10N60 [SUNMATE]

N-CHANNEL POWER MOSFET;
10N60
型号: 10N60
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

N-CHANNEL POWER MOSFET

文件: 总8页 (文件大小:2728K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10N60 Series  
N-CHANNEL POWER MOSFET  
Features  
Pin Definition:  
R
<0.9@ V =10V  
DS(ON) GS  
Fast switching capability  
1. Gate  
2. Drain  
3. Source  
Low gate charge  
Lead free in compliance with EU RoHS directive.  
Green molding compound  
Mechanical Data  
Case: TO-220,ITO-220,TO-262,TO-263 Package  
Block Diagram  
D
Ordering Information  
Package  
Part No.  
10N60T  
10N60F  
10N60K  
10N60G  
Packing  
TO-220  
ITO-220  
TO-262  
TO-263  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
G
S
TA = 25C unless otherwise specified  
Maximum Ratings  
PARAMETER  
SYMBOL  
RATINGS  
600  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
±30  
V
10  
A
A
ID  
Continuous Drain Current  
IDM  
38  
Pulsed Drain Current (Note 2)  
Single Pulsed (Note 3)  
700  
156  
50  
Avalanche Energy  
Power Dissipation  
EAS  
mJ  
W
TO-220/TO-262/TO-263  
PD  
ITO-220  
W
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L = 30mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATING  
62.5  
UNIT  
°C/W  
TO-220/ITO-220  
TO-262/TO-263  
Junction to Ambient  
Junction to Case  
TO-220  
0.85  
θJC  
°C/W  
ITO-220  
2.6  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
OFF CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
VGS=0V, ID=250μA  
MIN TYP MAX UNIT  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
600  
V
1
µA  
Drain-Source Leakage Current  
Gate- Source Leakage Current  
VDS=600V, VGS=0V  
Forward  
Reverse  
V
G=30V, VDS=0V  
100 nA  
-100 nA  
IGSS  
VGS=-30V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
VGS=10V, ID=5A  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.76 0.9  
CISS  
COSS  
CRSS  
1570  
166  
18  
pF  
pF  
pF  
Output Capacitance  
VDS=25V, VGS=0V, f=1.0 MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
23  
69  
ns  
ns  
VDD =300V, ID =10A,  
RG =25(Note 1, 2)  
Turn-On Rise Time  
Turn-Off Delay Time  
144  
77  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
QG  
nC  
nC  
nC  
44  
VDS=480V, ID=10A,  
VGS=10V (Note 1, 2)  
Gate-Source Charge  
QGS  
QGD  
6.7  
18.5  
Gate-Drain Charge  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
VGS=0 V, IS =10A  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
1.4  
V
A
IS  
10  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
40  
A
Reverse Recovery Time  
trr  
450  
ns  
VGS=0V, IS=10A,  
dIF/dt =100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
4.2  
μC  
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.  
2. Essentially independent of operating temperature.  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
*
SD controlled by pulse period  
Same Type  
as D.U.T.  
VGS  
* D.U.T.-D vice Under Test  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
TEST CIRCUITS AND WAVEFORMS(Cont.)  
VDS  
90%  
10%  
VGS  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
TYPICAL CHARACTERISTICS  
TYPICAL CHARACTERISTICS  
Transient Thermal Response Curve  
100  
D=0.5  
0.2  
NOTES:  
1.ZθJC(t)=2.5D/W Max  
2.Duty Factor,D=t1/t2  
3.TJW-TC=PDW-ZθJC(t)  
10-1  
0.1  
0.05  
0.02  
0.01  
PDW  
Single pulse  
t1  
t2  
10-2  
10-5  
10-4  
10-3  
10-2  
100  
101  
10-1  
Square Wave Pulse Duration, t1 (sec)  
TO-220 Mechanical Drawing  
ITO-220 Mechanical Drawing  
TO-262 Mechanical Drawing  
TO-263 Mechanical Drawing  

相关型号:

10N60-A-TA3-T

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
UTC

10N60-B-TA3-T

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
UTC

10N60C5M

CoolMOS Power MOSFET
IXYS

10N60F

N-CHANNEL POWER MOSFET
SUNMATE

10N60G

N-CHANNEL POWER MOSFET
SUNMATE

10N60G-T2Q-T

N-CHANNEL POWER MOSFET
UTC

10N60G-TA3-T

10A, 600V N-CHANNEL POWER MOSFET
UTC

10N60G-TF1-T

10A, 600V N-CHANNEL POWER MOSFET
UTC

10N60G-TF2-T

10A, 600V N-CHANNEL POWER MOSFET
UTC

10N60G-TF3-T

10A, 600V N-CHANNEL POWER MOSFET
UTC

10N60G-TF3T-T

N-CHANNEL POWER MOSFET
UTC

10N60G-TQ2-R

10A, 600V N-CHANNEL POWER MOSFET
UTC