STPS6035CP [STMICROELECTRONICS]
30A, 35V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3;
| 型号： | STPS6035CP |
| 厂家： | 
ST |
| 描述： | 30A, 35V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3 局域网 二极管 |
| 文件： | 总12页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS60xxCP/CPI
STPS6045CW
POWER SCHOTTKY RECTIFIERS
FEATURES AND BENEFITS
A1
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREME FAST SWITCHING
HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulatingvoltage = 2500VRMS
Capacitance = 12pF
K
A2
A2
K
A1
isolated
TOP3I
(Plastic)
STPS6035CPI
STPS6045CPI
DESCRIPTION
Dual center tap schottky rectifier suited for
switchmode power supply and high frequencyDC
to DC converters.
A2
A2
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
K
K
A1
A1
SOT93
(Plastic)
TO247
(Plastic)
STPS6045CW
STPS6035CP
STPS6045CP
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IF(RMS)
60
A
A
RMS Forward Current
Average Forward Current
δ = 0.5
Per diode
Tc = 125°C Per diode
Tc = 105°C Per device
IF(AV)
SOT93/TO247
TOP3I
30
60
IFSM
IRRM
400
A
A
Surge Non Repetitive Forward Current
Tp = 10 ms Per diode
Sinusoidal
1
Peak RepetitiveReverse Current
Tp = 2 µs
Per diode
F = 1KHz
Tstg
Tj
dV/dt
- 65 to + 150 °C
Storage andJunction Temperature Range
Critical Rate of Rise of Reverse Voltage
- 65 to + 150
1000
V/µs
STPS
6045CP
6045CPI
6045CW
Symbol
Parameter
Unit
6035CP
6035CPI
35
45
V
VRRM
Repetitive Peak Reverse Voltage
January 1997 - Ed: 2
1/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
RTH (j-c)
SOT93/TO247
0.95
0.55
°C/W
Junction-case
Coupling
Per diode total
Per diode total
TOP3I
1.8
1.1
RTH (c)
SOT93/TO247
TOP3I
0.15
0.4
°C/W
When thediodes 1 and 2 are used simultaneously :
∆ TJ(diode 1) = P(diode1) x RTH(Per diode) + P(diode 2) x RTH(c)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS PER DIODE
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR *
500
µA
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
80
mA
V
VF **
0.78
0.63
0.84
Forward voltage drop Tj = 125°C
Tj = 125°C
IF = 60 A
IF = 30 A
IF = 60 A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.48 x IF(AV) + 0.005 IF (RMS)
Fig. 1: Average forward power dissipation
versus average forward current. (Per diode)
PF(av)(W)
30
= 0.2
δ
δ = 0.1
= 0.5
δ
δ = 0.05
25
20
15
10
5
δ = 1
T
tp
=tp/T
δ
IF(av) (A)
0
5
10
15
20
25
30
35
40
0
2/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
Fig. 2: Average current versus ambient
temperature (duty cycle: 0.5) (per diode)
(SOT93 and TO247).
Fig. 3: Average current versus ambient
temperature (duty cycle: 0.5) (per diode)
(TOP3I).
IF(av)(A)
IF(av)(A)
35
35
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
30
25
30
25
20
20
Rth(j-a)=5°C/W
Rth(j-a)=5°C/W
15
15
T
T
10
10
5
5
Tamb(°C)
Tamb(°C)
tp
=tp/T
δ
tp
=tp/T
δ
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Fig. 4: Non repetitive surge peak forward current
versusoverload duration(maximum values)
(per diode) (SOT93 and TO247).
Fig. 5: Non repetitive surge peak forward current
versusoverloadduration(maximum values)
(per diode) (TOP3I).
IM(A)
400
IM(A)
300
350
Tc=105°C
250
300
Tc=75°C
200
250
Tc=50°C
150
200
Tc=75°C
150
100
100
IM
IM
Tc=100°C
50
t
t
50
t(s)
Tc=125°C
t(s)
δ=0.5
δ=0.5
0
0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
K
1
Zth(j-c) (tp. δ)
K =
IR(A)
Rth(j-c)
1.0E-01
Tj=125°C
0.5 δ = 0.5
δ = 0.2
Tj=100°C
1.0E-02
δ = 0.1
1.0E-03
Tj=75°C
0.2
T
Single pulse
VR(V)
1.0E-04
0
5
10
15
20 25
30
35 40
45 50
=tp/T
tp
δ
tp(s)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
3/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
VFM(V)
2.5
C(pF)
5000
Tj=125°C
2.0
F = 1MHz
Tj = 25°C
1.5
1.0
0.5
1000
VR(V)
100
IFM(A)
1
2
5
10
20
50
0.0
1
10
100
500
PACKAGE MECHANICAL DATA
SOT93
DIMENSIONS
REF.
Millimeters
Inches
Min. Max.
