VNP14NV04 [STMICROELECTRONICS]
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET; “ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET
| 型号： | VNP14NV04 |
| 厂家： | 
ST |
| 描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总29页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNB14NV04/VND14NV04
/VND14NV04-1/VNP14NV04/VNS14NV04
®
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
R
I
V
clamp
DS(on)
lim
VNB14NV04
VND14NV04
VND14NV04-1
VNP14NV04
VNS14NV04
3
1
TO-252 (DPAK)
SO-8
35 mΩ
12 A
40 V
3
2
3
2
1
TO-2201
TO-251 (IPAK)
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
2
D PAK
3
1
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ORDER CODES
TUBE
PACKAGE
T&R
2
D PAK
VNB14NV04
VNB14NV0413TR
■ ESD PROTECTION
TO-252 (DPAK) VND14NV04
TO-251 (IPAK) VND14NV04-1
VND14NV0413TR
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
-
-
-
TO-220
SO-8
VNP14NV04
VNS14NV04
■ COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
applications. Built in thermal shutdown, linear
current limitation |and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
The VNB14NV04, VND14NV04, VND14NV04-1,
VNP14NV04, VNS14NV04, are monolithic
devices designed in STMicroelectronics VIPower
M0-3 Technology, intended for replacement of
standard Power MOSFETS from DC up to 50KHz
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
July 2003
1/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ABSOLUTE MAXIMUM RATING
Value
Symbol
Parameter
Unit
2
SO-8
DPAK
TO-220
IPAK
D PAK
V
Drain-source Voltage (V =0V)
Internally Clamped
V
V
DS
IN
V
Input Voltage
Internally Clamped
IN
IN
I
Input Current
+/-20
mA
Ω
R
Minimum Input Series Impedance
Drain Current
10
Internally Limited
-15
IN MIN
I
I
A
D
R
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
A
V
4000
V
ESD1
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
V
16500
V
ESD2
P
Total Dissipation at T =25°C
4.6
74
93
74
74
74
93
W
tot
c
Maximum Switching Energy (L=0.4mH;
E
mJ
MAX
R =0Ω; V =13.5V; T
=150ºC; I =18A)
L
bat
jstart
L
T
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally limited
Internally limited
-55 to 150
°C
°C
°C
j
T
c
T
stg
CONNECTION DIAGRAM (TOP VIEW)
SO-8 Package (*)
1
DRAIN
DRAIN
DRAIN
DRAIN
SOURCE
8
SOURCE
SOURCE
INPUT
4
5
2
(*) For the pins configuration related to DPAK, D PAK, IPAK, TO-220 see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
RIN
IIN
INPUT
SOURCE
VIN
2/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
THERMAL DATA
Symbol
Value
Parameter
Unit
2
SO-8
DPAK TO-220
IPAK
D PAK
R
Thermal Resistance Junction-case
MAX
1.7
1.7
1.7
1.7
°C/W
°C/W
°C/W
thj-case
R
R
Thermal Resistance Junction-lead
MAX
27
thj-lead
thj-amb
Thermal Resistance Junction-ambient MAX
90 (*)
65 (*)
62
102
52 (*)
2
(*) When mounted on a standard single-sided FR4 board with 0.5cm of Cu (at least 35 µm thick) connected to all DRAIN pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
Parameter
Drain-source Clamp
Voltage
Test Conditions
V =0V; I =7A
Min
Typ
Max
Unit
V
40
45
55
V
CLAMP
IN
D
Drain-source Clamp
Threshold Voltage
V
V =0V; I =2mA
36
V
V
CLTH
IN
D
V
Input Threshold Voltage
V
=V ; I =1mA
0.5
2.5
INTH
DS
DS
IN
D
Supply Current from Input
Pin
I
V
=0V; V =5V
100
6.8
150
µA
ISS
IN
Input-Source Clamp
Voltage
