STTB6006TV2 [STMICROELECTRONICS]
30A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, ISOTOP-4;
| 型号： | STTB6006TV2 |
| 厂家： | 
ST |
| 描述： | 30A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, ISOTOP-4 超快软恢复二极管 高压超快速软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STTB6006TV1/2
TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE
PRELIMINARY DATA
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
2*30A
600V
60ns
1.3V
K2
A2
A2
K1
trr (typ)
VF (max)
K1
A1
K2
A1
STTB6006TV1
STTB6006TV2
FEATURES AND BENEFITS
SPECIFIC TO THE FOLLOWING OPERA-
TIONS: Snubbingor clamping, demagnetization
and rectification.
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY.
VERY LOW OVERALL POWER LOSSES AND
PARTICULARITY LOW FORWARD VOLTAGE.
DESIGNED FOR HIGH PULSED CURRENT
OPERATIONS.
ISOTOPTM
(Plastic)
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH, B family, drastically cuts losses
in all high voltage operations which require
extremely fast, soft and noise-free power diodes.
They are particularly suitable in the primary circuit
of an SMPS as snubber, clamping or
demagnetizing diodes, and also in most power
converters as high performance rectifier diodes.
Packaged in ISOTOP these 600V devices are
particularly intended for use on 240V domestic
mains.
ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
VRSM
IF(RMS)
IFRM
Parameter
Repetitivepeak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Value
600
Unit
V
600
V
50
A
Repetitivepeak forward current (tp = 5 µs, f = 1kHz)
Max operating junction temperature
Storage temperature
700
A
Tj
-65 to 150
-65 to 150
°C
°C
Tstg
TM : ISOTOP and TURBOSWITCH are trademarks of SGS-THOMSON MICROELECTRONICS.
1/5
May 1995 - Ed : 3B
STTB6006TV1/2
THERMAL AND POWER DATA
Symbol
Parameter
Conditions
Per diode
Value
Unit
Rth(j-c)
Junction to case thermal
resistance
°C/W
Total
Coupling
P1
Conduction power dissipation
(see fig. 5)
Per diode
IF(AV) = 30A δ =0.5
Tc= 74°C
W
W
Pmax
Total power dissipation
Per diode
Pmax = P1 + P3 (P3 = 10% P1) Tc= 66°C
STATIC ELECTRICAL CHARACTERISTICS (see Fig.5)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VF
Forward voltage drop
IF =30A
Tj = 25°C
Tj = 125°C
1.4
1.3
V
V
*
IR
Reverse leakage current VR =0.8
x VRRM
Tj = 25°C
Tj = 125°C
150
5
µA
mA
**
Test pulses widths : * tp = 380 µs, duty cycle < 2%
** tp = 5 ms , duty cycle < 2%
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING (see Fig.6)
Symbol
Parameter
Reverse
Test Conditions
Min
Typ
Max
Unit
trr
Tj = 25°C
ns
recovery time
IF = 0.5 A IR = 1A
Irr = 0.25A
60
IF = 1 A dIF/dt =-50A/µs VR =30V
110
45
IRM
Maximum
reverse
recovery current dIF/dt= -500 A/µs
Tj = 125°C VR = 400V IF =30A
dIF/dt = -240 A/µs
A
/
40
S factor
Softness factor Tj = 125°C VR= 400V
IF =30A
dIF/dt= -240 A/µs
dIF/dt= -500 A/µs
0.5
Typ
TURN-ON SWITCHING (see Fig.7)
Symbol
Parameter
Forward
Test Conditions
Min
Max
Unit
tfr
Tj = 25°C
ns
recovery time
IF =30 A, dIF/dt = 240 A/µs
measured at, 1.1 × VFmax
500
VFp
Peak forward
voltage
Tj = 25°C
IF =30A, dIF/dt = 240 A/µs
IF =150A, dIF/dt = 500 A/µs
V
8
10
2/5
STTB6006TV1/2
APPLICATION DATA
The TURBOSWITCH ”B” is especially designed to
provide the lowest overall power losses in any
demagnetization and rectification. In such
applications (fig.1 to fig.4), the way of calculating
the power losses is given below :
application
such
as
snubbing,clamping,
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4 Watts
CONDUCTION
LOSSES
REVERSE
LOSSES
SWITCHING
LOSSES
P1 Watts
(Fig. 5)
P2 Watts
(Fig. 5)
OFF : P3 Watts
ON : P4 Watts
(Fig. 6 & 7)
Fig. 1 : SNUBBER DIODE.
Fig. 2 : CLAMPINGDIODE.
PWM
PWM
t
t
T
T
F = 1/T
= t/T
F = 1/T
= t/T
Fig. 3 : DEMAGNETIZING DIODE.
Fig. 4 : RECTIFIER DIODE.
3/5
STTB6006TV1/2
APPLICATION DATA (Cont’d)
Fig. 5: STATIC CHARACTERISTICS
Conduction losses :
P1 = V . I + R . I (
F RMS)
I
2
t0 F(AV)
d
I
F
with
Rd
Vt0 = 1.00 V
Rd = 0.010 Ohm
V
R
(Max values at 125°C)
V
V
V
tO
F
I
R
Reverse losses :
P2 = V . I . (1 - δ)
R
R
Fig. 6: TURN-OFF CHARACTERISTICS
Turn-off losses :
I
VR × IRM 2 × S × F
6 x dIF ⁄ dt
dI /dt
F
FREEWHEELING
OPERATION
P3 =
ta tb
V
t
dI /dt
R
IRM
trr = ta + tb
S = tb/ta
VR
Turn-off losses :
(with non negligible serial inductance)
I
RECTIFIER
dIF /dt = VR /L
ta tb
OPERATION
VR × IRM 2 × S × F
6 x dIF ⁄ dt
L × IRM 2 × F
P3’ =
+
V
t
dI /dt
R
IRM
2
VR
P3 and P3’ are suitable for power MOSFET and
IGBT
trr = ta + tb
S = tb/ta
Fig. 7: TURN-ON CHARACTERISTICS
I
F
I
Fmax
dI /dt
F
0
t
Turn-on losses :
V
F
P4 = 0.4 (V - V ) . I . t . F
Fmax fr
FP
F
V
Fp
V
F
1.1V
F
0
t
tfr
4/5
STTB6006TV1/2
PACKAGE MECHANICAL DATA
ISOTOP Screw version
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
REF.
M
G
A
A
B
C
D
E
F
G
H
I
11.80
8.90
12.20
9.10
0.465
0.350
0.077
0.029
0.496
0.988
1.240
0.157
0.161
0.161
0.586
1.185
1.488
0.307
0.216
0.480
0.358
0.081
0.034
0.504
1.004
1.248
/
OJ
O
B
1.95
2.05
0.75
0.85
12.60
25.10
31.50
4.00
12.80
25.50
31.70
O/ I
/
OI
D
H
E
F
4.10
4.10
14.90
30.10
37.80
7.80
4.30
4.30
15.10
30.30
38.20
8.20
0.169
0.169
0.595
1.193
1.504
0.323
J
K
L
C
K
L
screw H M4
P
M
O
P
5.50
Cooling method : C
Marking : Type number
Weight : 28 g (without screws)
Electrical isolation : 2500V
Capacitance : < 45pF
Inductance : < 5nH
(RMS)
- Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the
heatsink and the 4 screws given with the screw version).
- The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and
2.2 mm max.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components inlife support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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