VNQ600PTR-E [STMICROELECTRONICS]
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| 型号： | VNQ600PTR-E |
| 厂家： | 
ST |
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VNQ600
®
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ600
R
(*)
I
V
CC
DS(on)
lim
35mΩ
25A
36 V
(*) Per each channel
■ DC SHORT CIRCUIT CURRENT: 25A
■ CMOS COMPATIBLE INPUTS
■ PROPORTIONAL LOAD CURRENT SENSE
■ UNDERVOLTAGE & OVERVOLTAGE
SHUT-DOWN
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600
VNQ60013TR
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT-DOWN
■ CURRENT LIMITATION
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600 is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF VCC
■ REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600 is
a quad HSD formed by
assembling two VND600 chips in the same SO-28
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
41
Unit
V
V
Supply voltage (continuous)
CC
-V
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
-0.3
15
V
CC
I
A
OUT
I
-15
A
R
I
+/- 10
-3
mA
V
IN
V
Current sense maximum voltage
CSENSE
+15
-200
V
I
Ground current at T
< 25°C (continuous)
mA
GND
pins
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
2000
5000
5000
V
V
V
V
V
- CURRENT SENSE
- OUTPUT
ESD
- V
CC
Maximum Switching Energy
(L=0.11mH; R =0Ω; V =13.5V; T
E
126
mJ
MAX
=150ºC; I =40A)
L
bat
jstart
L
P
Power dissipation (per island) at T
Junction operating temperature
Storage temperature
=25°C
lead
6.25
W
°C
°C
tot
T
Internally Limited
-55 to 150
j
T
stg
(**) See application schematic at page 9.
June 2003
1/18
VNQ600
BLOCK DIAGRAM
V
1,2
CC
OVERVOLTAGE
UNDERVOLTAGE
DEMAG 1
DRIVER 1
OUTPUT 1
INPUT 1
I
LIM1
LOGIC
I
OUT1
CURRENT
SENSE 1
K
INPUT 2
GND 1,2
DEMAG 2
DRIVER 2
OUTPUT 2
I
LIM2
OVERTEMP. 1
OVERTEMP. 2
I
OUT2
CURRENT
SENSE 2
K
V
3,4
OVERVOLTAGE
UNDERVOLTAGE
CC
DEMAG 3
DRIVER 3
OUTPUT 3
INPUT 3
I
LIM3
LOGIC
I
OUT3
CURRENT
SENSE 3
K
INPUT 4
GND 3,4
DEMAG 4
DRIVER 4
OUTPUT 4
I
LIM4
OVERTEMP. 3
OVERTEMP. 4
I
OUT4
CURRENT
SENSE 4
K
2/18
VNQ600
CURRENT AND VOLTAGE CONVENTIONS
I
S1,2
V
I
CC1,2
S3,4
V
V
CC3,4
CC1,2
I
IN1
V
CC3,4
INPUT1
I
OUT1
I
V
SENSE1
IN1
OUTPUT1
OUTPUT2
OUTPUT3
CUR. SENSE1
INPUT2
I
V
IN2
SENSE1
I
OUT2
V
OUT1
I
V
SENSE2
IN2
CUR. SENSE2
V
I
OUT2
V
IN3
SENSE2
I
I
OUT3
INPUT3
I
SENSE3
V
IN3
V
CUR. SENSE3
INPUT4
OUT3
I
I
OUT4
IN4
V
SENSE3
OUTPUT4
SENSE4
V
IN4
V
OUT4
CUR. SENSE4
V
SENSE4
GND
GND
3,4
1,2
I
I
GND1,2
GND3,4
CONNECTION DIAGRAM (TOP VIEW)
V
1,2
1
28
CC
V
1,2
CC
GND 1,2
OUTPUT 2
OUTPUT 2
OUTPUT 2
INPUT2
INPUT1
CURRENT SENSE 1
CURRENT SENSE 2
OUTPUT 1
OUTPUT 1
OUTPUT 1
V
V
1,2
3,4
CC
OUTPUT 4
OUTPUT 4
OUTPUT 4
OUTPUT 3
CC
GND 3,4
INPUT4
INPUT3
CURRENT SENSE 3
CURRENT SENSE 4
OUTPUT 3
OUTPUT 3
V
3,4
V
3,4
14
15
CC
CC
3/18
VNQ600
THERMAL DATA (Per island)
Symbol
Parameter
Thermal resistance Junction-lead
Value
20
Unit
°C/W
°C/W
°C/W
R
R
R
thj-lead
thj-amb
thj-amb
Thermal resistance Junction-ambient (one chip ON)
Thermal Resistance Junction-ambient (two chips ON)
60 (*)
46 (*)
2
(*) When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35µm thick) connected to all V pins.
