U3660M-B [TEMIC]
Baseband Delay Line (64 Us); 基带延迟线（ 64美元）
| 型号： | U3660M-B |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Baseband Delay Line (64 Us) |
| 文件： | 总7页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U3660M-B
Baseband Delay Line (64 s)
Description
The U3660M is an integrated baseband delay line circuit. It provides a delay of 64 s for the color difference signals,
±(R-Y) and ±(B-Y), in multi-standard TVs.
Features
One line delay time, addition of delayed and non-
delayed output signals
Line-locked by the sandcastle pulse
No crosstalk between SECAM colour carriers
(diaphoty)
Adjustment-free application, VCO without external
components
Comb filtering functions for NTSC colour-difference
signals
Handles negative or positive colour-difference input
signals
Correction of phase errors in the PAL system
Clamping of ac-coupled input signals [±(R-Y)
and ±(B-Y)]
Block Diagram
Ref
13
Bias
V
ref
(B–Y)
14
(B–Y)
12
11
S+H
LPF
Clamping
+
Line memory
Shift register
(R–Y)
(R–Y)
S+H
LPF
16
Clamping
Line memory
+
V
ref
3 MHz
Control
fsc
PLL
V
V
1
3
DD2
9
DD1
SC detector
Clock generator
GND1
GND2
10
5
94 8223
SSC pulse
Figure 1. Block diagram
TELEFUNKEN Semiconductors
1 (7)
Rev. A2, 13-Dec-96
U3660M-B
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
Function
Supply voltage for digital part
Not connected
Ground for digital part
Not connected
Sandcastle pulse input
Not connected
Not connected
V
V
1
16
15
14
13
12
11
10
9
V
DD2
DD2
i(R-Y)
NC
GND2
NC
SC
NC
NC
2
3
4
5
6
7
8
NC
V
GND2
i(B-Y)
NC
NC
R
ref
NC
SC
Not connected
9
V
DD1
Supply voltage for analog part
Ground for analog part
±(R-Y) output signal
±(B-Y) output signal
Resistor for internal reference
±(B-Y) input signal
Not connected
V
V
O(B-Y)
O(R-Y)
10
11
12
13
14
15
16
GND1
V
V
O(R-Y)
O(B-Y)
NC
NC
NC
R
ref
V
i(B-Y)
GND1
NC
V
i(R-Y)
±(R-B) input signal
V
DD1
95 11252
Figure 2. Connection diagram
Absolute Maximum Ratings
Parameters
Supply voltage (Pin 9)
Supply voltage (Pin 1)
Symbol
Value
–0.5 to +7
–0.5 to +7
Unit
V
V
V
DD1
V
DD2
Voltage at Pins 5, 11, 12, 14 and 16
Output current, Pins 11 and 12
Max. power dissipation
V
–0.5 to V
20
1.1
–25 to +150
V
n
S
I
mA
W
°C
V
out
P
T
stg
Storage temperature range
*
Electrostatic protection for input/output pins
±200
*
MIL standard 883D, method 3015.7 machine model (all power pins connected together).
Operating Range
Parameters
Supply voltage range (Pins 1 and 9)
Ambient temperature range
Symbol
Value
4.5 to 6.0
0 to +70
Unit
V
°C
V
S
T
amb
Thermal Resistance
Parameters
Symbol
R
thJA
Value
80
Unit
K/W
Junction ambient
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
U3660M-B
Electrical Characteristics
V
DD
= 5.0 V, T
= +25°C, reference point Pin 3 and Pin 10 connected together,
amb
super-sandcastle frequency of 15.625 kHz; unless otherwise specified.
