SBYV26E [SUNMATE]
1A plug-in fast recovery diode 1000V DO-41 series;
| 型号： | SBYV26E |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A plug-in fast recovery diode 1000V DO-41 series 二极管 光电二极管 |
| 文件： | 总2页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBYV26A- SBYV26E
SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.0 A
Features
Glass passivated
!
High maximum operating temperature
Low leakage current
!
!
A
B
A
Excellent stability
!
!
Guaranteed avalanche energy
absorption capability
C
D
Mechanical Data
!
!
Case: D O - 4 1 Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
DO-41
Min
Dim
A
Max
!
!
!
!
25.40
4.06
¾
B
5.21
0.864
2.72
C
0.71
Marking: Type Number
D
2.00
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
SBYV26A SBYV26B SBYV26C SBYV26D SBYV26E
Unit
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
VRRM
VRMS
VDC
MaximumDC blocking voltage
1000
Maximumaverage forw ard rectified current
1.0
A
IF(AV)
9.5 mmlead length,
@TA=75
Peak forward surge current
10ms single half-sine-wave
30.0
2.5
A
V
IFSM
superimposed on rated load @T =125
J
Maximuminstantaneous forw ard voltage
@ 1.0A
VF
IR
Maximumreverse current
@TA=25
5.0
A
at rated DCblocking voltage @TA=100
Maximumreverse recovery time (Note1)
150.0
30
75
ns
trr
CJ
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
45
40
pF
100
/W
RθJA
TJ
Operating junction temperature range
Storage temperature range
- 55 ----- + 150
- 55 ----- + 150
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2
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FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
1.0
2.0
1.0
0.8
0.6
0.4
0.1
S ingle P ha se
H a lf W a ve 5 0H Z
R e sistive or
Ind uctive L oa d
0.2
0
TJ =25
Pulse W idth=300µ s
0 .3 75 "(9.5 m m )Le ad L en gth
0.01
3 .0
4 .0
0
1 .0
2 .0
0
2 5
50
7 5
1 0 0
1 2 5 1 5 0
1 7 5
AMBIENTTEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --PEAK FORWARD SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
50
40
30
20
10
40
20
TJ=25
10
f=1.0MHZ
4
2
1
10ms Single Half
Sine-Wave
0
0.1 0.2 0.4
2
10
20 40
1
4
100
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 50Hz
2 of 2
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