T1030-600W [STMICROELECTRONICS]
SNUBBERLESS TRIAC; 无缓冲器TRIAC![T1030-600W](http://pdffile.icpdf.com/pdf1/p00167/img/icpdf/T1030_935391_icpdf.jpg)
型号: | T1030-600W |
厂家: | ![]() |
描述: | SNUBBERLESS TRIAC |
文件: | 总5页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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T1020-600W
T1030-600W
®
SNUBBERLESS TRIAC
FEATURES
A2
A1
■
■
■
■
■
ITRMS = 10 A
VDRM = VRRM = 600V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
G
DESCRIPTION
The T1020-600W and 1030-600W triacs use high
performance glass passivated chip technology,
housed in a fully molded plastic ISOWATT220AB
package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 90°C
10
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
110
125
A
tp = 10 ms
(1/2 cycle, 50 Hz)
I2t
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
78
20
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
A/µs
Non Repetitive
100
Tstg
Tj
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Parameter
Value
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
600
V
September 2001 - Ed: 1A
1/5
T1020-600W / 1030-600W
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360° conduction angle)
3.0
GATE CHARACTERISTICS (maximum values)
PG (AV)= 100 mW PGM = 2 W (tp = 20 µs)
IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Quadrant
I-II-III
T1020
T1030
Unit
mA
V
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
MAX
MAX
MIN
20
30
VGT
I-II-III
1.5
0.2
2
VGD
tgt
I-II-III
V
VD=VDRM
IG=500mA
I-II-III
TYP
µs
dlG/dt= 3Aµs
IH *
IT= 100mA
Gate open
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 125°C
MAX
MAX
MAX
MAX
MIN
35
50
VTM
*
ITM= 14A tp= 380µs
1.5
10
2
V
IDRM
IRRM
VDRM rated
VRRM rated
µA
mA
V/µs
dV/dt *
Linear slope up to
VD=67%VDRM
200
10
300
20
Gate open
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
2/5
T1020-600W / 1030-600W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P(W)
14
14
12
10
8
-85
Rth = 0 o C/W
2.5o C/W
5o C/W
180 O
= 180o
12
= 120o
7o C/W
-95
10
= 90o
8
= 60o
-105
-115
-125
6
6
= 30 o
4
2
4
2
Tamb (oC)
I
(A)
T(RMS)
0
0
0
1
2
3
4
5
6
7
8
9
10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : RMS on-state current versus case temper-
ature.
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
Zth/Rth
1
I
(A)
T(RMS)
12
10
8
Zth(j-c)
= 180o
0.1
Zth(j-a)
6
4
0.01
2
Tcase(oC)
tp(s)
1E+2 5E+2
0
1E-3
1E+1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
120
Tj initial = 25oC
2.6
2.4
2.2
2.0
100
80
60
40
20
0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
1
100
1000
-40 -20
0
20
40
60
80 100 120 140
3/5
T1020-600W / 1030-600W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum val-
ues).
2
2
I
(A). I t (A s)
I
(A)
TM
TSM
1000
100
10
1000
100
10
Tj initial = 25oC
I
TSM
Tj initial
25oC
2
I
t
Tj max
Vto =0.9V
Rt =0.038
Tj max
V
(V)
tp(ms)
TM
1
0
1
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5 6
10
4/5
T1020-600W / 1030-600W
DIMENSIONS
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
B
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
10.00
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
0.173
0.098
0.098
0.016
0.030
0.045
0.045
0.195
0.094
0.394
0.181
0.106
0.108
0.028
0.039
0.067
0.067
0.205
0.106
0.409
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
16.00 typ.
0.630 typ.
28.60
9.80
30.60
10.60
16.40
9.30
1.125
0.386
0.626
0.354
0.118
1.205
0.417
0.646
0.366
0.126
15.90
9.00
3.00
3.20
■
■
■
■
■
Cooling method: C
Marking: Type number
Weight: 2.1 g
Recommended torque value: 0.55 m.N.
Maximum torque value: 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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