H
A
G
Min.
Max.
15.2
16.2
J
A
B
C
D
E
G
H
I
J
L
M
N
P
14.7
0.578 0.596
0.637
I
31 typ
18 typ
12.2
1.220 typ
0.708 typ
B
F
E
0.480
C
3.95
4.7
4
4.15
4.9
4.1
0.155 0.163
0.185 0.193
0.157 0.161
0.062 0.075
0.019 0.030
0.098 typ
P
1.9
0.5
2.1
0.78
L
M
=
=
N
2.5 typ
10.8
1.1
11.1
1.3
0.425 0.437
0.043 0.051
Cooling method : C
Marking : Type number
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
4/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
PACKAGE MECHANICAL DATA
TOP3I (isolated)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
H
I
R
J
A
B
C
D
G
H
I
15.10
20.70
14.35
16.10
3.40
4.40
4.08
1.45
0.50
2.70
5.40
1.20
15.50 0.594
21.10 0.815
15.60 0.565
16.50 0.630
3.65 0.134
4.60 0.173
4.17 0.161
1.55 0.057
0.70 0.020
2.90 0.106
5.65 0.213
1.40 0.047
0.610
0.831
0.614
0.650
0.144
0.181
0.164
0.061
0.028
0.114
0.222
0.056
G
B
D
J
P
C
L
L
M
N
P
R
M
N
N
4.60
0.181
Cooling method : C
Marking : Type number
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
PACKAGE MECHANICAL DATA
TO247
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
V
REF.
Dia.
A
D
E
F
4.70 5.30
2.20 2.60
0.40 0.80
1.00 1.40
0.190 0.210
0.086 0.102
0.015 0.031
0.039 0.055
V
A
H
F1 3.00
F2 2.00
F3
0.118
0.078
2.00 2.40
3.00 3.40
0.078 0.094
0.118 0.133
L5
F4
G
H
L
10.90
0.429
L
15.30 15.90
19.70 20.30
3.70 4.30
0.602 0.625
0.775 0.799
0.145 0.169
L2 L4
L1
L1
F2
F3
F1
L2 18.50
L3 10.50
L4 34.60
L5 5.50
M
V
V2
Dia.
0.728
0.413
1.362
0.216
D
V2
L3
F4
F(x3)
M
E
2.00 3.00
3.55 3.65
0.078 0.118
0.139 0.143
G
5°
60°
5°
60°
=
=
Cooling method : C
Marking : Type number
Weight : 4.4 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as critical components inlife support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
STPS60xxCP/CPI
STPS6045CW
POWER SCHOTTKY RECTIFIERS
FEATURES AND BENEFITS
A1
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREME FAST SWITCHING
HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulatingvoltage = 2500VRMS
Capacitance = 12pF
K
A2
A2
K
A1
isolated
TOP3I
(Plastic)
STPS6035CPI
STPS6045CPI
DESCRIPTION
Dual center tap schottky rectifier suited for
switchmode power supply and high frequencyDC
to DC converters.
A2
A2
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
K
K
A1
A1
SOT93
(Plastic)
TO247
(Plastic)
STPS6045CW
STPS6035CP
STPS6045CP
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IF(RMS)
60
A
A
RMS Forward Current
Average Forward Current
δ = 0.5
Per diode
Tc = 125°C Per diode
Tc = 105°C Per device
IF(AV)
SOT93/TO247
TOP3I
30
60
IFSM
IRRM
400
A
A
Surge Non Repetitive Forward Current
Tp = 10 ms Per diode
Sinusoidal
1
Peak RepetitiveReverse Current
Tp = 2 µs
Per diode
F = 1KHz
Tstg
Tj
dV/dt
- 65 to + 150 °C
Storage andJunction Temperature Range
Critical Rate of Rise of Reverse Voltage
- 65 to + 150
1000
V/µs
STPS
6045CP
6045CPI
6045CW
Symbol
Parameter
Unit
6035CP
6035CPI
35
45
V
VRRM
Repetitive Peak Reverse Voltage
January 1997 - Ed: 2
1/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
RTH (j-c)
SOT93/TO247
0.95
0.55
°C/W
Junction-case
Coupling
Per diode total
Per diode total
TOP3I
1.8
1.1
RTH (c)
SOT93/TO247
TOP3I
0.15
0.4
°C/W
When thediodes 1 and 2 are used simultaneously :
∆ TJ(diode 1) = P(diode1) x RTH(Per diode) + P(diode 2) x RTH(c)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS PER DIODE
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR *
500
µA
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
80
mA
V
VF **
0.78
0.63
0.84
Forward voltage drop Tj = 125°C
Tj = 125°C
IF = 60 A
IF = 30 A
IF = 60 A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.48 x IF(AV) + 0.005 IF (RMS)
Fig. 1: Average forward power dissipation
versus average forward current. (Per diode)
PF(av)(W)
30
= 0.2
δ
δ = 0.1
= 0.5
δ
δ = 0.05
25
20
15
10
5
δ = 1
T
tp
=tp/T
δ
IF(av) (A)
0
5
10
15
20
25
30
35
40
0
2/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
Fig. 2: Average current versus ambient
temperature (duty cycle: 0.5) (per diode)
(SOT93 and TO247).
