VSSC520S-M3 [VISHAY]
Ideal for automated placement;型号: | VSSC520S-M3 |
厂家: | VISHAY |
描述: | Ideal for automated placement |
文件: | 总4页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VSSC520S-M3
Vishay General Semiconductor
www.vishay.com
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AB (SMC)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
200 V
100 A
0.67 V
150 °C
VRRM
MECHANICAL DATA
IFSM
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
VF at IF = 5.0 A
TJ max.
Base P/N-M3
-
halogen-free and RoHS-compliant,
commercial grade
Package
DO-214AB (SMC)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
V5D
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
200
V
A
(1)
IF
5.0
Maximum DC forward current
(2)
IF
2.2
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Notes
(1)
Units mounted on PCB with 25 mm x 25 mm copper pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended PCB 1 oz. pad area
(2)
Revision: 28-Nov-13
Document Number: 89318
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC520S-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.19
0.67
2.0
MAX.
1.70
0.75
-
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 5.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
V
R = 180 V
2.0
-
(2)
Reverse current per diode
Typical junction capacitance
IR
4
200
25
VR = 200 V
3.2
mA
pF
4.0 V, 1 MHz
CJ
280
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
UNIT
(1)
RJA
95
9
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
Units mounted on PCB with 25 mm x 25 mm copper pad areas; thermal resistance RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
VSSC520S-M3/57T
VSSC520S-M3/9AT
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.235
0.235
57T
9AT
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3500
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6
5
4
3
2
1
0
4.5
4
D = 0.5
D = 0.8
D = 0.3
D = 0.2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 1.0
D = 0.1
T
TM Measured at Terminal
D = tp/T
tp
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Average Forward Current (A)
0
25
50
75
100
125
150
175
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 28-Nov-13
Document Number: 89318
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC520S-M3
Vishay General Semiconductor
www.vishay.com
100
10
1
1000
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.8
0.1
0.1
1
10
100
0
0.2
0.4
0.6
1.0
1.2
1.4
1.6
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
0.0001
TA = 25 °C
1
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 28-Nov-13
Document Number: 89318
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
相关型号:
VSSC520S-M3/9AT
DIODE 2.2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
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