I =1mA
6
8
IN
V
V
INCL
I =-1mA
-1.0
-0.3
30
IN
V
V
=13V; V =0V; T =25°C
Zero Input Voltage Drain
DS
DS
IN
j
I
µA
DSS
Current (V =0V)
=25V; V =0V
75
IN
IN
ON
Symbol
Parameter
Test Conditions
V =5V; I =7A; T=25°C
Min
Typ
Max
35
Unit
Static Drain-source On
Resistance
IN
D
j
R
mΩ
DS(on)
V =5V; I =7A
70
IN
D
3/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
=13V; I =7A
Min
Typ
18
Max
Unit
S
g
(*)
V
V
fs
DD
D
Transconductance
Output Capacitance
C
=13V; f=1MHz; V =0V
400
pF
OSS
DS
IN
SWITCHING
Symbol
Parameter
Test Conditions
Min
Typ
80
Max
250
Unit
ns
t
t
t
t
Turn-on Delay Time
Rise Time
d(on)
V
V
=15V; I =7A
D
DD
t
350
450
150
1.5
9.7
9
1000
1350
500
ns
r
=5V; R =R =10Ω
IN MIN
gen
gen
Turn-off Delay Time
Fall Time
ns
d(off)
(see figure 1)
t
ns
f
Turn-on Delay Time
Rise Time
4.5
µs
µs
µs
µs
d(on)
V
V
=15V; I =7A
D
DD
t
30.0
25.0
30.0
r
=5V; R =2.2KΩ
gen
gen
Turn-off Delay Time
Fall Time
d(off)
(see figure 1)
t
10.2
f
V
V
V
=15V; I =7A
D
DD
(di/dt)
Turn-on Current Slope
Total Input Charge
16
A/µs
on
=5V; R =R =10Ω
IN MIN
gen
gen
=12V; I =7A; V =5V; I =2.13mA
DD
D
IN
gen
Q
36.8
nC
i
(see figure 5)
SOURCE DRAIN DIODE
Symbol
(*)
Parameter
Test Conditions
Min
Typ
0.8
300
0.8
5
Max
Unit
V
V
Forward On Voltage
I
I
=7A; V =0V
SD
SD
SD
IN
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=7A; di/dt=40A/µs
ns
µC
A
rr
Q
V
=30V; L=200µH
rr
DD
I
(see test circuit, figure 2)
RRM
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
V =5V; V =13V
Min
Typ
Max
Unit
I
Drain Current Limit
12
18
24
A
lim
IN
DS
V =5V; V =13V
Step Response Current
Limit
IN
DS
t
45
µs
dlim
Overtemperature
Shutdown
T
150
175
200
°C
jsh
T
Overtemperature Reset
Fault Sink Current
135
10
°C
jrs
I
V =5V; V =13V; T =T
jsh
15
20
mA
gf
IN
DS
j
starting T =25°C; V =24V
j
DD
Single Pulse
E
V = 5V; R =R
=10Ω; L=24mH
400
mJ
as
IN
gen
IN MIN
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/29
2
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
PROTECTION FEATURES
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- STATUS FEEDBACK:
- OVERVOLTAGE CLAMP PROTECTION:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
supply the normal operation drive current IISS
.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
junction
temperature
may
reach
the
overtemperature threshold Tjsh
.
5/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Figure 1: Switching Time Test Circuit for Resistive Load
V
D
R
gen
V
gen
ID
90%
10%
tf
tr
t
td(on)
td(off)
Vgen
t
Figure 2: Test Circuit for Diode Recovery Times
A
A
B
D
I
FAST
DIODE
L=100uH
OMNIFET
S
B
25 Ω
D
S
V
DD
R
gen
I
OMNIFET
V
gen
8.5 Ω
6/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms
R
GEN
V
IN
P
W
Figure 5: Input Charge Test Circuit
GEN
IN
V
ND8003
7/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
1000
Rds(on) (mohms)
180
160
950
Tj=-40ºC
Vin=2.5V
Vin=0V
140
120
900
850
800
750
700
650
Tj=25ºC
100
80
60
40
20
Tj=150ºC
0
2
4
6
8
10
12
14
16
18
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Id (A)
Id(A)
Static Drain-Source On resistance Vs. Input
Voltage
Derating Curve
Rds(on) (mohms)
80
70
Tj=150ºC
60
50
Id=12A
Id=1A
Tj=25ºC
40
30
20
10
Id=12A
Id=1A
Tj=-40ºC
Id=12A
Id=1A
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Gfs (S)
24
