STPS30M100DJF [STMICROELECTRONICS]

Power Schottky rectifier; 功率肖特基整流器
STPS30M100DJF
型号: STPS30M100DJF
厂家: ST    ST
描述:

Power Schottky rectifier
功率肖特基整流器

文件: 总8页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS30M100DJF  
Power Schottky rectifier  
Features  
A
A
Very low conduction losses  
Low forward voltage drop  
Low thermal resistance  
High specified avalanche capability  
High integration  
K
®
ECOPACK 2 compliant component  
K
K
Description  
The STPS30M100DJF is a power Schottky  
rectifier suited for switch mode power supply and  
high frequency DC to DC converters.  
Packaged in PowerFLAT™, this device is  
intended to be used in adaptors requiring good  
efficiency at both low and high load. Its low profile  
was especially designed to be used in  
A
A
PowerFLAT 5x6  
STPS30M100DJF  
applications with space-saving constraints.  
(a)  
Table 1.  
Device summary  
Symbol  
IF(AV)  
VRRM  
Figure 1.  
Electrical characteristics  
Value  
I
V
I
30 A  
100 V  
150 °C  
0.58 V  
"Forward"  
2 x I  
X
O
Tj(max)  
VF(typ)  
I
F
I
O
X
V
RRM  
V
V
R
AR  
V
I
R
V
V
V
V
F F(2xI  
F(I  
)
)
o
To  
o
"Reverse"  
I
AR  
a. VARM and IARM must respect the reverse safe  
operating area defined in Figure 12. VAR and IAR are  
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,  
are static characteristics  
TM: PowerFLAT is a trademark of STMicroelectronics  
May 2011  
Doc ID 16751 Rev 4  
1/8  
www.st.com  
8
Characteristics  
STPS30M100DJF  
1
Characteristics  
Table 2.  
Symbol  
Absolute ratings (limiting values, anode terminals short circuited)  
Parameter  
Value  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) Forward rms current  
IF(AV) Average forward current δ = 0.5  
IFSM Surge non repetitive forward current  
PARM Repetitive peak avalanche power  
100  
45  
V
A
Tc = 90 °C  
30  
A
tp = 10 ms sinusoidal  
tp = 1 µs, Tj = 25 °C  
tp < 1 µs, Tj < 150 °C  
200  
15000  
A
W
Maximum repetitive peak avalanche  
voltage  
(1)  
VARM  
VASM  
120  
120  
V
V
I
AR < 37.5 A  
Maximum single pulse peak avalanche tp < 1 µs, Tj < 150 °C  
(1)  
voltage  
IAR < 37.5 A  
Tstg  
Tj  
Storage temperature range  
-65 to +175  
150  
°C  
°C  
Maximum operating junction temperature (2)  
1. Refer to Figure 12.  
1
dPtot  
dTj  
<
2.  
condition to avoid thermal runaway for a diode on its own heatsink  
Rth(j-a)  
Table 3.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
Rth(j-c) Junction to case  
2.5  
°C/W  
Table 4.  
Symbol  
Static electrical characteristics (anode terminals short circuited)  
Parameter  
Test conditions  
Tj = 25 °C  
Min.  
Typ.  
Max.  
Unit  
-
-
-
-
-
-
-
10  
-
100  
40  
µA  
Reverse leakage  
current  
(1)  
IR  
VR = VRRM  
IF = 15 A  
IF = 30 A  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
mA  
0.82  
0.66  
0.96  
0.73  
0.58  
-
(1)  
VF  
Forward voltage drop  
V
0.66  
1. Pulse test: tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation:  
2
P = 0.65 x I  
+ 0.00267 x I  
F(AV)  
F (RMS)  
2/8  
Doc ID 16751 Rev 4  
 