CC
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified)
(Per each channel)
POWER
Symbol
Parameter
Test Conditions
Min
5.5
3
Typ
13
4
Max
36
5.5
Unit
V
V
V
(**)
(**)
(**)
Operating supply voltage
Undervoltage shut-down
Overvoltage shut-down
CC
V
USD
V
36
V
OV
I
1,2,3,4=5A; T =25°C
35
70
mΩ
OUT
j
R
On state resistance
Clamp Voltage
I
1,2,3,4=5A; T =150°C
mΩ
ON
OUT
j
I
1,2,3,4=3A; VCC=6V
=20mA (see note 1)
120
55
40
mΩ
V
µA
OUT
V
I
41
48
12
clamp
CC
Off State; V =13V; V =V
=0V
CC
IN
OUT
Off State; V =13V; V =V
=0V;
CC
IN
OUT
I (**)
Supply current
12
25
µA
T =25°C
S
j
On State; V =13V; V =5V;
CC
IN
I
=0A; R
=3.9KΩ
6
50
0
5
3
mA
µA
µA
µA
µA
OUT
SENSE
I
I
I
I
Off state output current
Off State Output Current
Off State Output Current
Off State Output Current
V =V =0V
OUT
V =0V; V
V =V
V =V
0
-75
L(off1)
L(off2)
L(off3)
L(off4)
IN
=3.5V
IN
OUT
=0V; Vcc=13V; T =125°C
=0V; Vcc=13V; T =25°C
IN
OUT
OUT
j
IN
j
SWITCHING (VCC=13V)
Symbol
Parameter
Turn-on delay time
Turn-off delay time
Test Conditions
R =2.6Ω channels 1,2,3,4 (see fig. 1)
Min
Typ
40
40
Max
Unit
µs
µs
t
t
d(on)
d(off)
L
R =2.6Ω channels 1,2,3,4 (see fig. 1)
L
See
(dV
(dV
/dt)
Turn-on voltage slope
Turn-off voltage slope
R =2.6Ω channels 1,2,3,4 (see fig. 1)
relative
diagram
See
relative
diagram
V/µs
V/µs
OUT
OUT
on
off
L
/dt)
R =2.6Ω channels 1,2,3,4 (see fig. 1)
L
PROTECTIONS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
=13V
25
40
70
A
CC
I
DC Short circuit current
lim
5.5V<V <36V
70
A
CC
Thermal shut-down
T
150
175
15
200
°C
TSD
temperature
Thermal reset temperature
Thermal hysteresis
Turn-off output voltage clamp I
Output voltage drop limitation I
T
T
135
7
°C
°C
V
R
hyst
V
=2A; L=6mH
V
-41 V -48 V -55
CC CC CC
demag
OUT
OUT
V
=0.5A; T= -40°C...+150°C
50
mV
ON
j
(**) Per island
4/18
1
VNQ600
CURRENT SENSE (9V< V < 16V) (See Fig. 3)
CC
Symbol
Parameter
Test Conditions
=0.35A; V =0.5V;
Min
Typ
Max
Unit
I
OUT1,2
SENSE
K
I
/I
3300
4350
6000
1
OUT SENSE
T= -40°C...+150°C
j
I
or I
=0.5A;
OUT1
OUT2
dK /K
Current Sense Ratio Drift
V =0.5V; other channels
-10
+10
%
%
1
1
2
SENSE
open; T= -40°C...150°C
j
I
=2A; V
=2.5V; T =-40°C 3900
4850
4850
6000
5800
OUT
SENSE
j
K
I
/I
2
OUT SENSE
T = 25°C...+150°C
4150
j
I
or I
=5A; V
=4V;
OUT1
OUT2
SENSE
other channels open;
dK /K
Current Sense Ratio Drift
-6
+6
2
T =-40°C...150°C
j
I
=4A; V
=4V; T =-40°C
4150
4400
4900
4900
6000
5750
OUT
SENSE
j
K
I
/I
3
OUT SENSE
T = 25°C...+150°C
j
I
or I
=15A; V
=4V;
OUT1
OUT2
SENSE
other channels open;
dK /K
Current Sense Ratio Drift
-6
+6
%
V
3
3
T =-40°C...150°C
j
V
=5.5V; I
=2A;
OUT1,2
CC
2
4
R
=10KΩ
SENSE
Max analog sense output
voltage
V
SENSE1,2
V
>8V; I
=4A;
OUT1,2
CC
V
V
R
=10KΩ
SENSE
Analog sense output voltage in
overtemperature condition
V
V
=13V; R =3.9KΩ
SENSE
5
SENSEH
CC
Analog Sense Output
