TYN810RG [STMICROELECTRONICS]

10A SCR; 可控硅10A


型号：	TYN810RG
厂家：	ST
描述：	10A SCR 可控硅10A 栅极触发装置可控硅整流器局域网
文件：	总6页 (文件大小：64K)
中文：	中文翻译
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TYNx10 Series

10A SCR

STANDARD

Table 1: Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

400, 600 and 800

DESCRIPTION

The TYNx10 Silicon Controlled Rectifiers is a high

performance glass passivated technology.

TO-220AB

Table 2: Order Codes

This general purpose Silicon Controlled Rectifiers

is designed for power supply up to 400Hz on resis-

tive or inductive load.

Part Numbers

TYN410RG

TYN610RG

TYN810RG

Marking

TYN410

TYN610

TYN810

Table 3: Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

I_T(RMS)

T_c= 100°C

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

6.4

105

100

IT_(AV)

T_c= 100°C

t_p= 8.3 ms

t_p= 10 ms

Non repetitive surge peak on-state

current

I_TSM

T_j= 25°C

A²^S

t_p= 10 ms T_j= 25°C

T_j= 125°C

I t

I t Value for fusing

Critical rate of rise of on-state current

I_G= 100 mA , dI_G/dt = 0.1 A/µs

dI/dt

A/µs

I_GM

P_G(AV)

P_GM

t_p= 20 µs

T_j= 125°C

Peak gate current

Average gate power dissipation

Maximum gate power

t_p= 20 µs T_j= 125°C

TYN410

400

600

800

V_DRM

V_RRM

T_j= 125°C

Repetitive peak off-state voltage

TYN610

TYN810

T_stg

T_j

- 40 to + 150

- 40 to + 125

Storage junction temperature range

Operating junction temperature range

°C

T_L

Maximum lead temperature for soldering during 10s at 2mm from case

260

February 2006

REV. 2

1/6

TYNx10 Series

Tables 4: Electrical Characteristics (T_j= 25°C, unless otherwise specified)

Symbol

Test Conditions

R_L= 33 Ω

V_D= V_DRMR_L= 3.3 kΩ

Value

Unit

I_GT

MAX.

MIN.

TYP.

MAX.

TYP.

V_D= 12 V (D.C.)

V_GT

V_GD

t_gt

1.5

0.2

T_j= 110°C

V_D= V_DRMI_G= 40 mA dI_G/dt = 0.5 A/µs

I_T= 100 mA Gate open

I_G= 1.2 x I_GT

µs

I_H

I_L

Linear slope up to:

V_D= 67 % V_DRMGate open

dV/dt

V_TM

MIN.

200

V/µs

I_TM= 20 A tp = 380 µs

MAX.

1.6

T_j= 25°C

µA

I_DRM

I_RRM

V_DRM= V_RRM

MAX.

TYP.

T_j= 110°C

t_q

V_D= 67 % V_DRMI_TM= 20 A V_R= 25 V

dI_TM/dt = 30 A/µs dV_D/dt = 50 V/µs

T_j= 110°C

µs

Table 5: Thermal Resistance

Symbol

Parameter

Value Unit

R_th(j-c)

R_th(j-a)

Junction to case (D.C.)

Junction to ambient

2.5

°C/W

Figure 1: Maximum average power dissipation

versus average on-state current

Figure 2: Correlation between maximum

average power dissipation and maximum

allowable temperature (T_amband T_lead

)

P(W)

(°C)

case

R_th= 0°C/W

R_th= 6°C/W

R_th= 4°C/W R_th= 2°C/W

α = 180°

100

105

110

115

α = 180°

α = 120°

α = 90°

α = 60°

α = 30°

360°

120

125

(A)

(°C)

T(AV)

amb

100

120

140

2/6

TYNx10 Series

Figure 3: Average on-state current versus case

temperature

Figure 4: Relative variation of thermal

impedance versus pulse duration

I (A)

T(AV)

K=[Z

]

th(j-c) th(j-c)

Z_th(j-c)

D.C.

α = 180°

Z_th(j-a)

0.1

t (s)

T (°C)

case

0.01

70 80

90 100 110 120 130

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

Figure 5: Relative variation of gate trigger

current versus junction temperature

Figure 6: Surge peak on-state current versus

number of cycles

,I ,I [T ] / I ,I ,I [T =25°C]

H L j GT H L j

I (A)

TSM

2.5

120

100

t_p=10ms

One cycle

I_GT

1.5

T_jinitial=25°C

I_H& I_L

0.5

T (°C)

Number of cycles

100

1000

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110

Figure 7: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding values of I²t

Figure 8: On-state characteristics (maximum

values)

(A), I²t (A²s)

(A)

TSM

1000

100

T_jinitial = 25°C

T_j=max

I_TSM

I²t

100

T_j=25°C

T_jmax.:

V_t0=0.82V

R_d=24mΩ

t (ms)

(V)

3/6

TYNx10 Series

Figure 9: Ordering Information Scheme

TYN

10 RG

Standard SCR series

Voltage

4 = 400V

Current

10 = 10A

Packing mode

RG = Tube

Table 6: Product Selector

Voltage (xxx)

Part Numbers

Sensitivity

Package

400 V

600 V

800V

TYN410RG

TYN610RG

TYN810RG

15 mA

TO-220AB

4/6

TYNx10 Series

Figure 10: TO-220AB Package Mechanical Data

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

REF.

15.20

15.90 0.598

0.625

Ø I

3.75

0.147

a2 13.00

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

0.409

0.034

0.051

0.181

0.027

0.107

0.106

0.259

0.151

10.00

0.61

1.23

4.40

0.49

2.40

6.20

3.75

ØI

I4 15.80 16.40 16.80 0.622 0.646 0.661

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

2.60

0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These

packages have a Lead-free second level interconnect . The category of second level interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The

maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an

ST trademark. ECOPACK specifications are available at: www.st.com.

Table 7: Ordering Information

Ordering type

TYN410RG

TYN610RG

TYN810RG

Marking

TYN410

TYN610

TYN810

Package

Weight Base qty Delivery mode

2.3 g 50 Tube

TO-220AB

Table 8: Revision History

Date

Revision

Description of Changes

Sep-2001

First issue.

TO-220AB delivery mode changed from bulk to tube.

ECOPACK statement added.

13-Feb-2006

5/6

TYNx10 Series

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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6/6

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