TSD2932 [STMICROELECTRONICS]
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs; 射频功率晶体管HF / VHF / UHF N沟道MOSFET
| 型号： | TSD2932 |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs |
| 文件： | 总13页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD2932
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
PRELIMINARY DATA
ν
ν
ν
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
ν
POUT = 300W MIN. WITH 15 dB GAIN @175
MHz
DESCRIPTION
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 is
intended for use in 50V dc large signal
applicationsup to 250 MHz
M244
epoxy sealed
ORDER CODE
SD2932
BRANDING
TSD2932
PIN CONNECTION
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
Parameter
Value
125
Unit
V(BR)DSS Drain Source Voltage
V
V
VDGR
VGS
ID
125
Drain-Gate Voltage (RGS = 1MΩ)
Gate-Source Voltage
±20
40
V
Drain Current
A
PDISS
Tj
Power Dissipation
500
W
oC
oC
Max. Operating Junction Temperature
Storage Temperature
+200
TSTG
-65 to 150
THERMAL DATA
Rth(j-c)
Rth(c-s)
Junction-Case Thermal Resistance
Case Heatsink Thermal Resistance
0.35
0.12
oC/W
oC/W
Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
1/13
March 2000
SD2932
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC (per section)
Symbol
Parameter
IDS = 100 mA
VDS = 50 V
VDS = 0 V
Min.
Typ.
Max.
Unit
V
V(BR)DSS VGS = 0 V
125
IDSS
IGSS
VGS = 0 V
VGS = 20 V
VDS = 10 V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
5
5
5
3
mA
µA
V
VGS(Q)
VDS(on)
gfs
ID = 250 mA
ID = 10 A
2
5
V
ID = 5 A
mho
pF
pF
pF
CISS
VDS = 50 V
VDS = 50 V
VDS = 50 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
480
190
18
COSS
CRSS
REF.7163911A
DYNAMIC
Symbol
POUT
GPS
Parameter
Min.
300
15
Typ.
Max.
Unit
W
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 175 MHz
VDD = 50 V
IDQ = 500 mA
Pout = 300 W
Pout = 300 W
Pout = 300 W
VDD = 50 V
VDD = 50 V
VDD = 50 V
IDQ = 500 mA
IDQ = 500 mA
IDQ = 500 mA
16
60
dB
ηD
50
%
Load
5:1
VSWR
Mismatch All Phase Angles
IMPEDANCE DATA
FREQ.
175 MHz
ZIN (Ω)
ZDL (Ω)
0.92 - j 0.14
3.17 + j 4.34
Measured Gate to Gate and Drain toDrain, respectively.
2/13
SD2932
Maximum Thermal Resistance vs Case
Temperature
DC Safe OperatingArea
0.42
100
0.4
(1)
10
0.38
0.36
1
1
10
100
1000
0.34
25 30 35 40 45 50 55 60 65 70 75 80 85
Vds, DRAIN SOURCE VOLTAGE (V)
Tc, Case Temperature (°C)
(1) Currentin this area may be limited by RDS(on)
Twosides, each section equally loaded
Capacitance vs Drain-Source Voltage
Drain Current vs Gate Voltage
10000
20
T=-20 °C
Vds=10 V
T=+25 °C
15
1000
Ciss
T=+80 °C
Coss
10
5
100
Crss
10
0
0
10
20
30
40
50
2
2.5
3
3.5
4
4.5
5
5.5
6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Gate Voltage vs Case Temperature
1.15
1.1
Id=5 A
Id=7 A
Id=9 A
Id=10 A
1.05
Id=11 A
1
0.95
0.9
Id=4 A
Id=1 A
Id=2 A
Id=.1 A
0.85
Id=.25 A
0.8
-25
0
25
50
75
100
Tcase, CASE TEMPERATURE (°C)
3/13
SD2932
TYPICAL PERFORMANCE (175 MHz)
Output Power vs Input Power
OutputPower vs Input Power
500
600
500
400
300
200
T=-20 °C
Vdd=50 V
T=+25 °C
T=+80 °C
400
300
200
100
0
Vdd=40 V
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Vdd=50V
Idq=2 x 250mA
F=175Mhz
100
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Pin, INPUT POWER (W)
Pin, INPUT POWER(W)
Power Gain vs. Output Power
Efficiency vs. Output Power
80
70
60
50
40
30
17
16
15
14
13
12
11
10
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Vdd=50V
Idq=2 x 250mA
F=175Mhz
20
10
0
100
200
300
400
500
0
100
200
300
400
500
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs Supply Voltage
Output Power vs Gate Voltage
450
400
300
200
100
0
T=+25 °C
Idq=2 x 250mA
F=175Mhz
400
Pin=15.6 W
350
T=-20 °C
T=+80 °C
300
250
200
150
100
Pin=7.8 W
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Pin=3.9 W
24 26 28 30 32 34 36 38 40 42 44 46 48 50
-3
-2
-1
0
1
2
3
Vdd,DRAIN VOLTAGE (V)
VGS, GATE_SOURCE VOLTAGE (V)
4/13
SD2932
175 MHz Test Circuit Schematic (Production Test Circuit)
REF. 1022256B
5/13
SD2932
175 MHz Test Circuit ComponentPart List
Component
Part Number
Vendor
Description
R1/R2
R3/R4
R5/R6
R7/R8
CR2412-1W-471JB
VENKEL
DALE
VENKEL
DALE
470 Ohm 1 W, Surface Mount Chip Resistor
360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equiv.
