VN0660ND [SUPERTEX]
Small Signal Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE;
| 型号： | VN0660ND |
| 厂家： | 
Supertex, Inc |
| 描述： | Small Signal Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE 开关 晶体管 |
| 文件： | 总4页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN0655
VN0660
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
ID(ON)
BVDSS
/
RDS(ON)
(max)
BVDGS
(min)
0.25A
0.25A
TO-92
TO-220
Die†
550V
20Ω
20Ω
VN0655N3
VN0660N3
—
VN0655ND
VN0660ND
600V
VN0660N5
†
MIL visual screening available
Features
■ Free from secondary breakdown
■ Low power drive requirement
■ Ease of paralleling
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
■ Low CISS and fast switching speeds
■ Excellent thermal stability
■ Integral Source-Drain diode
■ High input impedance and high gain
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
■ Motor controls
■ Converters
Package Options
■ Amplifiers
■ Switches
■ Power supply circuits
■ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
G
D
S G D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
TO-92
TO-220
TAB: DRAIN
BVDSS
BVDGS
± 20V
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-179
VN0655/VN0660
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.15A
0.75A
0.5A
1.5A
1W
125
5
170
70
0.15A
0.75A
0.5A
1.5A
TO-220
45W
* I (continuous) is limited by max rated T .
D
j
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
600
550
2
Typ
Max
Unit
Conditions
VGS = 0V, ID = 2mA
BVDSS
VN0660
VN0655
Drain-to-Source
Breakdown Voltage
V
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
4
-4.5
100
10
V
mV/°C
nA
VGS = VDS , ID = 2mA
Change in VGS(th) with Temperature
Gate Body Leakage
VGS = VDS , ID = 2mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero Gate Voltage Drain Current
µA
1
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.8
1.0
17
VGS = 5V, VDS = 25V
A
0.25
50
V
GS = 10V, VDS = 25V
VGS = 5V, ID = 100mA
GS = 10V, ID = 100mA
RDS(ON)
Static Drain-to-Source
ON-State Resistance
Ω
16
20
V
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
VGS = 10V, ID = 100mA
VDS = 25V, ID = 100mA
Ω
75
85
25
10
m
130
75
20
10
10
20
13
1.8
VGS = 0V, VDS = 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
VDD = 25V,
ID = 0.25A
Rise Time
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
R
GEN = 25Ω
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 100mA
VGS = 0V, ISD = 100mA
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
7-180
VN0655/VN0660
Typical Performance Curves
Output Characteristics
Saturation Characteristics
1.0
0.5
0
1.8
V
= 6V to 10V
GS
1.4
5V
4V
V
= 6V to 10V
GS
1.0
0.6
0.2
5V
4V
3V
20
3V
0
0
1
10
20
30
40
50
0
4
8
12
16
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.1
0.08
0.06
0.04
0.02
0
50
40
30
20
10
0
TO-220
T
T
= -55°C
= 25°C
A
A
T
= 150°C
A
V
= 25V
DS
TO-92
0.5
1.0
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
1.0
0.8
0.6
0.4
0.2
0
TO-220
P
T
= 15W
D
C
= 25°C
TO-220 (pulsed)
TO-220 (DC)
0.1
TO-92 (DC)
TO-92
P
T
= 1W
D
C
T
= 25°C
= 25°C
C
0.01
10
100
1000
0.001
0.01
0.1
1
10
VDS (volts)
tp (seconds)
7-181
VN0655/VN0660
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
50
40
30
20
10
0
1.1
1.0
0.9
V
= 5V
GS
V
= 10V
GS
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
ID (amperes)
Tj (°C)
Transfer Characteristics
= 25V
V(th) and RDS Variation with Temperature
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
2.5
2.0
1.5
1.0
0.5
0
V
DS
V
@ 2mA
GS(th)
R
@ 10V, 1.0A
0.2
0
DS(ON)
0
1
2
3
4
5
-50
0
50
100
150
Tj (°C)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
200
150
100
50
10
8
V
= 10V
V
= 40V
DS
DS
217 pF
6
C
ISS
4
C
80 pF
0.5
OSS
2
C
RSS
0
0
0
10
20
30
40
0
1.0
1.5
2.0
2.5
QG (nanocoulombs)
VDS (volts)
7-182
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