VSSA3L6S [TAYCHIPST]
Surface Mount Trench MOS Barrier Schottky Rectifier; 表面贴装Trench MOS势垒肖特基整流器
| 型号： | VSSA3L6S |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | Surface Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总2页 (文件大小：3554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSSA3L6S
60V 3.0A
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
Mechanical Data
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
Device marking code
3L6
60
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
3.0
2.5
Maximum DC forward current
(2)
IF
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.49
0.41
-
MAX.
0.58
0.50
1500
30
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 3.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
pF
(2)
Reverse current
VR = 60 V
IR
6.0
Typical junction capacitance
4.0 V, 1 MHz
CJ
395
-
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
(1)
RθJA
115
15
Typical thermal resistance
°C/W
(2)
RθJM
Notes
(1)
Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RθJA - junction to ambient
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; RθJM - junction to mount
(2)
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E-mail: sales@taychipst.com
Web Site: www.taychipst.com
VSSA3L6S
60V 3.0A
Surface Mount Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
VSSA3L6S
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
TM Measured at Terminal
0.2
0
D = tp/T
tp
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
0
25
50
75
100
125
150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
100
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
10
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
TA = 25 °C
1
0.01
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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