STTH112A [STMICROELECTRONICS]
HIGH VOLTAGE ULTRAFAST RECTIFIER; 高压超快整流器型号: | STTH112A |
厂家: | ST |
描述: | HIGH VOLTAGE ULTRAFAST RECTIFIER |
文件: | 总6页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
STTH112/A/U
HIGH VOLTAGE ULTRAFAST RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
1 A
1200 V
175 °C
1.65 V
Tj (max)
VF (max)
FEATURES AND BENEFITS
■
■
■
■
■
Low forward voltage drop
High reliability
High surge current capability
Soft switching for reduced EMI disturbances
Planar technology
DO-41
STTH112
DESCRIPTION
The STTH112, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagneti-
zation in power supplies and other power switching
applications.
SMA
STTH112A
SMB
STTH112U
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive peak reverse voltage
Value
1200
850
1
Unit
V
VRRM
V(RMS) RMS voltage
IF(AV) Average forward current
V
Tl = 85°C δ =0.5
DO-41
SMA
A
Tl = 115°C δ =0.5
Tl = 125°C δ =0.5
SMB
IFSM
Forward surge current t = 8.3 ms
Storage temperature range
DO-41
SMA
20
18
A
SMB
Tstg
Tj
- 50 + 175
+ 175
°C
°C
Maximum operating junction temperature
January 2003 - Ed: 2
1/6
STTH112/A/U
THERMAL PARAMETERS
Symbol
Parameter
Value
45
Unit
Rth (j-l)
Junction to lead
L = 10 mm
DO-41
SMA
°C/W
30
SMB
25
Rth (j-a) Junction to ambient
L = 10 mm
DO-41
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR
Reverse leakage current
VR = 1200V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
5
µA
50
1.9
VF
Forward voltage drop
IF = 1 A
V
1.17
1.65
To evaluate the maximum conduction losses use the following equation :
2
P = 1.35 x IF(AV) + 0.3 x IF (RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
IF = 0.5 A
Tj = 25°C
75
ns
Irr = 0.25 A IR = 1A
tfr
Forward recovery time
IF = 1 A
dIF/dt = 50 A/µs
VFR = 1.1 x VFmax
Tj = 25°C
500
30
ns
V
VFP
Forward recovery voltage
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current.
P(W)
I
(A)
FM
2.2
100.0
10.0
1.0
δ = 0.2
δ = 0.1
δ = 0.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
δ = 0.05
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
δ = 1
Tj=25°C
(maximum values)
T
I
(A)
F(AV)
V
(V)
FM
tp
1.1
=tp/T
1.0
δ
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2/6
STTH112/A/U
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Lleads = 10mm) (DO-41).
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA).
Z
/R
Z
/R
th(j-c) th(j-c)
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.5
δ = 0.5
δ = 0.2
T
T
δ = 0.2
δ = 0.1
δ = 0.1
Single pulse
t (s)
p
t (s)
p
tp
1.E+03
Single pulse
tp
1.E+03
=tp/T
=tp/T
δ
δ
1.E-01
1.E+00
1.E+01
1.E+02
1.E-01
1.E+00
1.E+01
1.E+02
Fig. 3-3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4)(SMB).
Z
/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.5
δ = 0.2
δ = 0.1
T
t (s)
p
Single pulse
tp
1.E+03
=tp/T
δ
1.E-01
1.E+00
1.E+01
1.E+02
Fig. 4-1: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35µm)
(DO-41, SMB).
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35µm)
(SMA).
R (°C/W)
th(j-a)
R (°C/W)
th(j-a)
140
110
100
90
80
70
60
50
40
30
20
10
0
130
120
110
100
90
DO-41
Lleads=10mm
80
SMB
SMA
70
60
50
40
30
20
10
S(cm²)
S(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/6
STTH112/A/U
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
Millimeters Inches
Min.
E1
REF.
Min.
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
Max.
2.70
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Max.
0.106
0.008
0.065
0.016
0.220
0.181
0.116
0.063
A1
A2
b
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
D
E
c
E
A1
E1
D
A2
C
L
b
L
FOOTPRINT (in millimeters)
1.65
1.45
2.40
1.45
4/6
STTH112/A/U
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
Millimeters Inches
Min.
E1
REF.
Min.
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
Max.
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
A1
A2
b
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
D
E
c
A1
E
A2
E1
D
C
L
b
L
FOOTPRINT (in millimeters)
2.3
1.52
2.75
1.52
5/6
STTH112/A/U
PACKAGE MECHANICAL DATA
DO-41
DIMENSIONS
Millimeters Inches
C
A
C
REF.
O/ B
Min.
Max.
Min.
Max.
A
B
C
D
4.07
5.20
0.160
0.080
1.102
0.028
0.205
2.04
28
2.71
0.107
0.034
O
/
D
O
/
D
0.712
0.863
Ordering code
STTH112
Marking
STTH112
H12
Package
DO-41
SMA
Weight
Base qty Delivery mode
0.34 g
0.068 g
0.11 g
0.34 g
2000
5000
2500
5000
Ammopack
Tape & reel
Tape & reel
Tape & reel
STTH112A
STTH112U
STTH112RL
U12
SMB
STTH112
DO-41
■
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
6/6
相关型号:
©2020 ICPDF网 联系我们和版权申明