Rds(on) (mohms)
80
22
Tj=25ºC
Tj=-40ºC
Vds=13V
70
20
Id=7A
18
16
14
12
10
8
60
Tj=150ºC
Tj=150ºC
50
40
30
6
Tj=25ºC
4
20
Tj= - 40ºC
2
0
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
Id(A)
8/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Static Drain-Source On Resistance Vs. Id
Transfer Characteristics
Rds(on) (mohms)
70
Idon (A)
18
Tj=25ºC
Tj=-40ºC
16
60
Vds=13.5V
14
Vin=5V
Tj=150ºC
50
12
10
40
30
20
10
0
8
6
4
2
0
Tj=150ºC
Tj=25ºC
Tj=-40ºC
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
6
7
8
9
10 11 12 13
2.25
2.75
3.25
3.75
4.25
4.75
5.25
Id(A)
Vin (V)
Turn On Current Slope
Turn On Current Slope
di/dt(A/us)
20
di/dt(A/us)
6
5.5
5
17.5
15
Vin=3.5V
Vdd=15V
Id=7A
Vin=5V
Vdd=15V
Id=7A
4.5
4
12.5
10
3.5
3
2.5
2
7.5
5
1.5
1
2.5
0
0.5
0
0
250 500 750 1000 1250 1500 1750 2000 2250
Rg(ohm)
0
250
500 750 1000 1250 1500 1750 2000 2250
Rg(ohm)
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
dv/dt(V/us)
300
Vin (V)
8
275
7
Vin=5V
250
225
200
175
150
125
100
75
Vds=12V
Id=7A
Vdd=15V
Id=7A
6
5
4
3
2
1
0
50
25
0
0
500
1000
1500
2000
2500
2250
250
750
1250
1750
0
5
10
15
20
25
30
35
40
45
Rg(ohm)
Qg (nC)
9/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Turn Off Drain-Source Voltage Slope
Capacitance Variations
C(pF)
1000
dv/dt(v/us)
300
275
900
800
700
600
500
400
300
200
f=1MHz
Vin=0V
Vin=3.5V
250
Vdd=15V
Id=7A
225
200
175
150
125
100
75
50
25
0
250
750
1250
1750
2250
0
500
1000
1500
2000
0
5
10
15
20
25
30
35
Vds(V)
Rg(ohm)
Switching Time Resistive Load
Switching Time Resistive Load
t(ns)
1750
t(us)
11
tf
10
Vdd=15V
tr
1500
9
8
7
6
5
4
3
2
1
0
Id=7A
Vdd=15V
Id=7A
td(off)
Vin=5V
1250
1000
750
500
250
0
Rg=10ohm
td(off)
td(on)
tr
tf
td(on)
250
750
1250
1750
2250
2000 2500
0
500
1000
1500
3
3.25 3.5 3.75
4
4.25 4.5 4.75
5
5.25
Vin(V)
Rg(ohm)
Normalized On Resistance Vs. Temperature
Output Characteristics
Id (A)
Rds(on) (mOhm)
4
18
17
16
15
14
13
12
11
10
9
Vin=5V
3.5
Vin=4V
Vin=5V
Id=7A
3
Vin=3V
2.5
2
8
7
6
1.5
1
5
4
3
0.5
0
2
1
Vin=2V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-50
-25
0
25
50
75
100
125
150
175
Vds (V)
Tc (ºC)
10/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Normalized Input Threshold Voltage Vs.
Current Limit Vs. Junction Temperature
Temperature
Ilim (A)
Vinth (V)
2
40
35
1.75
Vin=5V
Vds=Vin
Id=1mA
Vds=13V
1.5
30
1.25
25
20
15
10
5
1
0.75
0.5
0.25
0
0
-50
-25
0
25
50
75
100 125 150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Tc (ºC)
Step Response Current Limit
Tdlim(us)
55
52.5
50
Vin=5V
Rg=10ohm
47.5
45
42.5
40
37.5
35
32.5
30
7.5
10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
11/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK Maximum turn off current versus load inductance
LMAX (A)
I
100
A
10
B
C
1
0.01
0.1
1
10
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
12/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK Maximum turn off current versus load inductance
LMAX (A)
I
100
A
B
C
10
1
0.01
0.1
1
10
100
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
13/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK THERMAL DATA
DPAK PC Board
Layout condition of R and Z measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
th
th
2
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm ).