470 Ohm 1 W, Surface Mount Chip Resistor
560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead
Resistor
CR2512-1W-471JB
RS 2B
R9/R10
C1/C4
C2/C7/C8
C17/C19
C20/C21
C3
C5
C6
C9/C10
C11-C12
C13
534 - 1 -1 - 203
ATC130B681KP50X
ATC200B103MW50X
SPECTROL 20 KOhm 3.09 W, 10 Turn Wirewound Precision Potentiometer
ATC
ATC
680 pF ATC 130B Surface Mount Ceramic Chip Capacitor
10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
ATC200B122MW50X
ATC100B750KP500X
406
ATC100B470KP500X
ATC100B430KP500X
ATC
ATC
ARCO
ATC
ATC
10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
75 pF ATC 100B Surface Mount Ceramic Chip Capacitor
ST40 25 pF -115pF Miniature Variable Trimmer
47 pF ATC 100B Surface Mount Ceramic Chip Capacitor
43 pF ATC 100B Surface Mount Ceramic Chip Capacitor
C14-C15
C24-C25
C16-C18
C22-C23
C26
C27
C28
B1
ATC700B122MW50X
ATC700B471MP200X
GRM43-4X7R104K500 MURATA
C1812X7R501-103KNE VENKEL
GRM43-4X7R-104K500 MURATA
ATC
ATC
1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor
470 pF ATC 700B Surface Mount Ceramic Chip Capacitor
0.1 µF / 500V Surface Mount Ceramic Chip Capacitor
0.01 µF/ 500V Surface Mount Ceramic Chip Capacitor
0.01 µF / 500V Surface Mount Ceramic Chip Capacitor
10 µF / 63 V Aluminum Electrolytic Axial Lead Capacitor
50 Ohm RG316, O.D. 0.076[1.93] L=11.80[299.72] Flexible
Coaxial Cable 4 Turns thru Fair-rite Bead
SME63T10RM
MARCON
B2
T1
83242
BELDEN
50 Ohm RG-142B O.D 0.165[4.19] L=11.80[299.72] Flexible
Coaxial Cable
R.F. Transformer 4:1, 25 Ohm RG316-25, O.D 0.080[2.03]
L=5.90[149.86] Flexible Coaxial Cable 2 Turns Thru Fair-rite
Multi-aperture Core
T2
UT141-25
MICRO
COAX
R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D.