Impedance in
Overtemperature Condition
V
open
=13V; T >T
; All channels
TSD
CC
j
R
t
400
Ω
VSENSEH
Current sense delay response to 90% I
(see note 2)
500
µs
DSENSE
SENSE
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
V
Low level input voltage
High level input voltage
Input hysteresis voltage
1.25
IL
V
3.25
0.5
1
V
IH
V
V
I(hyst)
I
Input current
Input current
V =1.5V
µA
µA
V
IL
IN
I
V =3.5V
10
8
IN
IN
I =1mA
6
6.8
IN
V
Input clamp voltage
ICL
I = -1mA
-0.7
V
IN
Note 1: V
and V are correlated. Typical difference is 5V.
OV
clamp
Note 2: current sense signal delay after positive input slope.
Note: Sense pin doesn’t have to be left floating.
5/18
2
VNQ600
TRUTH TABLE (per channel)
CONDITIONS
INPUT
OUTPUT
SENSE
L
H
L
L
H
L
L
L
L
L
L
L
L
L
H
H
0
Normal operation
Overtemperature
Undervoltage
Nominal
0
H
L
V
SENSEH
0
H
L
0
0
0
0
Overvoltage
H
L
Short circuit to GND
H
H
L
(T <T
) 0
) V
0
j
TSD
TSD
(T >T
j
SENSEH
Short circuit to V
CC
H
< Nominal
Negative output voltage
clamp
L
L
0
6/18
VNQ600
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R
Test Levels
I
Test Levels
II
Test Levels
III
Test Levels
IV
Test Levels
7637/1
Delays and Impedance
Test Pulse
1
2
-25V
+25V
-25V
-50V
+50V
-50V
-75V
+75V
-100V
+75V
-6V
-100V
+100V
-150V
+100V
-7V
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
3a
3b
4
+25V
-4V
+50V
-5V
5
+26.5V
+46.5V
+66.5V
+86.5V
ISO T/R
Test Levels Result
I
Test Levels Result
II
Test Levels Result
III
Test Levels Result
IV
7637/1
Test Pulse
1
2
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
E
C
C
C
C
C
E
3a
3b
4
5
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
E
Figure 1: Switching Characteristics (Resistive load RL=2.6Ω)
VOUT
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
tf
tr
t
ISENSE
90%
t
t
DSENSE
INPUT
td(on)
td(off)
t
7/18
1
VNQ600
Figure 2: Waveforms (per each chip)
NORMAL OPERATION
INPUT
n
LOAD CURRENT
n
SENSE
n
UNDERVOLTAGE
V
CC
V
USDhyst
V
USD
INPUT
n
LOAD CURRENT
n
SENSE
n
OVERVOLTAGE
V
OV
V
CC
V
> V
OV
V
< V
OV
CC
CC
INPUT
n
LOAD CURRENT
n
SENSE
n
SHORT TO GROUND
INPUT
n
LOAD CURRENT
n
LOAD VOLTAGE
n
SENSE
n
SHORT TO V
CC
INPUT
n
LOAD VOLTAGE
n
LOAD CURRENT
n
SENSE
n
<Nominal
<Nominal
OVERTEMPERATURE
T
TSD
T
j
T
R
INPUT
n
LOAD CURRENT
n
V
R
SENSEH
SENSE
I
=
SENSE
n
SENSE
8/18
VNQ600
APPLICATION SCHEMATIC
+5V
R
prot
INPUT1
V
CC1,2
V
CC3,4
D
ld
R
OUTPUT1
OUTPUT2
prot
C. SENSE 1
INPUT2
R
prot
µC
R
prot
C. SENSE 2
R
prot
INPUT3
OUTPUT3
OUTPUT4
R
prot
C. SENSE 3
INPUT4
R
prot
R
prot
C. SENSE 4
GND3,4
GND1,2
R
GND
R
SENSE1,2,3,4
D
GND
V
GND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
and the status output values. This shift will vary
depending on how many devices are ON in the case of
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
several high side drivers sharing the same R
.
