TN0640ND [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN0640ND |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN0635
TN0640
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
TO-92
Die†
BVDGS
350V
10Ω
10Ω
1.0A
1.0A
1.8V
1.8V
TN0635N3
TN0635ND
400V
TN0640N3
TN0640ND
† MIL visual screening available
7
Features
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
■
■
■
■
■
■
■
■
Low threshold —1.8V max.
High input impedance
Low input capacitance — 85pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Package Options
Applications
■
■
■
■
■
■
■
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
S G D
TO-92
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
± 20V
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-59
TN0635/TN0640
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
200mA
1.5A
1.0W
125
170
200mA
1.5A
*
ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
400
350
0.6
Typ
Max
Unit
Conditions
BVDSS
TN0640
TN0635
V
VGS = 0V, ID = 100µA
Drain-to-Source
Breakdown Voltage
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
1.8
-4.0
100
10
V
mV/°C
nA
VGS = VDS, ID= 1mA
Change in VGS(th) with Temperature
Gate Body Leakage
-2.5
VGS = VDS, ID= 1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero Gate Voltage Drain Current
µA
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.3
1.0
1.5
1.8
8.0
7.0
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 150mA
A
Ω
RDS(ON)
Static Drain-to-Source
ON-State Resistance
10
10
VGS = 10V, ID = 500mA
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
VGS = 10V, ID = 500mA
VDS = 25V, ID = 100mA
Ω
125
350
85
m
130
75
20
20
15
25
20
1.8
VGS = 0V, VDS = 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
30
pF
10
VDD = 25V,
ID = 1.0A,
Rise Time
ns
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
RGEN = 25Ω
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 200mA
VGS = 0V, ISD = 1.0A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-60
TN0635/TN0640
Typical Performance Curves
Output Characteristics
Saturation Characteristics
2.5
1.25
1.00
0.75
0.50
0.25
0
V
= 10V
GS
V
= 10V
6V
4V
GS
2.0
1.5
1.0
0.5
0
5V
4V
3V
2V
0
2
4
6
8
10
0
0
1
10
20
30
40
50
7
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.5
0.4
0.3
0.2
0.1
0
V
= 25V
DS
1.8
1.4
1.0
0.6
0.2
T
= -55°C
= 25°C
A
T
A
TO-92
T
= 125°C
A
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
0.1
1.0
0.8
0.6
0.4
0.2
0
TO-92 (pulsed)
TO-92 (DC)
TO-92
= 1W
P
T
D
= 25
°C
C
0.01
0.001
T
= 25°C
C
10
100
1000
0.001
0.01
0.1
10
1.0
VDS (volts)
tp(seconds)
7-61
TN0635/TN0640
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
15.0
1.1
V
= 5V
GS
12.0
9.0
V
= 10V
GS
1.0
6.0
3.0
0
0
-50
0
50
100
150
0
-50
0
0.4
0.8
1.2
1.6
2.0
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.0
1.6
1.2
0.8
0.4
0
2.5
2.0
1.5
1.0
T
= -55
°C
A
1.4
1.2
1.0
0.8
0.6
T
= 125°C
RDS(ON)@ 10V, 0.5A
A
V
(th) @ 1mA
T
= 25
°C
A
0.5
0
0
2
4
6
8
10
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
200
150
100
50
10
8
V
= 10V
DS
270 pF
V
= 40V
DS
270 pF
6
CISS
4
2
COSS
CRSS
100 pF
1.0
0
0
0
10
20
30
40
2.0
3.0
4.0
5.0
QG (nanocoulombs)
VDS (volts)
7-62
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