0.141[3.58] L=5.90[149.86]
L1
83242
BELDEN
Inductor λ 1/4 Wave 50 Ohm O.D. 0.165[4.19] L=11.80[299.72]
Flexible Coaxial Cable 2 Turns Thru Fair-rite Bead
FB1
FB2
FB3
FB4
FB5
FB6
PCB
2643665802
2843009902
2518068007
2743021447
2643801002
2843010402
G0600M1016QA
FAIR-RITE Shield Bead
CORP
FAIR-RITE Multi-aperture Core
CORP
FAIR-RITE Multilayer Ferrite Chip Bead (Surface Mount)
CORP
FAIR-RITE Surface Mount Emi Shield Bead
CORP
FAIR-RITE Shield Bead
CORP
FAIR-RITE Multi-aperture Core
CORP
ROGERS
CORP
Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1oz
EDCu, Both sides, εr = 2.55
6/13
SD2932
175 MHz Test Circuit Photomaster
175 MHz Text Fixture
7/13
SD2932
TYPICAL BROADBAND DATA (175 - 230 MHz)
Input Power vs Frequency
Power Gain vs Frequency
18
17
16
15
12
10
8
6
Vdd =50V
Idq = 300 mA
Pout = 250W
14
Vdd = 50V
Idq = 300 mA
Pout =25 0W
4
13
2
12
160 170 180 190 200 210 220 230 240
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
FREQUENCY (MHz)
Efficiency vs Frequency
Return Loss vs Frequency
80
0
Vdd =50V
Idq = 300 mA
Vdd = 50V
Idq = 300 mA
Pout =25 0W
-2
75
Pout =25 0W
-4
-6
70
65
60
55
50
-8
-10
-12
-14
45
-16
160 170 180 190 200 210 220 230 240
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
FREQUENCY (MHz)
1 dB Compression Point vs Frequency
350
Vdd = 50V
Idq = 300 mA
325
300
275
250
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
8/13
SD2932
175 - 230 MHz Circuit Layout (Engineering Fixture)
175 -230 MHz Circuit Layout Component Part List
PCB
T1
1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8
50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE
9:1 Transformer, 16.5 Ohm Flexible Coax Cable 0.1”, 3 Long
4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long
8.2 pF Ceramic Cap
T2 / T3
T4 / T5
C1
C2 / C3
C4
100 pF Chip Cap
2 - 18 pF Chip Cap
C5
47 pF Ceramic Cap
C6 / C11
C7
47 nF Ceramic Cap
56 pF ATC Chip Cap
C8 / C9 / C13
C10
C12
C14
R1 / R3
R2
470 pF ATC Chip Cap
100 nF Ceramic Cap
2x330 nF / 500 V Cap
10 nF / 63 V Electrolityc Cap
47 Ohm Resistor
6.8K Ohm Chip Resistor
4.7K Ohm MultiTurns Trim Resistor
8.2K Ohm Resistor
R4
R5
R6
3.3K Ohm / 5 W Resistor
6.8 V Zener Diode
D1
L1
20 nH Inductor
L2
70 nH Inductor
L3
30 nH Inductor
L4
10 nH Inductor
L5
15 nH Inductor
9/13
SD2932
TYPICAL BROADBAND DATA (88 - 108 MHz)
Input Power vs Frequency
Power Gain vs Frequency
22
21
20
19
18
17
16
4
Vdd = 50V
Idq = 200 mA
Pout = 30 0W
3.5
3
Vdd = 50V
Idq = 200 mA
Pout= 30 0W
2.5
85
90
95
100
105
110
85
90
95
100
105
110
110
110
FREQUENCY (MHz)
FREQUENCY (MHz)
Efficiency vs Frequency
Return Loss vs Frequency
80
78
76
74
72
70
68
66
64
62
60
0
-2
Vdd = 50V
-4
Idq = 200 mA
Pout = 30 0W
-6
-8
-10
-12
-14
-16
-18
-20
Vdd = 50V
Idq = 200 mA
Pout = 30 0W
85
90
95
100
105
110
85
90
95
100
105
FREQUENCY (MHz)
FREQUENCY (MHz)
2nd Harmonic vs Frequency(88 - 108 MHz)
3rd Harmonic vs Frequency (88 - 108)
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
Vdd = 50V
Idq = 200 mA
Pout =30 0W
Vdd = 50V
Idq = 200 mA
Pout = 30 0W
85
90
95
100
105
110
85
90
95
100
105
FREQUENCY (MHz)
FREQUENCY (MHz)
10/13
SD2932
88 - 108 MHz Circuit Layout(Engineering Fixture)
88 -108 MHz Circuit Layout Component Part List
PCB
T1
1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8
50 Ohm Flexible Coax Cable OD 0.06”, 5”” Long
9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE
4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long
50 Ohm Flexible Coax Cable OD 0.1”, 5” Long
vk200
T2 / T3
T4 / T5
T6
FB1
C1
10 pF Ceramic Cap
C2 / C3 / C4 / C7 / C8 1 nF Chip Cap
C5 / C6
C9
1 nF ATC chip Cap
470 pF ATC Chip Cap
100 nF Chip Cap
C10
C11
R1
100 uF / 63 V Electrolytic Cap
56 Ohm Resistor
R2 / R4
R3
10 Ohm Chip Resistor
10K Ohm Resistor
R5
5.6 Ohm Resistor
R6
10K Ohm, 10 Turn Trim Resistor
3.3K Ohm / 5 W Resistor
15 Ohm / 1 W Resistor
6.6 V Zener Diode
R7
R8
D1
L1
10 nH Inductor
L2
40 nH Inductor
L3
70 nH Inductor
11/13
SD2932
12/13
SD2932
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