 
STPS30M100DJF  
Characteristics  
Figure 2.  
Average forward power dissipation Figure 3.  
versus average forward current  
Average forward current versus  
ambient temperature (δ = 0.5)  
IF(AV)(A)  
PF(AV)(W)  
35  
30  
25  
20  
15  
10  
5
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
Rth(j-a) = Rth(j-c)  
δ = 1  
δ = 0.5  
δ = 0.2  
δ = 0.1  
T
δ = 0.05  
δ = tp / T  
tp  
T
δ = tp / T  
tp  
IF(AV)(A)  
Tamb(°C)  
125  
0.0  
0
0
5
10  
15  
20  
25  
30  
35  
0
25  
50  
75  
100  
150  
Figure 4.  
Normalized avalanche power  
derating versus pulse duration  
Figure 5.  
Normalized avalanche power  
derating versus junction  
temperature  
P
(t )  
p
ARM  
P
ARM  
(T )  
j
ARM  
(25 °C)  
P
ARM  
(1 µs)  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
Figure 6.  
Non repetitive surge peak forward Figure 7.  
current versus overload duration  
(maximum values)  
Relative variation of thermal  
impedance junction to case versus  
pulse duration  
IM(A)  
Zth(j-c)/Rth(j-c)  
220  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
200  
180  
160  
140  
120  
100  
80  
Tc = 25 °C  
Tc = 75 °C  
60  
IM  
40  
20  
0
Tc = 125 °C  
Single pulse  
t
tp(s)  
δ = 0.5  
t(s)  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E-05  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
Doc ID 16751 Rev 4  
3/8  
Characteristics  
STPS30M100DJF  
Figure 8.  
Reverse leakage current versus  
Figure 9.  
Junction capacitance versus  
reverse voltage applied  
(typical values)  
reverse voltage applied  
(typical values)  
IR(mA)  
C(pF)  
10000  
1.E+02  
1.E+01  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
F = 1 MHz  
Vosc = 30 mVRMS  
Tj = 150 °C  
Tj = 125 °C  
Tj = 100 °C  
T = 25 °C  
j
1000  
Tj = 75 °C  
Tj = 50 °C  
Tj = 25 °C  
VR(V)  
90 100  
VR(V)  
100  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
Figure 10. Forward voltage drop versus  
forward current  
Figure 11. Thermal resistance junction to  
ambient versus copper surface  
under tab  
IFM(A)  
60  
Rth(j-a)(°C/W)  
250  
Epoxy printed circuit board FR4,  
copper thickness = 35 µm  
55  
50  
Tj = 125 °C  
(Maximum values)  
200  
45  
40  
35  
30  
25  
20  
15  
10  
5
150  
100  
50  
Tj = 125 °C  
(Typical values)  
Tj = 25 °C  
(Maximum values)  
VFM(V)  
Scu(cm²)  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
0
1
2
3
4
5
6
7
8
9
10  
Figure 12. Reverse safe operating area (t < 1 µs and T < 150 °C)  
p
j
Iarm (A)  
50  
Iarm (Varm) 150 °C, 1µs  
45  
40  
Forbidden area  
Operating area  
35  
30  
Varm (V)  
100  
110  
120  
130  
140  
150  
4/8  
Doc ID 16751 Rev 4  
STPS30M100DJF  
Package information  
2
Package information  
Epoxy meets UL94,V0  
Lead-free package  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
Table 5.  
PowerFLAT 5x6 dimensions  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
Max.  
Min.  
Max.  
D2  
A
A1  
A2  
b
0.80  
0.02  
1.00  
0.05  
0.031  
0.001  
0.039  
0.002  
E2  
K
0.25  
5.20  
0.010  
0.205  
b
L
e
0.30  
4.11  
0.50  
4.31  
0.012  
0.162  
0.020  
0.170  
A
D
D
A1  
A2  
D2  
e
1.27  
6.15  
0.050  
0.242  
E
E
E2  
L
3.50  
0.50  
3.70  
0.80  
0.138  
0.020  
0.146  
0.031  
0.062  
K
1.275  
1.575 0.050  
Figure 13. Footprint (dimensions in mm)  
5.35  
4.41  
0.98  
0.95  
0.62  
1.27  
Doc ID 16751 Rev 4  
5/8  
 
Package information  
Figure 14. Tape and reel specifications  
STPS30M100DJF  
Dot identifying Pin A1 location  
Ø 1.55  
2.0  
4.0  
0.30  
0.20  
Ø 1.5  
R 0.50  
6.30  
8.0  
1.20  
All dimensions are typical values in mm  
User direction of unreeling  
6/8  
Doc ID 16751 Rev 4  
 
STPS30M100DJF  
Ordering information  
3
Ordering information  
Table 6.  
Ordering information  
Order code  
Marking  
Package  
Weight Base qty Delivery mode  
STPS30M100DJF-TR  
PS30 M100  
PowerFLAT 5x6  
95 mg  
3000  
Tape and reel  
4
Revision history  
Table 7.  
Date  
Document revision history  
Revision  
Changes  
06-Nov-2009  
30-Jul-2010  
15-Jan-2011  
1
2
3
First issue.  
Replace Power QFN with PowerFLAT.  
Add reference E in Table 5.  
Update all package illustrations. Updated base quantity and  
marking in Table 6. Updated terminal identification in captions of  
Table 2 and Table 4. Added Figure 14.  
20-May-2011  
4
Doc ID 16751 Rev 4  
7/8  
 
STPS30M100DJF  
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8/8  
Doc ID 16751 Rev 4  

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