STPS10L60CG-TR [STMICROELECTRONICS]
Power Schottky Rectifier;型号: | STPS10L60CG-TR |
厂家: | ST |
描述: | Power Schottky Rectifier |
文件: | 总5页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
STPS10L60CF/CFP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV)
VRRM
2 x 5 A
60 V
K
A2
Tj (max)
VF (max)
150 °C
0.52 V
FEATURES AND BENEFITS
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■
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LOW FORWARD VOLTAGE DROP
NEGLIGIBLE SWITCHING LOSSES
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
A2
A2
K
A1
K
A1
TO-220FPAB
ISOWATT220AB
STPS10L60CF
STPS10L60CFP
■
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in ISOWATT220AB, TO-220FPAB this
device is intended for use in high frequency
inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
Unit
VRRM
60
V
A
A
IF(RMS)
IF(AV)
30
RMS forward current
5
10
Average
forward current
ISOWATT220AB Tc =130°C
TO220FPAB δ = 0.5
Per diode
Per device
IFSM
IRRM
PARM
Tstg
180
1
A
A
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
4000
W
- 65 to + 175
150
°C
°C
V/µs
Tj
Maximum operating junction temperature *
Critical rate of rise reverse voltage
dV/dt
10000
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
July 2003 - Ed: 3C
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STPS10L60CF/CFP
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth (j-c)
Rth (c)
When the diodes 1 and 2 are used simultaneously :
Per Diode
Total
4.5
3.5
°C/W
Junction to case ISOWATT220AB TO-220FPAB
Coupling
2.5
°C/W
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR *
220
µA
Reverse leakage current
Tj = 25°C
VR = VRRM
45
60
mA
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VF *
0.55
0.52
0.67
0.64
Forward voltage drop
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
0.43
0.55
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.4x IF(AV) + 0.024 IF (RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
PF(av)(W)
δ = 0.1
δ = 0.2
δ = 0.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
Rth(j-a)=Rth(j-c)
δ = 0.05
5
δ = 1
4
Rth(j-a)=15°C/W
3
2
T
T
1
tp
=tp/T
δ
tp
=tp/T
Tamb(°C)
δ
IF(av) (A)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0
25
50
75
100
125
150
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STPS10L60CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
90
80
70
60
0.8
0.6
δ = 0.5
Tc=25°C
50
40
0.4
30
Tc=75°C
δ = 0.2
T
20
IM
0.2
Tc=125°C
δ = 0.1
t
10
tp
=tp/T
δ
tp(s)
t(s)
δ=0.5
Single pulse
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(mA)
3E+2
1000
Tc=150°C
F=1MHz
Tj=25°C
1E+2
Tc=125°C
1E+1
500
200
Tc=100°C
1E+0
Tc=75°C
Tc=50°C
1E-1
Tc=25°C
1E-2
VR(V)
VR(V)
100
1E-3
1
10
100
3/5
0
5
10 15 20 25 30 35 40 45 50 55 60
STPS10L60CF/CFP
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=150°C
(typical values)
Tj=25°C
10.0
1.0
Tj=125°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
Millimeters Inches
Min. Max.
REF.
Min.
Max.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
0.173 0.181
0.098 0.106
0.098 0.108
0.016 0.028
0.030 0.039
0.045 0.067
0.045 0.067
0.195 0.205
0.094 0.106
10.00 10.40 0.394 0.409
16.00 Typ. 0.630 Typ.
28.60 30.60 1.125 1.205
9.80 10.60 0.386 0.417
15.90 16.40 0.626 0.646
9.00
3.00
9.30
3.20
0.354 0.366
0.118 0.126
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Cooling method: C
Recommended torque value: 0.55 m.N
Maximum torque value: 0.70 m.N
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STPS10L60CF/CFP
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min.
4.4 4.6
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
A
A
B
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
B
H
2.5
2.5
2.7
2.75
0.70
1
D
E
0.45
0.75
1.15
1.15
4.95
2.4
Dia
F
F1
F2
G
1.70
1.70
5.20
2.7
L6
L2
L3
L7
G1
H
L5
10
10.4
D
L2
L3
L4
L5
L6
L7
Dia.
16 Typ.
0.63 Typ.
F1
L4
28.6
9.8
30.6
10.6
3.6
1.126
0.386
0.114
0.626
0.354
0.118
1.205
0.417
0.142
0.646
0.366
0.126
F2
2.9
F
E
15.9
9.00
3.00
16.4
9.30
3.20
G1
G
Ordering type
Marking
Package
Weight Base qty Delivery mode
STPS10L60CF
STPS10L60CF
STPS10L60CF
STPS10L60CF
STPS10L60CFP
ISOWATT220AB
ISOWATT220AB
TO-220FPAB
2.08g
2.08g
2 g
50
1000
50
Tube
Bulk
STPS10L60CFP
Epoxy meets UL94,V0
Tube
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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