Rthj-amb Vs PCB copper area in open box free air condition
RTH j_amb (ºC/W)
90
80
70
60
50
40
30
0
2
4
6
8
10
PCB CU heatsink area (cm^2)
14/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
th
th
2
2
2
Cu thickness=35µm, Copper areas: 0.14cm , 0.6cm , 1.6cm ).
Rthj-amb Vs PCB copper area in open box free air condition
SO-8 at 4 pins connected to TAB
RTHj_amb
(ºC/W)
110
105
100
95
90
85
80
75
70
0
0.5
1
1.5
2
2.5
PCB CU heatsink area (cm^2)
15/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
2
D PAK THERMAL DATA
D2PAK PC Board
Layout condition of R and Z measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
th
th
2
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm ).
Rthj-amb Vs PCB copper area in open box free air condition
RTHj_amb (°C/W)
55
Tj-Tamb=50°C
50
45
40
35
30
0
2
4
6
8
10
PCB Cu heatsink area (cm^2)
16/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
10
1
Footprint
2
6 cm
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Thermal fitting model of an OMNIFET II in
DPAK
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Thermal Parameter
2
Area/island (cm )
R1 (°C/W)
Footprint
0.1
6
24
5
R2 (°C/W)
0.35
1.20
2
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
15
Pd
R6 (°C/W)
61
T_amb
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.0006
0.0021
0.05
0.3
0.45
0.8
17/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
10
1
Footprint
2
6 cm
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Thermal fitting model of an OMNIFET II in
D2PAK
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Thermal Parameter
2
Area/island (cm )
R1 (°C/W)
Footprint
6
22
5
0.1
R2 (°C/W)
0.35
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R3 ( °C/W)
R4 (°C/W)
0.3
4
R5 (°C/W)
9
37
Pd
R6 (°C/W)
T_amb
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.0006
2.10E-03
8.00E-02
0.45
2
3
18/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-251 (IPAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
2.2
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
19/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
2
D PAK MECHANICAL DATA
mm.
DIM.
MIN.
4.4
TYP
MAX.
4.6
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
10
10.4
E1
G
8.5
4.88
15
5.28
15.85
1.4
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
V2
0º
8º
P011P6
20/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-252 (DPAK) MECHANICAL DATA
mm.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
TYP
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
B
B2
C
C2
D
D1
5.1
E
6.40
6.60
E1
4.7
e
2.28
G
4.40
9.35
4.60
H
10.10
L2
0.8
L4
0.60
1.00
R
V2
0.2
8°
0°
Package Weight
Gr. 0.29
P032P
21/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-220 MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
TYP.
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.260
3.5
3.93
0.154
0.102
2.6
DIA.
3.75
3.85
0.147
0.151
22/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
F
8 (max.)
23/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
16.90
C
Base Q.ty
50
500
532
6
Bulk Q.ty
Tube length (± 0.5)
12.20
5.08
A
1.60
B
B
21.3
0.6
3.50
C (± 0.1)
9.75
All dimensions
are in millimeters
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
1000
1000
330
1.5
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
13
20.2
24.4
60
G (+ 2 / -0)
N (min)
T (max)
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
24
4
Tape Hole Spacing
Component Spacing
Hole Diameter
16
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
11.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
24/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
6 .7
1 .8
3 .0
1 .6
Base Q.ty
75
3000
532
6
C
Bulk Q.ty
Tube length (± 0.5)
2 .3
2 .3
6 .7
A
B
B
21.3
0.6
C (± 0.1)
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
16
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
7.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
25/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 TUBE SHIPMENT (no suffix)
B
Base Q.ty
100
2000
532
3.2
6
C
A
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
5.5
4.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
26/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-220 TUBE SHIPMENT (no suffix)
A
Base Q.ty
50
1000
532
5.5
Bulk Q.ty
Tube length (± 0.5)
A
B
B
31.4
0.75
C (± 0.1)
All dimensions are in mm.
C
27/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
IPAK TUBE SHIPMENT (no suffix)
A
C
Base Q.ty
75
3000
532
6
Bulk Q.ty
Tube length (± 0.5)
A
B
B
21.3
0.6
C (± 0.1)
All dimensions are in mm.
MECHANICAL POLARIZATION
28/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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29/29
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