STX23NM60ND_10 [STMICROELECTRONICS]

N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247; N沟道600 V ， 0.150 Ω ， 19.5 A， FDmesh ？二功率MOSFET （具有快速二极管） D2PAK ， I2PAK ，TO- 220，TO- 220FP ，TO- 247


型号：	STX23NM60ND_10
厂家：	ST
描述：	N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247 N沟道600 V ， 0.150 Ω ， 19.5 A， FDmesh ？二功率MOSFET （具有快速二极管） D2PAK ， I2PAK ，TO- 220，TO- 220FP ，TO- 247 二极管
文件：	总18页 (文件大小：817K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STx23NM60ND

N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET

(with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247

Features

V_DSS

R_DS(on)

max.

Type

I_D

(@T_jmax

)

STx23NM60ND

650 V

< 0.180 Ω

19.5 A

D²PAK

I²PAK

■ The worldwide best R

* area amongst the

DS(on)

fast recovery diode devices

TO-247

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-220FP

TO-220

■ High dv/dt and avalanche capabilities

Application

Figure 1.

Internal schematic diagram

Switching applications

$ꢅꢆꢇ

Description

The device is an N-channel FDmesh™ II Power

MOSFET that belongs to the second generation

of MDmesh™ technology. This revolutionary

Power MOSFET associates a new vertical

structure to the company's strip layout and

associates all advantages of reduced on-

resistance and fast switching with a n intrinsic

fast-recovery body diode.It is therefore strongly

recommended for bridge topologies, in particular

ZVS phase-shift converters.

'ꢅꢁꢇ

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Part number

Marking

Package

Packaging

STB23NM60ND

STI23NM60ND

STF23NM60ND

STP23NM60ND

STW23NM60ND

23NM60ND

D²PAK

I²PAK

Tape and reel

Tube

TO-220FP

TO-220

TO-247

Tube

October 2010

Doc ID 14367 Rev 3

1/18

www.st.com

Contents

STB/I/F/P/W23NM60ND

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

D²PAK, I²PAK

Unit

TO-220FP

TO-220, TO-247

V_DS

V_GS

I_D

Drain-source voltage (V_GS=0)

Gate-source voltage

600

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

19.5

11.7

19.5 ⁽¹⁾

11.7 ⁽¹⁾

78 ⁽¹⁾

I_D

(2)

I_DM

P_TOT

Total dissipation at T_C= 25 °C

150

dv/dt ⁽³⁾Peak diode recovery voltage slope

V/ns

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; T_C= 25 °C)

V_ISO

2500

T_stg

T_j

Storage temperature

-55 to 150

150

°C

Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I_SD≤ 19.5 A, di/dt ≤ 600 A/µs, V_DD=80% V_(BR)DSS

Table 3.

Symbol

Thermal data

Parameter

D²PAK I²PAK TO-220 TO-247 TO-220FP Unit

Thermal resistance junction-

case max

R_thj-case

R_thj-amb

T_l

0.83

62.5

3.6

°C/W

°C

Thermal resistance junction-

amb max

62.5

Maximum lead temperature for

soldering purposes

300

Table 4.

Symbol

Avalanche characteristics

Parameter

Max value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

I_AS

Single pulse avalanche energy

E_AS

700

(starting T_j= 25 °C, I_D= I_AS, V_DD= 50 V)

Doc ID 14367 Rev 3

3/18

Electrical characteristics

STB/I/F/P/W23NM60ND

Electrical characteristics

= 25 °C unless otherwise specified)

CASE

Table 5.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source breakdown

voltage

V_(BR)DSS

I_D= 1 mA, V_GS= 0

600

_DD= 480 V, I_D= 19.5 A,

dv/dt⁽¹⁾Drain-source voltage slope

V/ns

V_GS= 10 V

V_DS= Max rating,

µA

Zero gate voltage drain

I_DSS

current (V_GS= 0)

V_DS= Max rating,@125 °C

100

Gate body leakage current

I_GSS

V_GS= 20 V

100

(V_DS= 0)

V_GS(th)Gate threshold voltage

V_DS= V_GS, I_D= 250 µA

Static drain-source on

resistance

R_DS(on)

V_GS= 10 V, I_D= 10 A

0.150 0.180

1. Characteristic value at turn off on inductive load

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

(1)

g_fs

Forward transconductance V_DS=15 V, I_D= 10 A

Input capacitance

C_iss

C_oss

C_rss

2050

V_DS= 50 V, f =1 MHz,

V_GS= 0

Output capacitance

Reverse transfer

capacitance

Equivalent output

capacitance

(2)

C_{oss eq.}

V_GS= 0, V_DS= 0 to 480 V

318

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

Gate input resistance

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 480 V, I_D= 19.5 A

V_GS= 10 V

(see Figure 19)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2. C_{oss eq.}is defined as a constant equivalent capacitance giving the same charging time as C_osswhen V_DS

increases from 0 to 80% V_DSS

4/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Electrical characteristics

Min. Typ. Max. Unit

Table 7.

Symbol

Switching times

Parameter

Test conditions

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

V_DD= 300 V, I_D= 10 A,

R_G= 4.7 Ω, V_GS= 10 V

(see Figure 18)

Turn-off delay time

Fall time

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

I_SD

Source-drain current

19.5

(1)

I_SDM

Source-drain current (pulsed)

(2)

V_SD

Forward on voltage

I_SD= 19.5 A, V_GS=0

1.3

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

190

1.2

µC

I_SD= 19.5 A, di/dt =100

A/µs, V_DD= 100 V

Q_rr

(see Figure 20)

I_RRM

V_DD= 100 V

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

260

2.0

µC

di/dt =100 A/µs, I_SD= 19.5

A T_j= 150 °C

Q_rr

I_RRM

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Doc ID 14367 Rev 3

5/18

Electrical characteristics

STB/I/F/P/W23NM60ND

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-220,

D PAK, I PAK

Figure 3.