Fig. 3: Average current versus ambient
temperature (duty cycle: 0.5) (per diode)
(TOP3I).
IF(av)(A)
IF(av)(A)
35
35
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
30
25
30
25
20
20
Rth(j-a)=5°C/W
Rth(j-a)=5°C/W
15
15
T
T
10
10
5
5
Tamb(°C)
Tamb(°C)
tp
=tp/T
δ
tp
=tp/T
δ
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Fig. 4: Non repetitive surge peak forward current
versusoverload duration(maximum values)
(per diode) (SOT93 and TO247).
Fig. 5: Non repetitive surge peak forward current
versusoverloadduration(maximum values)
(per diode) (TOP3I).
IM(A)
400
IM(A)
300
350
Tc=105°C
250
300
Tc=75°C
200
250
Tc=50°C
150
200
Tc=75°C
150
100
100
IM
IM
Tc=100°C
50
t
t
50
t(s)
Tc=125°C
t(s)
δ=0.5
δ=0.5
0
0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
K
1
Zth(j-c) (tp. δ)
K =
IR(A)
Rth(j-c)
1.0E-01
Tj=125°C
0.5 δ = 0.5
δ = 0.2
Tj=100°C
1.0E-02
δ = 0.1
1.0E-03
Tj=75°C
0.2
T
Single pulse
VR(V)
1.0E-04
0
5
10
15
20 25
30
35 40
45 50
=tp/T
tp
δ
tp(s)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
3/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
VFM(V)
2.5
C(pF)
5000
Tj=125°C
2.0
F = 1MHz
Tj = 25°C
1.5
1.0
0.5
1000
VR(V)
100
IFM(A)
1
2
5
10
20
50
0.0
1
10
100
500
PACKAGE MECHANICAL DATA
SOT93
DIMENSIONS
REF.
Millimeters
Inches
Min. Max.
H
A
G
Min.
Max.
15.2
16.2
J
A
B
C
D
E
G
H
I
J
L
M
N
P
14.7
0.578 0.596
0.637
I
31 typ
18 typ
12.2
1.220 typ
0.708 typ
B
F
E
0.480
C
3.95
4.7
4
4.15
4.9
4.1
0.155 0.163
0.185 0.193
0.157 0.161
0.062 0.075
0.019 0.030
0.098 typ
P
1.9
0.5
2.1
0.78
L
M
=
=
N
2.5 typ
10.8
1.1
11.1
1.3
0.425 0.437
0.043 0.051
Cooling method : C
Marking : Type number
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
4/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
PACKAGE MECHANICAL DATA
TOP3I (isolated)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
H
I
R
J
A
B
C
D
G
H
I
15.10
20.70
14.35
16.10
3.40
4.40
4.08
1.45
0.50
2.70
5.40
1.20
15.50 0.594
21.10 0.815
15.60 0.565
16.50 0.630
3.65 0.134
4.60 0.173
4.17 0.161
1.55 0.057
0.70 0.020
2.90 0.106
5.65 0.213
1.40 0.047
0.610
0.831
0.614
0.650
0.144
0.181
0.164
0.061
0.028
0.114
0.222
0.056
G
B
D
J
P
C
L
L
M
N
P
R
M
N
N
4.60
0.181
Cooling method : C
Marking : Type number
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
STPS6035CP/CPI / STPS6045CP/CPI / STPS6045CW
PACKAGE MECHANICAL DATA
TO247
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
V
REF.
Dia.
A
D
E
F
4.70 5.30
2.20 2.60
0.40 0.80
1.00 1.40
0.190 0.210
0.086 0.102
0.015 0.031
0.039 0.055
V
A
H
F1 3.00
F2 2.00
F3
0.118
0.078
2.00 2.40
3.00 3.40
0.078 0.094
0.118 0.133
L5
F4
G
H
L
10.90
0.429
L
15.30 15.90
19.70 20.30
3.70 4.30
0.602 0.625
0.775 0.799
0.145 0.169
L2 L4
L1
L1
F2
F3
F1
L2 18.50
L3 10.50
L4 34.60
L5 5.50
M
V
V2
Dia.
0.728
0.413
1.362
0.216
D
V2
L3
F4
F(x3)
M
E
2.00 3.00
3.55 3.65
0.078 0.118
0.139 0.143
G
5°
60°
5°
60°
=
=
Cooling method : C
Marking : Type number
Weight : 4.4 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as critical components inlife support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
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