TN815-600H-TR [STMICROELECTRONICS]
8A SCRs; 8A可控硅
| 型号： | TN815-600H-TR |
| 厂家： | 
ST |
| 描述： | 8A SCRs |
| 文件： | 总9页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN8, TS8 and TYNx08 Series
®
SENSITIVE & STANDARD
8A SCRs
MAIN FEATURES:
Symbol
A
Value
8
Unit
G
I
A
T(RMS)
K
V
/V
600 to 1000
0.2 to 15
V
DRM RRM
A
A
I
mA
GT
K
A
G
DESCRIPTION
K
A
IPAK
(TS8-H)
(TN8-H)
DPAK
(TS8-B)
(TN8-B)
G
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
A
A
K
K
A
A
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
G
G
TO-220AB
(TYNx)
TO-220AB
(TS8-T)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current (180° conduction angle)
T(RMS)
Tc = 110°C
Tc = 110°C
8
5
A
A
IT
Average on-state current (180° conduction angle)
(AV)
TS8/TN8 TYN
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
73
70
100
95
TSM
Tj = 25°C
A
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
24.5
45
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
50
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage (for TN8 & TYN only)
5
RGM
April 2002 - Ed: 4A
1/9
TN8, TS8 and TYNx08 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SENSITIVE
Symbol
Test Conditions
TS820
Unit
I
GT
MAX.
200
µA
V
V
= 12 V
R = 140 Ω
D
L
V
MAX.
MIN.
MIN.
0.8
0.1
8
GT
V
Tj = 125°C
V
I
= V
R = 3.3 kΩ
R
= 220 Ω
GK
V
GD
D
DRM
L
V
= 10 µA
V
RG
RG
I
I = 50 mA
R
R
= 1 kΩ
= 1 kΩ
MAX.
MAX.
MIN.
5
mA
mA
V/µs
V
H
T
GK
I
I
= 1 mA
6
L
G
GK
V
I
= 65 % V
R
= 220 Ω
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
5
D
DRM
GK
V
= 16 A tp = 380 µs
MAX.
MAX.
MAX.
MAX.
1.6
0.85
46
5
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
I
DRM
RRM
V
= V
R
= 220 Ω
GK
DRM
RRM
1
■ STANDARD
Symbol
Test Conditions
TN805 TN815 TYNx08
Unit
I
MIN.
MAX.
MAX.
MIN.
0.5
5
2
2
mA
GT
15
15
V
V
= 12 V
R = 33 Ω
L
D
V
V
1.3
0.2
40
V
V
GT
Tj = 125°C
= V
R = 3.3 kΩ
L
GD
D
DRM
I = 100 mA Gate open
MAX.
MAX.
25
30
mA
mA
I
T
H
I
I = 1.2 I
G GT
30
50
50
70
L
V
I
= 67 % V
Gate open
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
150
150
V/µs
V
dV/dt
D
DRM
V
= 16 A tp = 380 µs
1.6
TM
TM
V
V
Threshold voltage
0.85
46
5
t0
R
mΩ
Dynamic resistance
d
I
I
µA
DRM
V
= V
RRM
DRM
mA
2
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
20
60
th(j-c)
TO-220AB
IPAK
th(j-a)
100
70
²
DPAK
S = 0.5 cm
S= copper surface under tab
2/9
/T
TN8, TS8 and TYNx08 Series
PRODUCT SELECTOR
Part Number
Voltage (xxx)
700 V 800 V
Package
Sensitivity
600 V
1000 V
TN805-xxxB
TN805-xxxH
TN815-xxxB
TN815-xxxH
TS820-xxxB
TS820-xxxH
TS820-xxxT
TYNx08
X
X
X
X
X
X
X
X
X
X
X
X
5 mA
5 mA
DPAK
IPAK
15 mA
15 mA
0.2 mA
0.2 mA
0.2 mA
15 mA
DPAK
IPAK
X
X
X
DPAK
IPAK
TO-220AB
TO-220AB
X
X
ORDERING INFORMATION
TN 8 05 - 600 B (-TR)
STANDARD
SCR
SERIES
PACKING MODE:
Blank:Tube
-TR: DPAK Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
CURRENT: 8A
SENSITIVITY:
05: 5mA
15: 15mA
VOLTAGE:
600: 600V
800: 800V
TS 8 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
PACKING MODE:
Blank:Tube
-TR: DPAK Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
CURRENT: 8A
VOLTAGE:
600: 600V
700: 700V
SENSITIVITY:
20: 200µA
T:TO-220AB
TYN 6 08 (RG)
STANDARD
SCR
PACKING MODE
Blank: Bulk
RG:Tube
SERIES
VOLTAGE:
CURRENT: 8A
6: 600V
8: 800V
10: 1000V
3/9
TN8, TS8 and TYNx08 Series
OTHER INFORMATION
Part Number
TN805-x00B
Marking
TN805x00
Weight
Base Quantity
Packing mode
0.3 g
0.3 g
0.4 g
0.3 g
0.3 g
0.4 g
0.3 g
0.3 g
0.4 g
2.3 g
2.3 g
2.3 g
75
2500
75
Tube
Tape & reel
Tube
TN805-x00B-TR
TN805-x00H
TN815-x00B
TN815-x00B-TR
TN815-x00H
TS820-x00B
TS820-x00B-TR
TS820-x00H
TS820-x00T
TYNx08
TN805x00
TN805x00
TN815x00
TN815x00
TN815x00
TS820x00
TS820x00
TS820x00
TS820x00T
TYNx08
75
Tube
2500
75
Tape & reel
Tube
75
Tube
2500
75
Tape & reel
Tube
50
Tube
250
50
Bulk
TYNx08RG
TYNx08
Tube
Note: x = voltage
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus case temperature.
