VSSB420S [TAYCHIPST]
Surface Mount Trench MOS Barrier Schottky Rectifier; 表面贴装Trench MOS势垒肖特基整流器
| 型号： | VSSB420S |
| 厂家： | 
SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
| 描述： | Surface Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总2页 (文件大小：3861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSSB420S
200V 4.0A
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB420S
V4D
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
200
V
A
(1)
IF
4.0
Maximum DC forward current
(2)
IF
1.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.44
0.71
3
MAX.
1.90
0.80
-
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 4.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 180 V
0.7
4
-
(2)
Reverse current per diode
Typical junction capacitance
IR
150
10
VR = 200 V
1.1
120
mA
pF
4.0 V, 1 MHz
CJ
-
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB420S
UNIT
(1)
RJA
120
15
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance RJM - junction to mount
(2)
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E-mail: sales@taychipst.com
Web Site: www.taychipst.com
VSSB420S
200V 4.0A
Surface Mount Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
VSSB420S
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D = 0.5
D = 0.8
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = tp/T
tp
TM Measured at Terminal
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
0
25
50
75
100
125
150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
100
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
10
1
TA = 100 °C
TA = 125 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
1
0.0001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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