TN2106 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN2106 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN2106
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
Product marking for SOT-23:
N1L❋
BVDSS
/
RDS(ON)
VGS(th)
BVDGS
(max)
(max)
TO-236AB*
TO-92
Die
60V
2.5Ω
2.0V
TN2106K1
TN2106N3
TN2106ND
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Package Options
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
Drain
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
Gate
Source
S G D
BVDGS
TO-92
TO-236AB
± 20V
(SOT-23)
top view
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
7-71
TN2106
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-236AB
TO-92
0.28A
0.30A
0.8A
1.0A
0.36W
0.74W
200
125
350
170
0.28A
0.30A
0.8A
1.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
Typ
Max
Unit
Conditions
60
V
ID = 1mA, VGS = 0V
VGS = VDS, ID = 1mA
ID = 1mA, VGS = VDS
VGS = ±20V, VDS = 0V
0.6
2.0
-5.5
100
1
V
Change in VGS(th) with Temperature
Gate Body Leakage
-3.8
0.1
mV/°C
nA
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
100
µA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.6
A
Ω
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 200mA
RDS(ON)
5.0
2.5
1.0
Static Drain-to-Source
ON-State Resistance
Ω
VGS = 10V, ID = 500mA
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.70
400
35
17
7
%/°C
VGS = 10V, ID = 500mA
VDS = 25V, ID = 500mA
Ω
150
m
50
25
8
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
VGS = 0V, VDS = 25V, f = 1MHz
3
5
VDD = 25V
ID = 0.5A
Rise Time
5
8
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
6
9
RGEN = 25Ω
5
8
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
1.2
400
1.8
V
ISD = 0.5A, VGS = 0V
ISD = 0.5A, VGS = 0V
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-72
TN2106
Typical Performance Curves
Output Characteristics
Saturation Characteristics
2.5
2.5
2.0
1.5
1.0
0.5
0
VGS
=
VGS =
10V
10V
2.0
1.5
1.0
0.5
0
8V
6V
8V
6V
4V
3V
4V
3V
0
2
4
6
8
10
0
10
20
30
40
50
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
0.5
0.4
0.3
0.2
0.1
0
1.0
0.8
0.6
0.4
0.2
0
V
= 25V
DS
TO-92
T
= -55°C
25°C
A
SOT-23
125°C
0.6
0.8
1.0
0
25
50
75
100
125
150
0
0.2
0.4
ID (amperes)
TA (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
0
1.0
0.1
SOT-23 (pulsed)
TO-236AB
T
= 25°C
A
SOT-23 (DC)
P
= 0.36W
D
TO-92
= 25°C
T
C
P
= 1W
D
0.01
T
= 25°C
A
0.001
0.1
1
10
100
0.001
0.01
0.1
1.0
10
VDS (volts)
tp(seconds)
7-73
TN2106
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
8
1.1
V
= 4.5V
GS
V
= 10V
GS
6
1.0
0.9
4
2
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
I
(amperes)
T (°C)
j
D
Transfer Characteristics
= 25V
VGS(th) and RDS(ON
)
Variation with Temperature
1.0
0.8
0.6
0.4
0.2
0
2.0
1.2
V
DS
R
@ 10V, 0.5A
DS(ON)
1.6
T
= -55°C
A
1.0
0.8
0.6
0.4
1.2
0.8
0.4
0
25°C
V
@ 1mA
GS(th)
125°C
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
T (°C)
j
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
100
10
8
V
= 10V
75
50
DS
6
4
V
= 20V
DS
92 pF
CISS
25
0
COSS
2
0
CRSS
38 pF
0.2
0.6
0
10
20
30
40
0
0.4
0.8
1.0
QG (nanocoulombs)
VDS (volts)
7-74
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