STPS80L15CY [STMICROELECTRONICS]
LOW DROP OR-ing POWER SCHOTTKY RECTIFIER; 低压降的OR-ing功率肖特基整流器型号: | STPS80L15CY |
厂家: | ST |
描述: | LOW DROP OR-ing POWER SCHOTTKY RECTIFIER |
文件: | 总4页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS80L15CY
LOW DROP OR-ing POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
IF(AV)
VRRM
2 x 40 A
15 V
Tj (max)
VF (max)
125 °C
0.33 V
FEATURES AND BENEFITS
A2
K
Max247
PACKAGE,
DUAL
DIODE
A1
CONSTRUCTION, 2 x 40A
15V BLOCKING VOLTAGE SUITABLE FOR 5V
AND 12V OR-ing
EXTREMELY LOW VOLTAGE VOLTAGE
DROP: 0.33V @ 100°C
Max247
OPERATING JUNCTION TEMPERATURE:
125°C
DESCRIPTION
The STPS80L15CY uses proprietary barrier
technology to optimize forward voltage drop for
OR-ing functions in n-1 fault tolerant Switch Mode
Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitivepeak reverse voltage
Value
15
Unit
V
VRRM
IF(RMS) RMS forward current
50
A
IF(AV)
Average forward current
Tc = 110°C Per diode
40
80
A
δ
= 0.5
Per device
IFSM
IRRM
Tstg
Surge non repetitiveforward current
Repetitivepeak reverse current
Storage temperaturerange
tp = 10 ms sinusoidal
400
2
A
A
tp = 2 µs F = 1kHz square
- 65 to + 150
125
°C
°C
V/µs
Tj
Maximum operating junction temperature
Critical rate of rise of reverse voltage
dV/dt
10000
November 1999 - Ed: 4B
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STPS80L15CY
THERMAL RESISTANCES
Symbol
Parameter
Value
0.7
Unit
°
Rth (j-c) Junction to case
Per diode
Total
C/W
0.5
Rth (c)
Coupling
0.3
When the diodes 1 and 2 are used simultaneously:
∆
Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
°
IR *
Reverse leakage current
Tj = 25 C
VR = 5V
4
mA
Tj = 100°C
Tj = 25°C
Tj = 100°C
280
0.44
0.53
0.30
0.40
400
11
VR = 12V
VR = 15V
1.1
A
mA
A
°
Tj = 25 C
16
Tj = 100°C
Tj = 25°C
Tj = 100°C
1.3
VF *
Forward voltage drop
IF = 40 A
IF = 40 A
IF = 80 A
IF = 80 A
0.42
0.33
0.55
0.46
V
°
Tj = 25 C
°
Tj = 100 C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.20 x IF(AV) + 0.0032 x IF
(RMS)
Fig. 1: Average forward power dissipation versus
averageforward current (per diode).
Fig. 2: Average forward current versus ambient
temperature ( =0.5, per diode).
δ
PF(av)(W)
IF(av)(A)
22
50
45
δ
= 0.2
δ
= 0.5
20
18
16
14
12
10
8
6
4
2
0
Rth(j-a)=Rth(j-c)
δ
= 0.1
δ
=
0.05
40
35
30
25
20
15
10
5
δ
= 1
Rth(j-a)=5°C/W
T
T
Tamb(°C)
tp
=tp/T
δ
IF(av) (A)
tp
=tp/T
δ
0
0
25
50
75
100
125
0
5
10 15 20 25 30 35 40 45 50 55 60
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STPS80L15CY
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse (per diode).
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Zth(j-c)/Rth(j-c)
IM(A)
600
1.0
500
0.8
400
300
200
100
0
Tc=25°C
δ=0.5
0.6
Tc=50°C
δ=0.2
0.4
δ=0.1
T
Tc=75°C
IM
0.2
Single pulse
t
t(s)
tp
δ=0.5
=tp/T
δ
tp(s)
0.0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typicalvalues, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
C(nF)
10
1E+3
F=1MHz
Tj=25°C
Tj=100°C
Tj=75°C
1E+2
5
1E+1
Tj=25°C
2
1E+0
VR(V)
VR(V)
1
1E-1
1
2
5
10
20
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Fig. 7: Forward voltage drop versus forward
current (per diode).
IFM(A)
200
100
10
1
Tj=100°C
(typical values)
Tj=100°C
(Maximum values)
Tj=25°C
(Maximumvalues)
VFM(V)
0.5 0.6
0.0
0.1
0.2
0.3
0.4
0.7
0.8
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STPS80L15CY
PACKAGE MECHANICAL DATA
Max247
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
Max.
5.30
2.60
1.40
2.40
3.40
0.80
10.30
5.55
15.90
15.20
4.30
Max.
0.209
0.102
0.055
0.094
0.133
0.031
0.799
0.219
0.626
0.598
0.169
E
A
A
A1
b
0.185
0.087
0.038
0.079
0.118
0.016
0.776
0.211
0.602
0.559
0.146
b1
b2
c
D
D
L1
e
A1
E
b1
L
L
b2
L1
e
c
b
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS80L15CY STPS80L15CY
Max247
4.4g
30
Tube
Cooling method: by conduction(C)
Epoxymeets UL94,V0
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use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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proval of STMicroelectronics.
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1999 STMicroelectronics - Printed in Italy - All rights reserved.
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