STPSC406B-TR [STMICROELECTRONICS]
600 V power Schottky silicon carbide diode; 600 V功率肖特基碳化硅二极管型号: | STPSC406B-TR |
厂家: | ST |
描述: | 600 V power Schottky silicon carbide diode |
文件: | 总8页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPSC406
600 V power Schottky silicon carbide diode
Features
K
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Dedicated to PFC boost diode
A
K
Description
TO-220AC
STPSC406D
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
K
A
NC
DPAK
STPSC406B
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
Table 1.
Device summary
IF(AV)
4 A
VRRM
Tj (max)
QC (typ)
600 V
175 °C
3 nC
September 2009
Doc ID 16283 Rev 1
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www.st.com
8
Characteristics
STPSC406
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
600
11
V
A
DPAK, Tc = 110 °C, δ = 0.5
Average forward
current
IF(AV)
IFSM
IFRM
4
A
A
A
TO-220AC, Tc = 95 °C, δ = 0.5
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
14
10
40
Surge non repetitive
forward current
DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1
Repetitive peak forward
current
14
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1
Tstg
Tj
Storage temperature range
Operating junction temperature(1)
-55 to +175
-40 to +175
°C
°C
1
dPtot
dTj
<
1.
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
T0-220AC
DPAK
5.5
4.5
Rth(j-c)
Junction to case
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ. Max.
Unit
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
-
-
-
-
10
60
50
500
1.9
2.4
Reverse leakage
current
(1)
IR
VR = VRRM
µA
V
1.55
1.9
(2)
VF
Forward voltage drop
IF = 4 A
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 1.20x IF(AV) + 0.3 x IF (RMS)
Table 5.
Symbol
Other parameters
Parameter
Test conditions
Typ.
Unit
Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs
Tj = 150 °C
Qc
C
Total capacitive charge
Total capacitance
3
nC
pF
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
200
20
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STPSC406
Figure 1.
Characteristics
Forward voltage drop versus
forward current (typical values)
Figure 2.
Reverse leakage current versus
reverse voltage applied
(maximum values)
IFM(A)
8
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Tj=175 °C
7
6
5
4
3
2
1
0
Tj=25 °C
Tj=150 °C
Tj=150 °C
Tj=175 °C
Tj=25 °C
VFM(V)
VR(V)
0
50 100 150 200 250 300 350 400 450 500 550 600
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Peak forward current versus case Figure 4.
temperature (TO-220AC)
Peak forward current versus case
temperature (DPAK)
IM(A)
35
IM(A)
35
T
T
δ=0.1
δ=0.1
30
30
tp
=tp/T
tp
=tp/T
δ
δ
25
25
20
15
10
5
δ=0.3
δ=0.5
20
δ=0.3
15
δ=0.5
10
δ=1
δ=0.7
5
0
δ=1
δ=0.7
TC(°C)
75
TC(°C)
75
0
0
25
50
100
125
150
175
0
25
50
100
125
150
175
Figure 5.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 6.
Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
C(pF)
150
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F=1 MHz
OSC=30 mVRMS
Tj=25 °C
V
125
100
75
50
25
tp(s)
VR(V)
Single pulse
0
1
10
100
1000
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
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Characteristics
STPSC406
Figure 7.
Relative variation of thermal
impedance junction to case
versus pulse duration (DPAK)
Figure 8.
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
I
FSM(A)
Z
th(j c)/Rth(j c)
1.E+03
1.E+02
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T=25 °C
c
T=125 °C
c
tp(s)
Single pulse
tp(s)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 9.
Total capacitive charges versus dI /dt (typical values)
F
QC(nC)
7
IF=4 A
V
R=400 V
6
5
4
3
2
1
0
Tj=150 °C
dIF/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
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STPSC406
Package information
2
Package information
●
●
●
Epoxy meets UL94, V0
Cooling method: convection (C)
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 6.
TO-220AC dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
A
C
4.40
1.23
2.40
0.49
0.61
1.14
4.95
10.00
4.60
1.32
2.72
0.70
0.88
1.70
5.15
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
A
H2
Ø I
C
D
E
L5
L7
F
L6
F1
G
L2
H2
L2
L4
L5
L6
L7
L9
M
D
F1
L9
16.40 typ.
0.645 typ.
L4
13.00
2.65
14.00
2.95
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
F
M
E
15.25
6.20
15.75
6.60
G
3.50
3.93
2.6 typ.
0.102 typ.
Diam. I
3.75
3.85
0.147
0.151
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Package information
Table 7.
STPSC406
DPAK dimensions
Dimensions
Millimeters
Min. Max.
Ref.
Inches
Min.
Max.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
E
A
B2
C2
L2
B2
C
D
R
H
L4
C2
D
A1
R
B
G
C
E
G
A2
0.60 MIN.
H
V2
L2
L4
V2
0.80 typ.
0.031 typ.
0.60
0°
1.00
8°
0.023
0°
0.039
8°
Figure 10. Footprint (dimensions in mm)
1.6
6.7
3
3
2.3
2.3
6.7
1.6
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STPSC406
Ordering information
3
Ordering information
Table 8.
Order code
STPSC406D
STPSC406B-TR
Ordering information
Marking
Package
Weight
Base qty Delivery mode
STPSC406D
STPSC406B
TO-220AC
DPAK
1.86 g
0.3g
50
Tube
2500
Tape and reel
4
Revision history
Table 9.
Date
24-Sep-2009
Document revision history
Revision
Changes
1
First issue.
Doc ID 16283 Rev 1
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STPSC406
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