STPS10M80CT [STMICROELECTRONICS]
Power Schottky rectifier; 功率肖特基整流器型号: | STPS10M80CT |
厂家: | ST |
描述: | Power Schottky rectifier |
文件: | 总11页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS10M80C
Power Schottky rectifier
Features
A1
K
■ High junction temperature capability
A2
■ Optimized trade-off between leakage current
K
K
and forward voltage drop
■ Low leakage current
A2
■ Avalanche capability specified
A2
K
■ Insulated package TO-220FPAB
– insulated voltage: 2000 V
A1
D2PAK
STPS10M80CG-TR
A1
I2PAK
– package capacitance: 45 pF
STPS10M80CR
K
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
A1
K
A2
K
A2
2
2
A1
Packaged in TO-220AB, I PAK, D PAK and TO-
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
TO-220AB
TO-220FPAB
STPS10M80CFP
STPS10M80CT
(a)
Figure 1.
Electrical characteristics
Table 1.
Device summary
Symbol
IF(AV)
VRRM
I
V
I
Value
"Forward"
2 x 5 A
80 V
2 x I
O
X
I
F
Tj (max)
VF (typ)
175 °C
465 mV
I
O
X
V
AR
RRM
V
R
V
V
I
R
V
V
V
V
F F(2xI
F(I
)
)
o
To
o
"Reverse"
I
AR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
April 2011
Doc ID 018734 Rev 1
1/11
www.st.com
11
Characteristics
STPS10M80C
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode, at T = 25 °C unless
amb
otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
80
30
V
A
IF(RMS) Forward rms current
TO-220AB,
Tc = 160 °C Per diode
5
I2PAK, D2PAK Tc = 160 °C Per device
10
Average forward current,
δ = 0.5
IF(AV)
A
Tc = 150 °C Per diode
TO-220FPAB
5
Tc = 140 °C Per device
10
Surge non repetitive
IFSM
tp = 10 ms sinusoidal
Tc = 25 °C
150
4000
100
A
W
V
forward current
(1)
PARM
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs
Maximum repetitive peak
avalanche voltage
(2)
VARM
tp < 1 µs, Tj < 150 °C, IAR < 12 A
tp < 1 µs, Tj < 150 °C, IAR < 12 A
Maximum single pulse
peak avalanche voltage
(2)
VASM
100
V
Tstg
Tj
Storage temperature range
-65 to +175
175
°C
°C
Maximum operating junction temperature(3)
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 13
1
dPtot
dTj
<
3.
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
Table 3.
Symbol
Thermal parameters
Parameter
TO-220AB
Value
Unit
per diode
total
3.10
1.88
5.90
4.75
I2PAK, D2PAK
Rth(j-c) Junction to case
°C/W
per diode
total
TO-220FPAB
TO-220AB
0.65
3.60
I2PAK, D2PAK
Rth(c) Coupling
°C/W
TO-220FPAB
When the two diodes 1 and 2 are used simultaneously:
ΔT (diode 1) = P(diode 1) x R
(Per diode) + P(diode 2) x R
th(c)
j
th(j-c)
2/11
Doc ID 018734 Rev 1
STPS10M80C
Characteristics
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Tj = 25 °C
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
-
-
4
20
µA
(1)
IR
Reverse leakage current
VR = VRRM
IF = 2.5 A
IF = 5 A
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
3.5
15
mA
0.540
0.465
0.640
0.550
0.775
0.635
0.580
0.495
0.705
0.590
0.850
0.705
(2)
VF
Forward voltage drop
V
IF = 10 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
2
P = 0.475 x I
+ 0.023 x I
F(AV)
F (RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
5
IF(AV)(A)
6
δ = 1
R
= R
th(j-a) th(j-c)
δ = 0.5
δ = 0.05
δ = 0.2
δ = 0.1
5
4
3
2
1
0
4
3
2
1
0
TO-220AB / I2PAK / D2PAK
TO-220FPAB
T
δ = tp / T
IF(AV)(A)
tp
Tamb(°C)
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(t )
p
PARM(25 °C)
PARM(1µs)
1.2
1
1
0.8
0.6
0.4
0.2
0.1
0.01
Tj(°C)
tp(µs)
1000
0.001
0
25
0.01
0.1
1
10
100
150
50
75
100
125
Doc ID 018734 Rev 1
3/11
Characteristics
STPS10M80C
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration
(maximum values, per diode)
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
100
IM(A)
70
60
50
40
30
20
10
0
TO-220AB / I2PAK / D2PAK
TO-220FPAB
90
80
70
60
50
40
30
Tc = 25 °C
Tc = 75 °C
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
Tc = 125 °C
IM
20
10
0
IM
t
t
δ = 0.5
δ = 0.5
t(s)
1.E+00
t(s)
1.E+00
1.E-03
1.E-02
1.E-01
1.E-03
1.E-02
1.E-01
Figure 8.
Relative thermal impedance
junction to case versus pulse
duration
Figure 9.
Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
TO-220AB / I2PAK / D2PAK
TO-220FPAB
Single pulse
Single pulse
tp(s)
1.E+01
tp(s)
1.E+00
1.E-04
1.E-03
1.E-02
1.E-01
1.E-03
1.E-02
1.E-01
1.E+00
Figure 10. Reverse leakage current versus
reverse voltage applied
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
(typical values, per diode)
C(pF)
1000
IR(µA)
1.E+05
F = 1 MHz
Vosc = 30 mVRMS
Tj = 150 °C
1.E+04
Tj = 25 °C
Tj = 125 °C
1.E+03
Tj = 100 °C
100
1.E+02
1.E+01
1.E+00
1.E-01
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
VR(V)
70 80
VR(V)
10
0
10
20
30
40
50
60
1
10
100
4/11
Doc ID 018734 Rev 1
STPS10M80C
Characteristics
Figure 12. Forward voltage drop versus
forward current (per diode)
Figure 13. Reverse safe operating area
(t < 1 µs and T < 150 °C)
p
j
IFM(A)
Iarm (A)
10
12.0
11.5
11.0
10.5
10.0
9.5
Iarm (Varm) 150 °C, 1 µs
Tj = 125 °C
(Maximum values)
9
8
7
6
5
4
3
2
1
0
Tj = 125 °C
(Typical values)
Tj = 25 °C
(Maximum values)
9.0
8.5
VFM(V)
0.8 0.9
Varm (V)
8.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
100 105 110 115 120 125 130 135 140 145 150
2
Figure 14. Thermal resistance junction to ambient versus copper surface under tab for D PAK
Rth(j-a)(°C/W)
80
epoxy printed board copper thickness = 35 µm
70
D2PAK
60
50
40
30
20
10
SCu(cm2)
35 40
0
0
5
10
15
20
25
30
Doc ID 018734 Rev 1
5/11
Package information
STPS10M80C
2
Package information
●
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 5.
TO-220AB dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
A
H2
D
Dia
C
E
L5
F
L7
F1
F2
G
L6
L4
L2
F2
F1
D
L9
G1
H2
L2
L4
L5
L6
L7
L9
M
16.4 Typ.
0.645 Typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
G1
E
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G
2.6 Typ.
0.102 Typ.
Dia.
3.75
3.85
0.147
0.151
6/11
Doc ID 018734 Rev 1
STPS10M80C
Table 6.
Package information
Dimensions
TO-220FPAB dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
B
4.4
2.5
4.9
2.9
2.75
0.7
1
0.173
0.098
0.096
0.016
0.024
0.045
0.045
0.195
0.094
0.394
0.192
0.114
0.108
0.028
0.039
0.067
0.067
0.205
0.106
0.421
A
B
H
D
2.45
0.4
E
Dia.
F
0.6
L6
F1
F2
G
1.15
1.15
4.95
2.4
1.7
1.7
5.2
2.7
10.7
L2
L7
L3
G1
H
F1
F2
L4
10
D
L2
L3
L4
L6
L7
Dia.
16 Typ.
0.630 Typ.
F
E
28.6
9.8
15.8
9
30.6
10.7
16.4
9.9
1.126
0.386
0.622
0.354
0.114
1.205
0.421
0.646
0.390
0.138
G1
G
2.9
3.5
Doc ID 018734 Rev 1
7/11
Package information
Table 7.
STPS10M80C
2
D PAK dimensions
Dimensions
Millimeters
Ref.
Inches
Min.
Max.
Min.
Max.
A
A1
A2
B
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
A
E
C2
L2
D
B2
C
L
L3
A1
C2
D
B2
B
R
C
E
G
G
A2
L
M
L2
L3
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
R
0.40 typ.
0.016 typ.
V2
0°
8°
0°
8°
2
Figure 15. D PAK footprint (dimensions in mm)
16.90
10.30
5.08
1.30
3.70
8.90
8/11
Doc ID 018734 Rev 1
STPS10M80C
Package information
Dimensions
2
Table 8.
I PAK dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.195
0.394
0.512
0.138
0.050
0.181
0.107
0.035
0.067
0.028
0.052
0.368
0.106
0.203
0.409
0.551
0.155
0.055
E
c2
L2
b1
c
D
c2
D
L1
A1
b1
b
L
e
e1
E
c
e
e1
L
13
L1
L2
3.50
1.27
3.93
1.40
Doc ID 018734 Rev 1
9/11
Ordering information
STPS10M80C
3
Ordering information
Table 9.
Ordering information
Order code
Marking
Package
Weight Base qty Delivery mode
STPS10M80CT
STPS10M80CFP
STPS10M80CR
STPS10M80CG-TR
STPS10M80CT
STPS10M80CFP
STPS10M80CR
STPS10M80CG
TO-220AB
TO-220FPAB
I2PAK
1.9 g
2.0 g
50
50
Tube
Tube
1.49 g
1.48 g
50
Tube
D2PAK
1000
Tape and reel
4
Revision history
Table 10. Revision history
Date
Revision
Changes
14-Apr-2011
1
First issue.
10/11
Doc ID 018734 Rev 1
STPS10M80C
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