GND
Solution 1: Resistor in the ground line (R
can be used with any type of load.
only). This
GND
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
The following is an indication on how to dimension the
R
resistor.
GND
1) R
Solution 2: A diode (D
) in the ground line.
GND
≤ 600mV / 2(I
).
S(on)max
GND
A resistor (R
GND
=1kΩ) should be inserted in parallel to
GND
2) R
≥ (−V ) / (-I
)
GND
CC
GND
D
if the device will be driving an inductive load.
where -I
is the DC reverse ground pin current and can
GND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift ( 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
(when V <0: during reverse
CC
GND
battery situations) is:
2
P = (-V ) /R
D
CC
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
LOAD DUMP PROTECTION
calculated with formula (1) where I
becomes the
S(on)max
D
is necessary (Voltage Transient Suppressor) if the
ld
sum of the maximum on-state currents of the different
devices.
load dump peak voltage exceeds V max DC rating. The
CC
same applies if the device will be subject to transients on
Please note that if the microprocessor ground is not
the V
line that are greater than the ones shown in the
CC
common with the device ground then the R
will
ISO T/R 7637/1 table.
GND
produce a shift (I
* R
) in the input thresholds
S(on)max
GND
9/18
VNQ600
Calculation example:
For V = - 100V and I
µC I/Os PROTECTION:
≥ 20mA; V ≥ 4.5V
OHµC
If a ground protection network is used and negative
CCpeak
latchup
transients are present on the V line, the control pins will
5kΩ ≤ R
≤ 65kΩ.
CC
prot
be pulled negative. ST suggests to insert a resistor (R
)
prot
Recommended R
value is 10kΩ.
prot
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
-V
/I
≤ R
≤ (V
-V -V
) / I
CCpeak latchup
prot
OHµC IH GND IHmax
Figure 3: I
/I
versus I
OUT SENSE
OUT
I
/I
OUT SENSE
6500
6000
5500
5000
4500
4000
3500
3000
max.Tj=-40°C
max.Tj=25...150°C
min.Tj=25...150°C
typical value
min.Tj=-40°C
0
2
4
6
8
10
12
14
16
I
(A)
OUT
10/18
VNQ600
High Level Input Current
Off State Output Current
IL(off1) (uA)
Iih (uA)
5
5
4.5
4.5
Off state
Vcc=36V
Vin=3.25V
4
4
Vin=Vout=0V
3.5
3.5
3
3
2.5
2
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Input Clamp Voltage
Input High Level
Vih (V)
Vicl (V)
3.6
8
7.8
3.4
3.2
3
Iin=1mA
7.6
7.4
7.2
7
2.8
2.6
2.4
2.2
2
6.8
6.6
6.4
6.2
6
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Input Low Level
Input Hysteresis Voltage
Vil (V)
Vhyst (V)
1.5
2.6
1.4
1.3
1.2
1.1
1
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
11/18
VNQ600
ILIM Vs Tcase
Overvoltage Shutdown
Vov (V)
Ilim (A)
50
80
48
46
44
42
40
38
36
34
32
30
70
Vcc=13V
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Turn-on Voltage Slope
Turn-off Voltage Slope
dVout/dt(on) (V/ms)
dVout/dt(off) (V/ms)
750
500
700
450
Vcc=13V
Rl=2.6Ohm
Vcc=13V
Rl=2.6Ohm
650
400
600
350
550
500
450
400
350
300
250
300
250
200
150
100
50
0
-50
-25
0
25
50
75
100 125
150
175
-50
-25
0
25
50
75
100 125
150
175
Tc (ºC)
Tc (ºC)
On State Resistance Vs Tcase
On State Resistance Vs VCC
Ron (mOhm)
Ron (mOhm)
80
100
90
70
Iout=5A
Vcc=8V & 36V
80
Iout=5A
Tc= 150°C
60
70
50
40
30
20
10
0
60
50
40
30
20
10
0
Tc= 25°C
Tc= - 40°C
-75 -50 -25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
Tc (°C)
Vcc (V)
12/18
VNQ600
Maximum turn off current versus load inductance
LMAX (A)
I
100
10
1
A
B
C
0.001
0.01
0.1
1
10
100
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
13/18
VNQ600
SO-28 DOUBLE ISLAND THERMAL DATA
SO-28 Double island PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
th
th
2
2
2
Cu thickness=35µm, Copper areas: 0.5cm , 3cm , 6cm ).