IT(av)(A)
P(W)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
8
α = 180°
7
DC
6
5
4
3
α = 180°
360°
2
1
1.0
IT(av)(A)
α
Tcase(°C)
0
0.0
0
1
2
3
4
5
6
0
25
50
75
100
125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
IT(av)(A)
K = [Zth(j-c)/Rth(j-c)]
2.0
1.8
1.6
1.0
DC
1.4
1.2
1.0
0.8
0.6
0.4
0.5
0.2
α =180°
0.2
0.0
Tamb(°C)
50 75
tp(s)
0.1
0
25
100
125
1E-3
1E-2
1E-1
1E+0
4/9
TN8, TS8 and TYNx08 Series
Fig. 3-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board for
DPAK).
Fig. 4-1: Relative variation of gate trigger current
and holding current versus junction temperature
for TS8 series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
K = [Zth(j-a)/Rth(j-a)]
2.0
1.00
1.8
IGT
1.6
1.4
DPAK
1.2
IH & IL
TO-220AB
1.0
0.8
0.6
0.4
0.2
0.0
0.10
0.01
Rgk = 1kΩ
Tj(°C)
40 60
tp(s)
1E+0
-40 -20
0
20
80 100 120 140
1E-2
1E-1
1E+1
1E+2 5E+2
Fig. 4-2: Relative variation of gate trigger current
and holding current versus junction temperature
for TN8 & TYN series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS8 series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
IH[Rgk] / IH[Rgk = 1kΩ]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IGT
IH & IL
Tj(°C)
40 60
Rgk(kΩ)
-40 -20
0
20
80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS8 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS8 series.
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
dV/dt[Cgk] / dV/dt [Rgk = 220 Ω]
15.0
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220Ω
12.5
10.0
7.5
5.0
2.5
Rgk(kΩ)
Cgk(nF)
0.0
0
20 40 60 80 100 120 140 160 180 200 220
5/9
TN8, TS8 and TYNx08 Series
Fig. 8: Surge peak on-state current versus
number of cycles. TS8/TN8/TYN.
Fig. 9: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
a
2
2
ITSM(A)
ITSM(A),I t(A s)
1000
100
10
100
90
Tj initial = 25°C
TYN
tp = 10ms
One cycle
80
70
60
50
40
30
20
10
0
TYN
dI/dt
limitattion
ITSM
Non repetitive
Tj initial = 25°C
TS8/TN8
TS8/TN8
TYN
Repetitive
Tcase = 110 °C
I2t
TS8/TN8
tp(ms)
Number of cycles
0.01
0.10
1.00
10.00
1
10
100
1000
Fig. 10: On-state characteristics (maximum
values).
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(DPAK).
Rth(j-a) (°C/W)
ITM(A)
100
50.0
Tj max.:
Vto = 0.85V
Rd = 46mΩ
80
60
40
20
10.0
Tj = Tj max.
Tj = 25°C
1.0
2
S(cm )
VTM(V)
0
0.1
0
2
4
6
8
10 12 14 16 18 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
6/9
TN8, TS8 and TYNx08 Series
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max
Min.
Max.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
R
C2
D
R
E
G
H
L2
L4
R
0.80 typ.
0.031 typ.
0.60
1.00
0.023
0.039
0.2 typ.
0.007 typ.
0°
V2
0°
8°
8°
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
7/9
TN8, TS8 and TYNx08 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
A
A
A1
A3
B
2.2
0.9
2.4
1.1
1.3
0.9
5.4
0.85
0.086
0.035
0.027
0.025
0.204
0.094
0.043
0.051
0.035
0.212
0.033
E
C2
B2
0.7
L2
0.64
5.2
B2
B3
B5
B6
C
D
0.3
0.035
0.95
0.6
0.6
6.2
6.6
4.6
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
H
B3
L1
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
B6
L
A1
B
C2
D
V1
E
6.4
4.4
15.9
9
G
B5
C
H
16.3 0.626
G
A3
L
9.4
1.2
1
0.354
0.031
L1
L2
V1
0.8
0.8
0.031 0.039
10°
10°
TO-220AB (Plastic - with notches)
DIMENSIONS
Millimeters
REF.
Inches
A
H2
Min.
Max.
Min.
Max.
Dia
C
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
L5
L7
D
E
L6
F
L2
F2
F1
F2
G
D
F1
L9
G1
H2
L2
L4
L5
L6
L7
L9
M
L4
F
16.4 typ.
0.645 typ.
M
G1
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
E
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
8/9
TN8, TS8 and TYNx08 Series
PACKAGE MECHANICAL DATA
TO-220AB (Without notches)
DIMENSIONS
REF.
Millimeters
Inches
B
C
b2
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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9/9
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