MA4AGSW900-287T [TE]

AIGaAs PIN Diode High Isolation SPST Switch; AIGaAs PIN二极管高隔离度单刀单掷开关
MA4AGSW900-287T
型号: MA4AGSW900-287T
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

AIGaAs PIN Diode High Isolation SPST Switch
AIGaAs PIN二极管高隔离度单刀单掷开关

二极管 开关
文件: 总5页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AIGaAs PIN Diode  
High Isolation SPST Switch  
V 1.00  
Features  
SOT-23 Package Outline (Topview)  
n
n
n
n
31 dB Isolation @ 0 Volts @ 3 GHz  
0.8 dB Loss @ 10 mA @ 3 GHz  
< 10 nS Switching Speed  
GND  
Useable from 50 MHz to 6.0 GHz  
Description  
M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST  
PIN Diode Switch that makes use of Series Diodes featuring  
Lower Loss, Higher Isolation and Faster Switching Speed. This  
device is fabricated on OMCVD epitaxial wafers using a process  
designed for high device uniformity and extremely low parasitics.  
The switch die is fully passivated with silicon nitride and has an  
additional layer of a polymer for scratch and impact protection.  
This protective polymer coating provides additional moisture  
protection to the SOT-23 assembly.  
J1  
J2  
Absolute Maximum Ratings1  
Parameter  
Value  
Applications  
The small 20 fF capacitance, and the low 3.0 W  
“ ON “ resistance of the GaAs PIN diodes allow for higher  
isolation at zero volt bias and lower insertion loss vs.  
comparable SPST switches. This switch is designed for use  
in applications requiring improved RF performance, simple  
D.C. Bias, and small device size.  
Operating Temperature  
Storage Temperature  
Dissipated RF & DC Power  
Incident RF Power  
-65 °C to +125 °C  
-65 °C to +150 °C  
50 mW  
+20 dBm C.W.  
Mounting Temperature  
+235 °C for 10 seconds  
1. Exceeding any of these values may result in permanent  
damage  
Electrical Specifications @ TA = 25 °C  
Units  
Parameter and Test Conditions  
Minimum Typical Maximum  
Value  
Value  
Value  
0.5 GHz to 3.0 GHz Frequency Range  
-
0.8  
1.3  
Insertion Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz  
dB  
dB  
dB  
30  
-
33.0  
13.0  
-
-
Isolation @ 0 Volts @ 3 GHz  
Input / Output Return Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz  
Switching Speed (10 to 90% RF Voltage)1  
NOTES:  
nS  
-
10.0  
-
1. Pin Labeled J1 is the Diode’s Anode  
2. Pin Labeled J2 is the Diode’s Cathode  
3. Pin Labeled GND must be connected to RF & DC Ground  
1. Switching speed is measured using a TTL Controlled , +/- 5 V PIN Diode Driver. Driver delay is not included.  
AIGaAs PIN Diode High Isolation SPST Switch  
Typical RF Performance  
MA4AGSW900-287T  
V 1.00  
MA4AGSW900-287 Insertion Loss vs DC Bias  
0.00  
-0.20  
-0.40  
-0.60  
-0.80  
-1.00  
-1.20  
-1.40  
-1.60  
-1.80  
-2.00  
Bias = 3 mA  
Bias = 5 mA  
Bias = 10 mA  
Bias = 30 mA  
500  
1000  
1500  
2000  
2500  
3000  
Frequency ( GHz )  
MA4AGSW900-287 Return Loss vs D.C. Bias  
0.0  
Bias = 3 mA  
Bias = 5 mA  
Bias = 10 mA  
Bias = 30 mA  
-5.0  
-10.0  
-15.0  
-20.0  
-25.0  
500  
1000  
1500  
2000  
2500  
3000  
Frequency ( GHz )  
2
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
AIGaAs PIN Diode High Isolation SPST Switch  
Typical RF Performance  
MA4AGSW900-287T  
V 1.00  
MA4AGSW900-287 Isolation at 0V D.C. Bias  
0
-5  
Bias = 0V  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
500  
1000  
1500  
2000  
2500  
3000  
Frequency ( GHz )  
3
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
AIGaAs PIN Diode High Isolation SPST Switch  
Mounting Information  
MA4AGSW900-287T  
V 1.00  
The illustration indicates the recommended mounting pad configuration for the SOT-23package. Solder paste containing flux  
should be screened onto the pads to a thickness of 0.005- 0.007 inches. The plastic package device is placed in position,  
firmly adhering to the solder past.  
Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed  
+275 °C and the body temperature does not exceed +250 °C.  
SOT-23 Circuit Layout  
.030  
min.  
0.80  
.090  
2.2  
.035  
min.  
0.90  
.037  
0.95  
0.75  
1.9  
inches  
mm  
Dimenstions:  
SOT-23  
SOT-23 (Case Style 287)  
Millimeters  
Case Style 287  
Inches  
Dim  
Min.  
-
Max.  
Min.  
Max.  
1.22  
A
B
C
D
E
0.048  
-
-
F
-
0.008  
0.040  
0.020  
0.006  
0.20  
1.00  
0.50  
0.15  
N
A
D
-
-
0.013  
0.003  
0.35  
0.08  
B
M
F
0.110  
0.047  
0.119  
0.056  
2.80  
1.20  
3.00  
1.40  
G
L
G
K
H
J
0.037 typical  
0.075 typical  
0.95 typical  
1.90 typical  
H
J
E
K
L
-
-
0.103  
0.024  
-
2.60  
0.60  
C
-
Dim  
M
Min.  
10° max.1  
Note:  
1. Applicable on all  
sides  
N
2° … 30°  
4
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
AIGaAs PIN Diode High Isolation SPST Switch  
Static Sensitivity  
MA4AGSW900-287T  
V 1.00  
Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be  
used when handling these devices.  
Operation of the MA4AGSW900-287T SPST Switch  
Successful operation of the SPST Switch is accomplished by connecting J1 ( PIN 1 ) to a RF Bias Network , J2 ( PIN 2 ) to a  
DC Return Network , and SOT-23 Ground ( PIN 3 ) to Circuit RF and D.C. Ground. Approximately + 3.0 V @ + 5 mA will  
create the Insertion Loss State, and 0 V will produce the Isolation State. The Isolation value is improved slightly by applying  
–3 V D.C. Bias. The SPST switch can be driven from a simple + 5 V TTL Gate Driver.  
SPST Schematic  
D.C. Bias  
GND  
GND  
PIN 3  
GND  
RF Input  
RF Output  
PIN1 (J1)  
PIN2 (J2)  
MA4AGSW900-287  
5
n North America: Tel. (800) 366-2266  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300  
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)  
or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  

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