Parameters
DC-supply
Test Conditions / Pins
Pins 1 and 9
Pin 9
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
(analog part)
V
V
4.5
4.5
5.0
5.0
3.5
1
6.0
6.0
8.0
2
V
V
DD1
Supply voltage
(digital part)
Pin 1
Pin 9
Pin 1
DD2
Supply current
(analog part)
I
mA
mA
mW
S1
S2
Supply current
(digital part)
I
Power dissipation
P
30
60
Colour-difference input signals
Pins 14 and 16
Input signal
(peak-to-peak value)
Pin 16
±(R-Y) PAL and NTSC
±(B-Y) PAL and NTSC
±(R-Y) SECAM
V
0.525
0.665
1.05
1.0
1.0
2.0
2.0
V
V
V
V
i
Pin 14
Pin 16
V
i
V
i
V
i
±(B-Y) SECAM
Pin 14
1.33
Input resistance
Pins 14 and 16
Pins 14 and 16
R
C
40
10
k
14, 16
14, 16
Input capacitance
Input clamping voltage
pF
V
non color input level
during clamping,
Pins 14 and 16
V ,
14 16
1.45
Colour-difference output signals
Pins 11 and 12
Output signal
(peak-to-peak value)
±(R-Y) at Pin 11
±(B-Y) at Pin 12
all standards
all standards
V
O
V
O
1.05
1.33
V
V
Ratio of output amplitudes
at equal input signals
–0.4
0
+0.4
400
dB
V11
V12
DC output voltage
Output resistance
Pins 11 and 12
Pins 11 and 12
ratio V /V
V
R
3.0
V
11, 12
11, 12
Gain for PAL and NTSC
Gain for SECAM
G
v
G
v
5.5
–1.0
6.0
0
6.5
+1.0
dB
dB
O
i
ratio V /V
O
i
Ratio of output signals on
V
i 14,16
= 1.33 V
V
(n)
–0.1
+0.1
dB
Pins 11 and 12 for adjacent (peak-to-peak value)
time samples at constant in- SECAM signals
put signals
V
(n+1)
Noise voltage
(RMS value, Pins 11
and 12)
V
= 0
< 300
V
noise
1.2
mV
i 14,16
R
Gen
f = 10 kHz to 1 MHz
Delay of delayed signals
t
t
63.94
64.0
85
64.06
s
d
Delay of non-delayed
signals
ns
d
TELEFUNKEN Semiconductors
3 (7)
Rev. A2, 13-Dec-96
U3660M-B
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
550
Max.
Unit
ns
Transient time of delayed
signal at Pin 11 respec-
tively Pin 12
300 ns transient of SECAM
t
tr
input signal, C
= 22 pF
load
Transient time of non-
delayed signal at Pin 11
respectively Pin 12
300 ns transient of SECAM
input signal, C = 22 pF
t
tr
350
ns
load
Sandcastle pulse input
Sandcastle frequency
Top pulse voltage
Pin 5
f
14.0
3
15.625
17.0
7
kHz
V
SC
the leading edge of the
burst-key pulse is used for
timing
V
5
Internal slicing level
Input current
V
V –2.0 V –1.5 V –1.0
V
A
slice
5
5
5
I
10
5
Input capacitance
C
5
10
pF
560
+12 V
10
10
5V1
47 F
47 F
22 nF
22 nF
nc
2,4,6,7,8,15
9
1
5
1 nF
1 nF
–(R–Y)
–(B–Y)
–(R–Y)
–(B–Y)
16
14
11
12
Chroma
decoder
U 3660 M
13
10
3
SC pulse
11 k
R
ref
1 M
6.8 k
220 nF
94 8280
Figure 3. Typical application circuit
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
U3660M-B
Internal Pin Circuits
11,12
14,16
94 8678
94 8676
Figure 4. Colour difference signal inputs
Figure 5. Colour difference signal outputs
94 8675
13
5
94 8677
Figure 6. Sandcastle pulse input
Figure 7. Internal reference voltage
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
5 (7)
U3660M-B
Dimensions in mm
Package: DIP16
94 9128
6 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
U3660M-B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
7 (7)
Rev. A2, 13-Dec-96
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