Figure 5.

Figure 7.

Thermal impedance for TO-220,

D PAK, I PAK

Figure 4.

Figure 6.

6/18

Safe operating area for TO-220FP

Thermal impedance for TO-220FP

Safe operating area for TO-247

Thermal impedance for TO-247

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Electrical characteristics

Figure 8.

Output characteristics

Figure 9.

Transfer characteristics

Figure 10. Transconductance

Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

AM01537v1

AM01538v1

VGS

(V)

(pF)

VDD=480V

V^GS=10V

I^D=19.5A

10000

1000

Ciss

100

Coss

Crss

0.1

100

Q^g(nC)

V^DS(V)

Doc ID 14367 Rev 3

7/18

Electrical characteristics

STB/I/F/P/W23NM60ND

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized B

vs temperature

VDSS

8/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Test circuits

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

2200

3.3

μF

IG=CONST

V^DD

100Ω

Vⁱ=20V=VGMAX

D.U.T.

V^G

VGS

2200

μF

D.U.T.

2.7kΩ

47kΩ

1kΩ

AM01468v1

AM01469v1

Figure 20. Test circuit for inductive load

switching and diode recovery times

Figure 21. Unclamped inductive load test

circuit

FAST

DIODE

L=100μH

2200

μF

D.U.T.

3.3

μF

VDD

3.3

μF

1000

μF

V^DD

R^G

D.U.T.

AM01470v1

AM01471v1

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

ton

tdon

toff

tdoff

V(BR)DSS

90%

10%

90%

IDM

10%

VDS

VDD

90%

V^GS

10%

AM01472v1

AM01473v1

Doc ID 14367 Rev 3

9/18

Package mechanical data

STB/I/F/P/W23NM60ND

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

10/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Package mechanical data

Table 9.

Dim.

TO-220FP mechanical data

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.5

2.75

0.7

0.45

0.75

1.15

4.95

2.4

1.70

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Figure 24. TO-220FP drawing

Dia

7012510_Rev_K

Doc ID 14367 Rev 3

11/18

Package mechanical data

STB/I/F/P/W23NM60ND

TO-220 type A mechanical data

Dim

Min

Typ

Max

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

1.27

10.40

2.70

5.15

1.32

6.60

2.72

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

28.90

3.75

3.85

2.95

2.65

0015988_Rev_S

12/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Package mechanical data

TO-247 Mechanical data

mm.

Typ

Dim.

Min.

Max.

4.85

5.15

2.20

1.0

2.60

1.40

2.40

3.40

2.0

3.0

0.40

19.85

15.45

0.80

20.15

15.75

5.45

18.50

5.50

14.20

14.80

4.30

øP

øR

3.70

3.55

3.65

4.50

5.50

Doc ID 14367 Rev 3

13/18

Package mechanical data

STB/I/F/P/W23NM60ND

D²PAK (TO-263) mechanical data

mm.

Dim.

Min.

Typ.

Max.

4.40

0.03

0.70

1.14

0.45

1.23

8.95

7.50

4.60

0.23

0.93

1.70

0.60

1.36

9.35

10.40

8.50

2.54

4.88

5.28

15.85

2.69

2.79

1.40

1.75

2.49

2.29

1.27

1.30

0.4

0°

8°

0079457_P

14/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Package mechanical data

I²PAK (TO-262) mechanical data

Typ

inch

Typ

Dim

Min

Max

Min

Max

4.40

2.40

0.61

1.14

0.49

1.23

8.95

2.40

4.95

4.60

2.72

0.88

1.70

0.70

1.32

9.35

2.70

5.15

10.40

0.173

0.094

0.024

0.044

0.019

0.048

0.352

0.094

0.194

0.393

0.511

0.137

0.050

0.181

0.107

0.034

0.066

0.027

0.052

0.368

0.106

0.202

0.410

0.551

0.154

0.055

3.50

1.27

3.93

1.40

Doc ID 14367 Rev 3

15/18

Packaging mechanical data

STB/I/F/P/W23NM60ND

Packaging mechanical data

D PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

1.5

12.8 13.2 0.504 0.520

20.2 0795

24.4 26.4 0.960 1.039

100 3.937

0.059

30.4

1.197

BASE QTY

BULK QTY

TAPE MECHANICAL DATA

1000

inch

DIM.

MIN. MAX. MIN. MAX.

10.5 10.7 0.413 0.421

15.7 15.9 0.618 0.626

1.5

1.6 0.059 0.063

1.59 1.61 0.062 0.063

1.65 1.85 0.065 0.073

11.4

4.8

3.9

11.9

1.9

11.6 0.449 0.456

5.0 0.189 0.197

4.1 0.153 0.161

12.1 0.468 0.476

2.1 0.075 0.082

1.574

0.25 0.35 0.0098 0.0137

23.7 24.3 0.933 0.956

16/18

Doc ID 14367 Rev 3

STB/I/F/P/W23NM60ND

Revision history

Table 10. Document revision history

Date

Revision

Changes

22-Jan-2008

11-Dec-2008

06-Oct-2010

First release

Document status promoted from preliminary data to datasheet.

Corrected unit in Table 5: On/off states

Doc ID 14367 Rev 3

17/18

STB/I/F/P/W23NM60ND

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18/18

Doc ID 14367 Rev 3

STX23NM60ND_10 [STMICROELECTRONICS]

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