Thermal calculation according to the PCB heatsink area
Chip 1 Chip 2
T
T
Note
jchip1
jchip2
ON
OFF
ON
OFF
ON
ON
ON
R
R
R
x P
x P
+ T
+ T
R
R
R
x P
x P
+ T
+ T
thA
thC
thB
dchip1
amb
thC
thA
thB
dchip1
amb
dchip2
amb
dchip2
amb
x (P
+ P
) + T
x (P
+ P
) + T
P
P
=P
dchip1 dchip2
dchip1
dchip1
dchip2
amb
dchip1
dchip2
dchip2
amb
ON
(R x P
) + R
x P
+ T
(R x P
) + R x P
+ T
≠P
dchip1 dchip2
thA
thC
dchip2
amb
thA
thC
dchip1
amb
R
R
R
= Thermal resistance Junction to Ambient with one chip ON
= Thermal resistance Junction to Ambient with both chips ON and P
= Mutual thermal resistance
thA
thB
thC
=P
dchip2
dchip1
Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_am b
(°C/W)
70
60
50
40
30
20
10
RthA
RthB
RthC
0
1
2
3
4
5
6
7
PCB Cu heatsink area (cm^2)/island
14/18
VNQ600
SO-28 Thermal Impedance Junction Ambient Single Pulse
Zth(°C/W)
100
0,5 cm ^2/island
3 cm ^2/island
6 cm ^2/island
10
One channel ON
Two channels
ON on same chip
1
0.1
0.01
0.0001
0.001
0.01
0.1
time(s)
1
10
100
1000
Thermal fitting model of a four channels HSD
in SO-28
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Tj_1
C1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
Thermal Parameter
R1
Pd1
2
Area/island (cm )
R1=R7=R13=R15 (°C/W)
R2=R8=R14=R16 (°C/W)
R3=R9 (°C/W)
0.5
0.05
0.3
3.4
11
6
C13
R13
C14
Tj_2
R14
Pd2
R17
R18
R4=R10 (°C/W)
R5=R11 (°C/W)
15
Tj_3
C7
R7
C8
C9
R9
C10
C11
C12
R6=R12 (°C/W)
30
13
Pd3
R8
R10
R11
R12
C1=C7=C13=C15 (W.s/°C)
C2=C8=C14=C16 (W.s/°C)
C3=C9 (W.s/°C)
0.001
5.00E-03
1.00E-02
0.2
C15
R15
C16
Tj_4
R16
Pd4
C4=C10 (W.s/°C)
C5=C11 (W.s/°C)
1.5
T_amb
C6=C12 (W.s/°C)
5
8
R17=R18 (°C/W)
150
15/18
VNQ600
SO-28 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
2.65
0.30
0.49
0.32
MIN.
MAX.
0.104
0.012
0.019
0.012
A
a1
b
0.10
0.35
0.23
0.004
0.013
0.009
b1
C
0.50
0.020
c1
D
45 (typ.)
17.7
18.1
0.697
0.393
0.713
0.419
E
10.00
10.65
e
1.27
0.050
0.650
e3
F
16.51
7.40
0.40
7.60
1.27
0.291
0.016
0.299
0.050
L
S
8 (max.)
16/18
2
VNQ600
SO-28 TUBE SHIPMENT (no suffix)
Base Q.ty
28
700
532
3.5
Bulk Q.ty
Tube length (± 0.5)
C
B
A
B
13.8
0.6
C (± 0.1)
All dimensions are in mm.
A
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
1000
1000
330
1.5
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
W
P0 (± 0.1)
P
16
4
Tape Hole Spacing
Component Spacing
Hole Diameter
12
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
7.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
17/18
VNQ600
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of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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18/18
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