W80NF06 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET; N沟道60V - 0.0065OHM - 80A TO- 220 / D2PAK / TO- 247的STripFET II功率MOSFET
| 型号： | W80NF06 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET |
| 文件： | 总14页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP80NF06 - STB80NF06
STW80NF06
N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247
STripFET II™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB80NF06
STP80NF06
STW80NF06
60V
60V
60V
<0.010Ω
<0.010Ω
<0.010Ω
80A
80A
80A
3
2
TO-220 1
TO-247
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low threshold drive
3
1
D²PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB80NF06T4
STP80NF06
STW80NF06
B80NF06
P80NF06
W80NF06
D²PAK
TO-220
TO-247
Tape & reel
Tube
Tube
September 2006
Rev 3
1/14
www.st.com
14
Contents
STP80NF06 - STB80NF06 - STW80NF06
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STP80NF06 - STB80NF06 - STW80NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (vgs = 0)
Gate- source voltage
60
20
V
V
(1)
ID
Drain current (continuos) at TC = 25°C
Drain current (continuos) at TC = 100°C
Drain current (pulsed)
80
A
ID
80
A
(2)
IDM
320
300
2
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
mJ
(3)
EAS
Single pulse avalanche energy
Storage temperature
870
Tstg
Tj
– 65 to 175
175
°C
Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj= 25°C, ID= 40A, VDD=40V
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case Max
Rthj-a Thermal resistance junction-ambient Max
0.5
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
3/14
Electrical characteristics
STP80NF06 - STB80NF06 - STW80NF06
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
VDS = Max rating
60
V
Breakdown voltage
1
µA
µA
Zero gate voltage
IDSS
VDS=Max rating,
TC=125°C
Drain current (VGS = 0)
10
Gate-body leakage
current (VDS = 0)
IGSS
V
GS = 20V
100
4
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40A
2
3
Static drain-source on
resistance
RDS(on)
0.0065 0.010
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
(1)
gfs
Forward transconductance
Input capacitance
VDS = 2.5V ID=18A
20
S
,
Ciss
3850
800
pF
pF
Coss
Output capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
Reverse transfer
capacitance
Crss
250
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
115
24
150
nC
nC
nC
VDD = 80V, ID = 80A,
VGS = 10V
46
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 5.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max. Unit
VDD = 27V, ID = 40A
td(on)
tr
Turn-on delay time
Rise time
25
85
ns
ns
R
G = 4.7Ω VGS = 10V
(see Figure 13)
DD = 27V, ID = 40A,
V
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
70
25
RG = 4.7Ω, VGS = 10V
(see Figure 13)
td(off)
Off-voltage Rise Time
Fall Time
85
75
ns
ns
ns
Vclamp =44V, ID =80A
RG = 4.7Ω, VGS = 10V
(see Figure 15)
tf
tc
Cross-over Time
110
4/14
STP80NF06 - STB80NF06 - STW80NF06
Electrical characteristics
Min Typ. Max Unit
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
80
320
1.5
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
(2)
VSD
ISD = 80A, VGS = 0
ISD = 80A, VDD = 50V
di/dt = 100A/µs,
Tj = 150°C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
80
250
6.4
ns
nC
A
Qrr
IRRM
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
STP80NF06 - STB80NF06 - STW80NF06
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/14
STP80NF06 - STB80NF06 - STW80NF06
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized breakdown voltage vs tj
7/14
Test circuit
STP80NF06 - STB80NF06 - STW80NF06
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/14
STP80NF06 - STB80NF06 - STW80NF06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/14
Package mechanical data
STP80NF06 - STB80NF06 - STW80NF06
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/14
STP80NF06 - STB80NF06 - STW80NF06
Package mechanical data
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
4.4
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
11/14
Package mechanical data
STP80NF06 - STB80NF06 - STW80NF06
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/14
STP80NF06 - STB80NF06 - STW80NF06
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
09-Sep-2004
21-Jun-2005
17-Aug-2006
1
2
3
Complete version
The word "STripFET" in the description title on the web was been
corrected
New template, no content change
13/14
STP80NF06 - STB80NF06 - STW80NF06
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
相关型号：
W80NF55-08
N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET™ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明