STC2907A [SUNTAC]
PNP Silicon Transistor; PNP硅晶体管
| 型号： | STC2907A |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | PNP Silicon Transistor |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC2907A
PNP Silicon Transistor
General Purpose Transistor
= 60V
•
Collector-Emitter Voltage: V
CEO
Collector Power Dissipation: P (max)=625mW
•
C
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
-60
Units
V
V
V
V
I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
-60
V
CEO
EBO
-5
V
-600
625
mA
mW
°C
C
P
T
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
150
J
T
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-60
-60
-5
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
I = -10µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I
* Collector Emitter Breakdown Voltage I = -10mA, I =0
C B
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
I = -10µA, I =0
V
E
C
V
= -50V, I =0
E
-10
nA
CBO
CB
h
I = -0.1mA, V = -10V
C
75
100
100
100
50
FE
CE
= -10V, I = -1mA,
V
CE
CE
CE
CE
C
= -10V , I = -10mA
V
V
V
C
= -10V, *I = -150mA
300
C
= -10V, *I = -500mA
C
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
I = -150mA, I = -15mA
-0.4
-1.6
V
V
CE
C
B
I = -500mA, I = -50mA
C
B
V
I = -150mA, I = -15mA
-1.3
-2.6
V
V
BE
C
B
I = -500mA, I = -50mA
C
B
C
V
= -10V, I =0
E
8
pF
MHz
ns
ob
CB
f=1MHz
f
* Current Gain Bandwidth Product
Turn On Time
I = -50mA, V = -20V
CE
200
T
C
f=100MHz
t
V
I
= -30V, I = -150mA
C
= -15mA
45
ON
CC
B1
t
Turn Off Time
V
I
= -6V, I = -150mA
CC C
=I = -15mA
100
ns
OFF
B1 B2
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Typical Characteristics
STC2907A
1000
-10
VCE = -10V
IC = 10 IB
VBE(sat)
-1
100
-0.1
VCE(sat)
10
-0.01
-1
-10
-100
-1000
-1
-10
-100
-1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
1000
IE = 0
f = 1MHz
VCE = -20V
100
10
0.1
-1
-10
-100
-1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
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