STPS10L60CG-TR [STMICROELECTRONICS]

Power Schottky Rectifier;
STPS10L60CG-TR
型号: STPS10L60CG-TR
厂家: ST    ST
描述:

Power Schottky Rectifier

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®
STPS10L60CF/CFP  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
IF(AV)  
VRRM  
2 x 5 A  
60 V  
K
A2  
Tj (max)  
VF (max)  
150 °C  
0.52 V  
FEATURES AND BENEFITS  
LOW FORWARD VOLTAGE DROP  
NEGLIGIBLE SWITCHING LOSSES  
INSULATED PACKAGE:  
Insulating voltage = 2000V DC  
Capacitance = 12pF  
A2  
A2  
K
A1  
K
A1  
TO-220FPAB  
ISOWATT220AB  
STPS10L60CF  
STPS10L60CFP  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tap Schottky rectifiers suited for  
Switched Mode Power Supplies and high  
frequency DC to DC converters.  
Packaged in ISOWATT220AB, TO-220FPAB this  
device is intended for use in high frequency  
inverters.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
60  
V
A
A
IF(RMS)  
IF(AV)  
30  
RMS forward current  
5
10  
Average  
forward current  
ISOWATT220AB Tc =130°C  
TO220FPAB δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
PARM  
Tstg  
180  
1
A
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 2 µs square F = 1kHz  
tp = 1µs Tj = 25°C  
4000  
W
- 65 to + 175  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 3C  
1/5  
STPS10L60CF/CFP  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c)  
Rth (c)  
When the diodes 1 and 2 are used simultaneously :  
Per Diode  
Total  
4.5  
3.5  
°C/W  
Junction to case ISOWATT220AB TO-220FPAB  
Coupling  
2.5  
°C/W  
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests conditions  
Min. Typ. Max.  
Unit  
IR *  
220  
µA  
Reverse leakage current  
Tj = 25°C  
VR = VRRM  
45  
60  
mA  
V
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
VF *  
0.55  
0.52  
0.67  
0.64  
Forward voltage drop  
IF = 5 A  
IF = 5 A  
IF = 10 A  
IF = 10 A  
0.43  
0.55  
Pulse test : * tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation :  
2
P = 0.4x IF(AV) + 0.024 IF (RMS)  
Fig. 1: Average forward power dissipation versus  
average forward current (per diode).  
Fig. 2: Average current versus ambient  
temperature (δ=0.5) (per diode).  
IF(av)(A)  
PF(av)(W)  
δ = 0.1  
δ = 0.2  
δ = 0.5  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
Rth(j-a)=Rth(j-c)  
δ = 0.05  
5
δ = 1  
4
Rth(j-a)=15°C/W  
3
2
T
T
1
tp  
=tp/T  
δ
tp  
=tp/T  
Tamb(°C)  
δ
IF(av) (A)  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5  
0
25  
50  
75  
100  
125  
150  
2/5  
STPS10L60CF/CFP  
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
Fig. 5: Non repetitive surge peak forward current  
versus overload duration (maximum values, per  
diode) (ISOWATT220AB, TO-220FPAB).  
Fig. 6: Relative variation of thermal transient  
impedance junction to case versus pulse duration.  
(ISOWATT220AB, TO-220FPAB).  
Zth(j-c)/Rth(j-c)  
IM(A)  
1.0  
90  
80  
70  
60  
0.8  
0.6  
δ = 0.5  
Tc=25°C  
50  
40  
0.4  
30  
Tc=75°C  
δ = 0.2  
T
20  
IM  
0.2  
Tc=125°C  
δ = 0.1  
t
10  
tp  
=tp/T  
δ
tp(s)  
t(s)  
δ=0.5  
Single pulse  
0
0.0  
1E-3  
1E-3  
1E-2  
1E-1  
1E+0  
1E-2  
1E-1  
1E+0  
1E+1  
Fig. 8: Junction capacitance versus reverse  
voltage applied (typical values, per diode).  
Fig. 7: Reverse leakage current versus reverse  
voltage applied (typical values, per diode).  
C(pF)  
IR(mA)  
3E+2  
1000  
Tc=150°C  
F=1MHz  
Tj=25°C  
1E+2  
Tc=125°C  
1E+1  
500  
200  
Tc=100°C  
1E+0  
Tc=75°C  
Tc=50°C  
1E-1  
Tc=25°C  
1E-2  
VR(V)  
VR(V)  
100  
1E-3  
1
10  
100  
3/5  
0
5
10 15 20 25 30 35 40 45 50 55 60  
STPS10L60CF/CFP  
Fig. 9: Forward voltage drop versus forward  
current (maximum values, per diode).  
IFM(A)  
100.0  
Tj=150°C  
(typical values)  
Tj=25°C  
10.0  
1.0  
Tj=125°C  
VFM(V)  
0.1  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
PACKAGE MECHANICAL DATA  
ISOWATT220AB  
DIMENSIONS  
Millimeters Inches  
Min. Max.  
REF.  
Min.  
Max.  
A
B
D
E
F
F1  
F2  
G
G1  
H
L2  
L3  
L4  
L6  
L7  
Diam  
4.40  
2.50  
2.50  
0.40  
0.75  
1.15  
1.15  
4.95  
2.40  
4.60  
2.70  
2.75  
0.70  
1.00  
1.70  
1.70  
5.20  
2.70  
0.173 0.181  
0.098 0.106  
0.098 0.108  
0.016 0.028  
0.030 0.039  
0.045 0.067  
0.045 0.067  
0.195 0.205  
0.094 0.106  
10.00 10.40 0.394 0.409  
16.00 Typ. 0.630 Typ.  
28.60 30.60 1.125 1.205  
9.80 10.60 0.386 0.417  
15.90 16.40 0.626 0.646  
9.00  
3.00  
9.30  
3.20  
0.354 0.366  
0.118 0.126  
Cooling method: C  
Recommended torque value: 0.55 m.N  
Maximum torque value: 0.70 m.N  
4/5  
STPS10L60CF/CFP  
PACKAGE MECHANICAL DATA  
TO-220FPAB  
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min.  
4.4 4.6  
Max.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.205  
0.106  
0.409  
A
A
B
0.173  
0.098  
0.098  
0.018  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
B
H
2.5  
2.5  
2.7  
2.75  
0.70  
1
D
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
Dia  
F
F1  
F2  
G
1.70  
1.70  
5.20  
2.7  
L6  
L2  
L3  
L7  
G1  
H
L5  
10  
10.4  
D
L2  
L3  
L4  
L5  
L6  
L7  
Dia.  
16 Typ.  
0.63 Typ.  
F1  
L4  
28.6  
9.8  
30.6  
10.6  
3.6  
1.126  
0.386  
0.114  
0.626  
0.354  
0.118  
1.205  
0.417  
0.142  
0.646  
0.366  
0.126  
F2  
2.9  
F
E
15.9  
9.00  
3.00  
16.4  
9.30  
3.20  
G1  
G
Ordering type  
Marking  
Package  
Weight Base qty Delivery mode  
STPS10L60CF  
STPS10L60CF  
STPS10L60CF  
STPS10L60CF  
STPS10L60CFP  
ISOWATT220AB  
ISOWATT220AB  
TO-220FPAB  
2.08g  
2.08g  
2 g  
50  
1000  
50  
Tube  
Bulk  
STPS10L60CFP  
Epoxy meets UL94,V0  
Tube  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
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Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
5/5  

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