STS01DTP06 [STMICROELECTRONICS]
DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR; 双NPN -PNP互补双极晶体管
| 型号： | STS01DTP06 |
| 厂家： | 
ST |
| 描述： | DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS01DTP06
DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR
PRELIMINARY DATA
Table 1: General Features
Figure 1: Package
V
h
I
C
CE(sat)
FE
0.35 V
HIGH GAIN
> 100
1A
n
n
n
n
LOW V
CE(sat)
SIMPLIFIED CIRCUIT DESIGN
REDUCED COMPONENT COUNT
APPLICATION
n
PUSH-PULL OR TOTEM-POLE
CONFIGURATION
n
n
MOSFET AND IGBT GATE DRIVING
MOTOR, RELAY AND SOLENOID DRIVING
SO-8
DESCRIPTION
The STS01DTP06 is a Hybrid dual NPN-PNP
complementary
power
bipolar
transistor
Figure 2: Internal Schematic Diagram
manufactured by using the latest low voltage
planar technology. The STS01DTP06 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Table 2: Order Codes
Part Number
Marking
Package
Packaging
STS01DTP06T4
S01DTP06
SO-8
Tape & Reel
Rev. 1
April 2005
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STS01DTP06
Table 3: Absolute Maximum Ratings
Symbol
Parameter
NPN
PNP
Unit
V
V
V
Collector-Base Voltage (I = 0)
60
30
5
3
6
-60
-30
-5
-3
-6
V
V
V
A
A
A
A
W
CBO
E
Collector-Emitter Voltage (I = 0)
CEO
B
Emitter-Base Voltage (I = 0)
EBO
C
I
Collector Current
C
I
Collector Peak Current (t < 5ms)
CM
p
I
Base Current
1
2
-1
-2
B
I
Base Peak Current (t < 1ms)
BM
p
o
P
2
Total Dissipation at T = 25 C single
tot
C
o
P
1.6
-65 to 150
150
W
°C
°C
Total Dissipation at T = 25 C couple
Storage Temperature
tot
C
T
stg
T
Max. Operating Junction Temperature
J
For PNP type voltage and current values are negative.
Table 4: Thermal Data
Symbol
Parameter
Unit
(1)
o
Thermal Resistance Junction-ambient
(Single Operation)
Thermal Resistance Junction-ambient
(Dual Operation)
Max
Max
62.5
78
R
C/W
thj-amb
(1)
o
R
C/W
thj-amb
(1) When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec
o
Table 5: Q1-NPN Transistor Electrical Characteristics (T
= 25 C unless otherwise specified)
case
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
I
Collector Cut-off Current
V
V
V
I
= 60 V
= 30 V
= 5 V
0.1
µA
CBO
CB
CE
EB
(I = 0)
E
Collector Cut-off Current
1
1
µA
µA
V
CEO
(I = 0)
B
I
Emitter Cut-off Current
EBO
(I = 0)
C
*
Collector-Emitter
= 10 mA
30
V
C
(BR)CEO
*
Breakdown Voltage
(I = 0)
B
Collector-Emitter
Saturation Voltage
I
I
I
= 1 A
= 2 A
= 1 A
I = 10 mA
0.35
0.85
1
0.7
V
V
V
C
B
CE(sat)
I = 100 mA
C
C
B
*
Base-Emitter
I = 10 mA
1.1
V
V
B
BE(sat)
Saturation Voltage
DC Current Gain
*
h
I
I
= 1 A
= 3 A
V
V
= 2 V
= 2 V
100
30
C
C
CE
CE
FE
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
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STS01DTP06
o
Table 6: Q2-PNP Transistor Electrical Characteristics (T
= 25 C unless otherwise specified)
case
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
I
I
Collector Cut-off Current
V
V
V
I
= -60 V
= -30 V
= -5 V
-0.1
µA
CBO
CB
CE
EB
(I = 0)
E
Collector Cut-off Current
-1
-1
µA
µA
V
CEO
(I = 0)
B
I
Emitter Cut-off Current
EBO
(I = 0)
C
*
Collector-Emitter
= -10 mA
-30
V
C
(BR)CEO
*
Breakdown Voltage
(I = 0)
B
Collector-Emitter
Saturation Voltage
I
I
I
= -1 A
= -2 A
= -1 A
I = -10 mA
-0.35
-0.85
-1
-0.7
V
V
V
C
B
CE(sat)
I = -100 mA
C
C
B
*
Base-Emitter
I = -10 mA
-1.1
V
V
B
BE(sat)
Saturation Voltage
DC Current Gain
*
h
I
I
= -1 A
= -3 A
V
V
= -2 V
= -2 V
100
30
C
C
CE
CE
FE
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
Figure 3: Reverse Biased Area Q1 NPN Tran-
sistor
Figure 4: DC Current Gain Q1 NPN Transistor
3/8
STS01DTP06
Figure 5: DC Current Gain Q1 NPN Transistor
Figure 8: Collector-Emitter Saturation Voltage
Q1 NPN Transistor
Figure 6: Base-Emitter Saturation Voltage Q1
NPN Transistor
Figure 9: Reverse Biased Area Q2 PNP Tran-
sistor
Figure 7: DC Current Gain Q2 PNP Transistor
Figure 10: DC Current Gain Q2 PNP Transistor
4/8
STS01DTP06
Figure 11: Collector-Emitter Saturation Volt-
age Q2 PNP Transistor
Figure 12: Base-Emitter Saturation Voltage Q2
PNP Transistor
Figure 13: Typical Application
5/8
STS01DTP06
Table 7: Revision History
Version
Release Date
Change Designator
22-Apr-2005
1
First Release.
6/8
STS01DTP06
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
7/8
STS01DTP06
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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