STPS1L30 [STMICROELECTRONICS]
LOW DROP POWER SCHOTTKY RECTIFIER; 电力低压降肖特基整流器
| 型号： | STPS1L30 |
| 厂家： | 
ST |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS1L30
®
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
VRRM
1 A
30 V
Tj (max)
VF(max)
150°C
0.3 V
FEATURES AND BENEFITS
SMA
SMB
■
Very low forward voltage drop for less power
dissipation
(JEDEC DO-214AC)
STPS1L30A
(JEDEC DO-214AA)
STPS1L30U
■
Optimized conduction/reverse losses trade-off
which means the highest yield in the
applications
■
■
Surface mount miniature packages
Avalanche capability specified
Table 2: Order Codes
Part Number
DESCRIPTION
Marking
GB3
G23
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
STPS1L30A
STPS1L30U
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
Table 3: Absolute Ratings (limiting values)
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
Unit
V
30
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
RMS forward voltage
10
A
TL = 135°C δ = 0.5
tp = 10ms sinusoidal
tp = 2µs F = 1kHz square
tp = 100µs square
Average forward current
1
A
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
75
A
1
1
A
A
tp = 1µs Tj = 25°C
1500
W
°C
°C
V/µs
-65 to + 150
150
Tj
Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
10000
dPtot
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink
dTj Rth(j – a)
1
August 2004
REV. 6
1/7
STPS1L30
Table 4: Thermal Resistance
Symbol
Parameter
Value
30
Unit
SMA
SMB
Rth(j-l)
Junction to lead
°C/W
25
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Min.
Typ
6
Max.
Unit
Tj = 25°C
µA
200
15
IR *
VR = VRRM
IF = 1A
Reverse leakage current
Tj = 100°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
mA
0.395
0.3
0.26
VF *
Forward voltage drop
V
0.445
IF = 2A
0.325 0.375
Pulse test:
* tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.225 x I
+ 0.075 I
F(AV)
F (RMS)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
P
(W)
F(AV)
I
(A)
F(AV)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Rth(j-a)=Rth(j-I)
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
δ = 1
T
T
T
(°C)
amb
I
(A)
F(AV)
tp
=tp/T
δ
tp
=tp/T
δ
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0.01
T (°C)
j
t (µs)
p
0
0.001
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
2/7
STPS1L30
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
I (A)
M
I (A)
M
10
8
10
8
Ta=25°C
Ta=50°C
Ta=100°C
Ta=25°C
Ta=50°C
Ta=100°C
6
6
4
4
IM
IM
2
2
t
t
δ=0.5
δ=0.5
t(s)
t(s)
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)
Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMB)
Z
/R
Z
/R
th(j-c) th(j-c)
th(j-c) th(j-c)
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
δ = 0.5
δ = 0.2
δ = 0.5
δ = 0.2
T
T
δ = 0.1
δ = 0.1
Single pulse
Single pulse
t (s)
p
tp
5E+2
t (s)
p
tp
5E+2
=tp/T
=tp/T
δ
δ
1E-2
1E-1
1E+0
1E+1
1E+2
1E-2
1E-1
1E+0
1E+1
1E+2
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
Figure 10: Junction capacitance versus
reverse voltage applied (typical values)
I (mA)
R
C(pF)
1E+2
500
Tj=150°C
F=1MHz
Tj=25°C
Tj=125°C
1E+1
Tj=100°C
1E+0
100
1E-1
Tj=25°C
1E-2
V (V)
R
V (V)
R
10
1E-3
1
2
5
10
20
30
0
5
10
15
20
25
30
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STPS1L30
Figure 11: Forward voltage drop versus
forward current (typical values, high level)
Figure 12: Forward voltage drop versus
forward current (maximum values, low level)
I
(A)
FM
I
(A)
FM
10.00
1.00
0.10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj=100°C
Tj=125°C
Tj=100°C
Tj=150°C
(typical values)
Tj=150°C
Tj=25°C
Tj=25°C
V
(V)
FM
V
(V)
FM
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 13: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMA)
Figure 14: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMB)
R (°C/W)
th(j-a)
R (°C/W)
th(j-a)
140
120
100
80
120
100
80
60
40
20
0
60
40
20
S(Cu)(cm²)
S(Cu)(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
4/7
STPS1L30
Figure 15: SMA Package Mechanical Data
DIMENSIONS
Millimeters Inches
Min.
REF.
E1
Max.
2.03
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Min.
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
Max.
0.080
0.008
0.065
0.016
0.220
0.181
0.116
0.063
A1
A2
b
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
D
E
c
A1
E
A2
C
E1
D
L
b
L
Figure 16: SMA Foot Print Dimensions
(in millimeters)
1.65
1.45
2.40
1.45
5/7
STPS1L30
Figure 17: SMB Package Mechanical Data
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
E1
Max.
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
D
E
c
A1
E
A2
C
E1
D
L
b
L
Figure 18: SMB Foot Print Dimensions
(in millimeters)
2.3
1.52
2.75
1.52
6/7
STPS1L30
Table 6: Ordering Information
Ordering type
STPS1L30A
STPS1L30U
Marking
GB3
G23
Package
SMA
SMB
Weight
0.068 g
0.107 g
Base qty
5000
2500
Delivery mode
Tape & reel
Tape & reel
■
■
Band indicates cathode
Epoxy meets UL94, V0
Table 7: Revision History
Date
Revision
Description of Changes
Jul-2003
5A
Last update.
SMA package dimensions update. Reference A1 max.
changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
Aug-2004
6
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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