DD
D
GS
Q
gs
Q
14.8
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off- Delay Time
Fall Time
V
= 125V, I = 4 A,
51
16
ns
ns
d(Voff)
DD
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 3)
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
= 200V, I = 8 A,
12.5
12.5
28
ns
ns
ns
r(Voff)
clamp
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 5)
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
8
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
32
A
SDM
V
I
I
= 8 A, V = 0
1.7
V
SD
SD
GS
t
rr
= 8 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
198
1.1
ns
µC
A
SD
V
= 30V, T = 150°C
j
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
11.3
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP8NS25/STP8NS25FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP8NS25/STP8NS25FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP8NS25/STP8NS25FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP8NS25/STP8NS25FP
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP8NS25/STP8NS25FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP8NS25/STP8NS25FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
9/9
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