SPN75T04T252RGB [SYNC-POWER]
N-Channel Enhancement Mode MOSFET;型号: | SPN75T04T252RGB |
厂家: | SYNC POWER CROP. |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总7页 (文件大小:474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPN75T04
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
Motor Control
Power Tool
The SPN75T04 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suitable for synchronous rectifier application,
Motor control power management and other Power Tool
circuits. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.
FEATURES
PIN CONFIGURATION
TO-220F TO-251
45V/75A,RDS(ON)=9.5mΩ@VGS=10V
45V/75A,RDS(ON)=14mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
TO-252
PPAK5x6
Exceptional on-resistance and maximum DC
current capability
TO-220F-3L/TO-251S-3L/TO-252-2L/
PPAK5x6-8L package design
PART MARKING
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION (T0-220F-3L/TO-252-2L/TO-251S-3L)
Pin Symbol
Description
1
G
Gate
2
3
D
S
Drain
Source
PIN DESCRIPTION (PPAK5x6-8L)
Pin
Symbol
Description
Source
Source
Source
Gate
1
S
S
2
3
4
5
6
7
8
S
G
D
D
D
D
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN75T04
SPN75T04
SPN75T04
SPN75T04
SPN75T04T220FTGB
SPN75T04ST251TGB
SPN75T04T252RGB
SPN75T04DN8RGB
TO-220F-3L
TO-251S-3L
TO-252-2L
PPAK5x6-8L
※ SPN75T04T220FTGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T04ST251TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T04T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free
※ SPN75T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
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SPN75T04
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
45
V
Gate –Source Voltage
VGSS
ID
±20
75
V
A
TC=25℃
Continuous Drain Current
(TO-220F/TO-251/TO-252)
TC=100℃
58
TC=25℃
56
39
Continuous Drain Current
(PPAK5x6)
ID
A
TC=100℃
Pulsed Drain Current
IDM
PD
280
A
Power Dissipation @ TC=25℃
Power Dissipation @ TC=25℃
TO-220F-3L/TO-252-2L/TO-251S-3L
PPAK5x6-8L
93
83
W
Avalanche Energy with Single Pulse
( TC=25℃, L = 0.4mH. )
EAS
TJ
20
mJ
℃
Operating Junction Temperature
-55/150
℃
Storage Temperature Range
TSTG
RθJC
RθJC
RθJC
-55/150
1.2
℃/W
℃/W
℃/W
Thermal Resistance-Junction to Case (TO-220F-3L)
Thermal Resistance-Junction to Case (TO-252-2L/TO-251S-3L)
Thermal Resistance-Junction to Case (PPAK5x6-8L)
1.35
1.5
Note :
The maximum current rating is package limited at 78A for TO-220F-3L
The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L
The maximum current rating is package limited at 80A for PPAK5x6-8L
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
45
V
1.0
1.55
2.2
IGSS
VDS=0V,VGS=±20V
±100 nA
VDS=36V,VGS=0V,TJ=25°C
VDS=36V,VGS=0V,TJ=100°C
1
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
IDSS
uA
100
VGS=10V,ID=15A
VGS=4.5V,ID=8A
7.5
10
9.5
mΩ
14
RDS(on)
Forward Transconductance
Gate Resistance
gfs
RG
VDS=5V,ID=10A
25
S
VGS=0V,VDS=Open,f=1MHz
IS=20A,VGS=0V
1.5
0.9
Ω
Diode Forward Voltage
VSD
1.2
V
Dynamic
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Qg
Qg
14.5
7
VDS=20V, VGS=10V
ID=10A
nC
pF
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
2
Gate-Drain Charge
2.5
942
309
29
6
Input Capacitance
VDS=20V, VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
5
VDD=20V, ID=10A,VGS=10V
RG=10Ω
nS
td(off)
tf
21
5
Turn-Off Time
Gate resistance
Rg
VGS=0V,VDS=0V, f=1MHz
1.5
Ω
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2020/04/30 Ver 4
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