STW43NM50N [STMICROELECTRONICS]
N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247; N沟道500 V， 0.070 Ω ， 37所述的MDmesh II ™功率MOSFET TO- 247
| 型号： | STW43NM50N |
| 厂家： | 
ST |
| 描述： | N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247 |
| 文件： | 总12页 (文件大小：479K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW43NM50N
N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET
TO-247
Features
VDSS @
Tjmax
RDS(on)
max
Type
ID
STW43NM50N
550 V
< 0.085 Ω
37 A
■ 100% avalanche tested
3
■ Low input capacitance and gate charge
■ Low gate input resistance
2
1
TO-247
Application
■ Switching applications
Description
Figure 1.
Internal schematic diagram
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
$ꢄꢅꢆ
'ꢄꢂꢆ
3ꢄꢇꢆ
3#ꢀꢁꢂꢃꢀ
Table 1.
Device summary
Order code
STW43NM50N
Marking
Package
TO-247
Packaging
43NM50N
Tube
January 2010
Doc ID 14168 Rev 5
1/12
www.st.com
12
Contents
STW43NM50N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 14168 Rev 5
STW43NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
500
25
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
37
A
ID
23
A
(1)
IDM
148
A
PTOT
dv/dt (2)
Tstg
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Storage temperature
255
W
V/ns
°C
°C
15
–55 to 150
150
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 37 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.49
50
°C/W
°C/W
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
15
A
Single pulse avalanche energy
EAS
1000
mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)
Doc ID 14168 Rev 5
3/12
Electrical characteristics
STW43NM50N
2
Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
500
V
breakdown voltage
VDD= 400 V, ID = 37 A,
VGS=10 V
dv/dt (1) Drain source voltage slope
30
V/ns
Zero gate voltage
IDSS
V
DS = Max rating
1
µA
µA
drain current (VGS = 0)
VDS = Max rating, @125 °C
100
Gate-body leakage
IGSS
VGS
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 18.5 A
2
3
Static drain-source on
resistance
RDS(on)
0.070 0.085
Ω
1. Characteristic value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS=15 V I = 18.5 A
-
18
-
S
, D
pF
pF
pF
Input capacitance
Ciss
Coss
Crss
4200
290
20
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
V
GS = 0, VDS = 0 to 400 V
-
-
590
-
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 37 A,
GS = 10 V,
140
72
nC
nC
nC
V
(see Figure 15)
23
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
Rg
Gate input resistance
-
1.4
-
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/12
Doc ID 14168 Rev 5
STW43NM50N
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Switching times
Parameter
Symbol
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
30
20
ns
ns
ns
ns
VDD = 250 V, ID = 18.5 A
RG = 4.7 ΩVGS = 10 V
(see Figure 14)
-
-
Turn-off delay time
Fall time
140
42
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
37
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
148
(2)
VSD
Forward on voltage
ISD = 37 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
530
11
ns
µC
A
ISD = 37 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 60 V (see Figure 16)
IRRM
42
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 37 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
630
14
ns
µC
A
Qrr
IRRM
45
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 14168 Rev 5
5/12
Electrical characteristics
STW43NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM00875v1
I
D
(A)
100
10
1
10µs
100µs
1ms
10ms
0.1
0.1
V
DS(V)
1
10
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM00874v1
AM00873v1
I
D
I
D
(A)
(A)
VGS=10V
7V
100
10
80
60
40
20
0
8
6V
6
4
2
5V
0
0
0
5
10
15
20
25
30 VDS(V)
V
GS(V)
2
4
6
8
10
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
AM00868v1
AM00870v1
Gfs(S)
R
DS(on)
(Ω)
-50°C
VGS=10V
I
D=18.5A
20.5
25°C
0.74
0.72
0.70
0.68
0.66
150°C
15.5
10.5
5.5
0.5
0
15
I
D(A)
15
ID(A)
5
10
20 25 30
5
10
20 25 30
6/12
Doc ID 14168 Rev 5
STW43NM50N
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM00871v1
AM00872v1
V
(V)
GS
C
(pF)
V
DD=400V
12
V
GS=10V
ID
=37A
10000
1000
Ciss
10
8
VDS=50V
f=1MHz
VGS=0
6
4
Coss
Crss
100
10
2
0
50
150
Q
g(nC)
0.1
1
10
100
ID(A)
0
100
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
v
AM00866v1
AM00867v1
V
GS(th)
R
DS(on)
(norm)
(norm)
1.1
V
GS=10V
2.1
V
DS=VGS
I
D=18.5A
I
D=250µA
1.0
0.9
0.8
0.7
1.7
1.3
0.9
0.5
-25
T
J(°C)
-25
TJ(°C)
0
25 50 75 100
0
25 50 75 100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
vs temperature
VDSS
AM00876v1
AM00869v1
VSD
(V)
BVDSS
(norm)
ID=1mA
-50°C
1.0
25°C
1.05
1.01
150°C
0.8
0.6
0.4
0.97
0.93
ISD(A)
10
20
30
25
TJ(°C)
0
-25
0
50 75 100
Doc ID 14168 Rev 5
7/12
Test circuits
STW43NM50N
3
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
8/12
Doc ID 14168 Rev 5
STW43NM50N
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 14168 Rev 5
9/12
Package mechanical data
STW43NM50N
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
10/12
Doc ID 14168 Rev 5
STW43NM50N
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
15-Nov-2007
04-Aug-2008
15-Oct-2008
27-Jan-2009
08-Jan-2010
1
2
3
4
5
First release
Document status promoted from preliminary data to datasheet
2.1: Electrical characteristics (curves) has been corrected
VGS value has been corrected in Table 2
Updated VGS on Table 2: Absolute maximum ratings.
Doc ID 14168 Rev 5
11/12
STW43NM50N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Doc ID 14168 Rev 5
相关型号：
STW43NM60ND
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode
STMICROELECTR
STW43NM60NDD
35A, 600V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
STMICROELECTR
STW4510AE
7-CHANNEL POWER SUPPLY SUPPORT CKT, PBGA84, 6 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-84
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明