TN0104N3 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN0104N3 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN0104
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
VGS(th)
ID(ON)
(min)
BVDGS
40V
(max)
(max)
TO-92
TN0104N3
—
TO-243AA*
—
Die†
TN0104ND
—
1.8Ω
2.0Ω
1.6V
1.6V
2.0A
2.0A
40V
TN0104N8
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
† MIL visual screening available
7
Product marking for TO-243AA:
Features
TN1L*
Where *=2-week alpha date code
Low threshold —1.6V max.
High input impedance
Low input capacitance
Fast switching speeds
Low Threshold DMOS Technology
Low on resistance
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Package Options
Analog switches
General purpose line drivers
Telecom switches
D
G
Absolute Maximum Ratings
D
S
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
± 20V
TO-243AA
S G D
(SOT-89)
TO-92
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.
7-31
TN0104
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
TO-243AA
0.80A
1.40A
2.40A
2.90A
1.0W
125
15
170
78†
0.80A
1.40A
2.40A
2.90A
1.6W†
* ID (continuous) is limited by max rated Tj.
† TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source
Breakdown Voltage
V
VGS= 0V, ID = 1.0mA
40
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
0.6
1.6
-5.0
100
1
V
mV/°C
nA
VGS = VDS, ID = 500µA
VGS = VDS, ID = 1.0mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
-3.8
0.1
IDSS
Zero Gate Voltage Drain Current
µA
VGS =0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
100
µA
ID(ON)
ON-State Drain Current
0.35
1.1
2.6
5.0
2.3
1.5
VGS = 3V, VDS = 20V
VGS = 5V, VDS = 20V
VGS = 10V, VDS = 20V
VGS = 3V, ID = 50mA
VGS = 5V, ID = 250mA
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A
VGS =10V, ID = 1A,
VDS = 20V, ID = 0.5A
0.5
2.0
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
All Packages
2.5
1.8
2.0
1.0
Ω
TO-92
TO-243AA
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.7
%/°C
Ω
0.34
0.45
CISS
COSS
CRSS
td(ON)
tr
70
50
VGS = 0V, VDS = 20V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
15
3.0
7.0
6.0
5.0
1.2
5.0
8.0
9.0
8.0
1.8
2.0
Rise Time
VDD = 20V, ID = 1A
R
GEN = 25Ω
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
VSD
Diode Forward
TO-92
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 1A
V
TO-243AA
Voltage Drop
trr
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-32
TN0104
Typical Performance Curves
Output Characteristics
Saturation Characteristics
3.75
3.75
3.0
2.25
1.5
0.75
0
3.0
V
= 10V
GS
V
= 10V
2.25
1.5
0.75
0
GS
8V
6V
8V
6V
4V
2V
4V
2V
0
2
4
6
8
10
0
10
20
30
40
50
7
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.75
0.60
0.45
0.30
0.15
0
5
4
3
2
V
= 25V
DS
T
= -55°C
= 25°C
A
T
A
T
= 125°C
A
TO-243AA
(T = 25°C)
A
TO-92
1
0
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-243AA
T
= 25°C
A
P
= 1.6W
D
TO-39 (DC)
TO-92 (DC)
TO-243AA (DC)
(T = 25°C)
A
0.1
TO-92
P
T
= 1W
D
C
= 25°C
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
VDS (volts)
tp(seconds)
7-33
TN0104
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.3
10
8
V
= 5V
GS
1.2
1.1
1.0
0.9
0.8
6
V
= 10V
GS
4
2
0
1
-50
0
50
100
150
0
2
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
3.0
2.4
1.8
1.2
0.6
T
= -55°C
A
25
V
= 25V
°C
DS
R
@ 5V, 0.25A
DS(ON)
125°C
V
@ 0.5mA
(th)
0
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
100
10
8
V
= 10V
DS
75
50
55pF
40V
6
CISS
4
COSS
25
0
2
CRSS
50pF
0
0
10
20
30
40
0.5
0.65
0.8
0.95
1.1
1.25
QG (nanocoulombs)
VDS (volts)
7-34
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