TP30-220 [STMICROELECTRONICS]
TRISILTM; TRISILTM型号: | TP30-220 |
厂家: | ST |
描述: | TRISILTM |
文件: | 总6页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TP30-xxx Series
TRISILTM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
VOLTAGE RANGE: FROM 62 V TO 270 V.
HOLDING CURRENT :
IH = 150 mA min.
REPETITIVE PEAK PULSE CURRENT :
IPP = 30 A, 10/1000 µs.
JEDEC REGISTERED PACKAGE OUTLINE
F126
(JEDEC DO-204AC)
DESCRIPTION
SCHEMATIC DIAGRAM
The TP30-xxx series has been designed to protect
telecommunication equipment against lightning
surges and overvoltages induced by AC power
lines.
Peak Surge
Voltage
(V)
Voltage
Waveform
Current
Admissible Necessary
COMPLIES WITH THE
FOLLOWING STANDARDS:
Waveform
Ipp
(A)
Resistor
(µs)
(µs)
(Ω)
(CCITT) ITU-K20
(CCITT) ITU-K17
VDE0433
1000
1500
2000
2000
10/700
10/700
10/700
1.2/50
5/310
5/310
5/310
1/20
25
38
40
50
-
-
10
-
VDE0878
IEC-1000-4-5
level 2
level 3
10/700
1.2/50
5/310
8/20
25
50
-
-
FCC Part 68, lightning surge
type A
1500
800
10/160
10/560
10/160
10/560
65
50
15.5
8.0
FCC Part 68, lightning surge
type B
1000
9/720
5/320
25
-
BELLCORETR-NWT-001089
First level
2500
1000
2/10
10/1000
2/10
10/1000
125
30
15.0
23.3
BELLCORETR-NWT-001089
Second level
5000
2/10
2/10
125
15.0
CNET l31-24
1000
0.5/700
0.8/310
25
-
November 1998 - Ed: 5A
1/6
TP30-xxx Series
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
W
Power dissipationon infinite heatsink
Peak pulse current
P
T
amb = 50 °C
3
IPP
10/1000 µs
8/20 µs
30
60
A
ITSM
I2t
Non repetitivesurge peak on-statecurrent
I2t valuefor fusing
tp = 20 ms
tp = 20 ms
VRM
15
1
A
A2s
dV/dt
Critical rate of riseof off-state voltage
5
kV/µs
Tstg
Tj
Storage temperaturerange
Maximum junctiontemperature
- 55 to + 150
150
°C
°C
Maximumleadtemperatureforsolderingduring 10sat5mmforcase
TL
230
°C
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Junction to leads
Rth (j-l)
Rth (j-a)
100
Junction to ambient on printed circuit
with standard footprint dimension
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Symbol
VRM
IRM
VR
Parameter
Stand-offvoltage
Leakage current at stand-offvoltage
ContinuousReverse voltage
Breakdown voltage
Breakovervoltage
VBR
VBO
IH
Holding current
IBO
Breakovercurrent
IPP
Peak pulse current
C
Capacitance
2/6
TP30-xxx Series
C
IR @ VR
max
Type
IRM @ VRM
VBO @ IBO
max
IH
max
min
typ
typ
note 1
note 2
note 3
note 4
note 5
µA
V
µA
V
V
mA
mA
pF
TP30-62
2
2
2
2
2
2
2
2
2
2
56
61
50
50
50
50
50
50
50
50
50
50
62
68
82
90
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
50
50
40
40
35
35
30
30
30
30
20
20
16
16
14
14
12
12
12
12
TP30-68
TP30-100
TP30-120
TP30-130
TP30-180
TP30-200
TP30-220
TP30-240
TP30-270
90
100
120
130
180
200
220
240
270
133
160
173
240
267
293
320
360
108
117
162
180
198
216
243
Note 1:
I
measured at V guarantee V
BRmin
≥ V
R
R
R
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3: See test circuit 2.
Note 4:
Note 5:
V
= 1V, F = 1MHz.
= 50V, F = 1MHz.
R
V
R
TEST CIRCUIT 1 FOR IBO and VBO parameters:
= 20ms
tp
Auto
Transformer
220V/2A
R1
static
relay.
140
R2
240
K
V
V
BO
measure
out
D.U.T
I
BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices= Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 250 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 250 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
3/6
TP30-xxx Series
TEST CIRCUIT 2 for IH parameter.
R
- V
P
D.U.T.
V
= - 48 V
BAT
Surge generator
This is a GO-NOGOTest which allowsto confirmthe holdingcurrent (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Firethe D.U.T with a surge Current : Ipp = 10A, 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
4/6
TP30-xxx Series
Fig. 1:
Fig. 2:
Relative variation of holding current versus
junction temperature.
Non repetitive surge peak on-sate current
versus overload duration(Tj initial = 25°C).
IH[Tj] / IH[Tj=25°C]
ITSM(A)
20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
F = 50Hz
15
10
5
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
-40
-20
0
20
40
60
80
100 120
t(s)
Tj(°C)
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
Note: ForVRM upper than 56V, the curve is extrapolated (dotted line)
Fig. 4: On-state voltage versus on-state current
(typical values).
IT(A)
50
C[VR]/C[VR=1V]
1.0
Tj = 25°C
20
F = 1MHz
0.5
10
5
0.2
0.1
2
1
1
10
100
300
0
1
2
3
4
5
6
7
8
9
10
VR(V)
VT(V)
Fig. 6:
junction temperature.
Relative variation of VBO voltage versus
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration.
Vbo[Tj]/Vbo[Tj=25°C]
Zth(j-a)(°CW)
1.10
1E+2
1.05
1E+1
1E+0
1E-1
1.00 270 V
0.95
62 V
0.90
-40
-20
0
20
Tj(°C)
40
60
80
100
5/6
1E-3
1E-2
1E-1
1E+0
tp(s)
1E+1
1E+2 5E+2
TP30-xxx Series
ORDER CODE
TP 30 - 62
TRISIL PROTECTION
VOLTAGE
IPP = 30 A
MARKING : Logo, Date Code, Part Number.
PACKAGE MECHANICAL DATA
F126 (Plastic) (JEDEC DO-204AC)
C
C
A
D
D
B
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
B
C
D
6.05 6.20 6.35 0.238 0.244 0.250
2.95 3.00 3.05 0.116 0.118 0.120
26
31 1.024
1.220
0.76 0.81 0.86 0.030 0.032 0.034
Packaging: Tape and reel.
Weight : 0.40g
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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