MA4E1310 [TE]
GaAs Flip Chip Schottky Barrier Diode; 砷化镓倒装芯片肖特基二极管
| 型号： | MA4E1310 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Flip Chip Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Features
•
•
•
•
•
•
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Case Style ODS-1278
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabri-
cated on a OMCVD epitaxial wafer using a proc-
ess designed for high device uniformity and ex-
tremely low parasitics. This device is fully pas-
sivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junc-
tion during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typi-
cal applications include single and double bal-
anced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detec-
tors, etc. This device can be used through 110
GHz.
.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
MA4E1310
Symbol
Units
Min.
.025
Typ.
.010
.040
7
Max.
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz1
Slope Resistance 2
Cj
Ct
pF
pF
.045
9
Rd
Vf1
Vbr
NF
Ohms
Volts
Volts
dB
Forward Voltage at 1mA
.60
4.5
.70
7
.80
Reverse Breakdown Voltage at @ 10uA
SSB Noise Figure ( Estimated )
6.5
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Forward Current vs Temperature
100.00
10.00
1.00
25°C
+125°C
- 50°C
0.10
0.01
0.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
Incident LO Power
-65 °C to +150 °C
+20 dBm
Incident RF Power
+20 dBm .
+235°C for 10 seconds
Class 0
Mounting Temperature
2
Electrostatic Discharge ( ESD ) Classification
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Handling Procedures
The following precautions should be observed to avoid damaging these chips:
Cleanliness:
The chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these devices.
General Handling: The protective polymer coating on the active areas of these die provides scratch
protection, particularly for the metal air bridge which contacts the anode. Die can
be handled with tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
Mounting Techniques
This device is designed to be inserted onto hard or soft substrates with the junction side down. It can be
mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with
the junction side up, and wire or ribbon bonds made to the pads.
Solder Die Attach:
Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not rec-
ommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than
200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150 C. Use a minimum amount of epoxy. Cure epoxy as per manufac-
turer’s schedule. For extended cure times, temperatures should be kept below 200 C.
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Flip Chip Outline Drawing
B
F
E
MA4E1310
Case Style 1278
A
C
G
D
MILLIMETERS
INCHES
MIN.
DIM.
H
MIN.
MAX.
MAX.
A
B
C
D
E
F
0.013
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.0085
0.330
0.660
0.203
0.177
0.406
0.101
0.152
0.190
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.216
0.026
0.008
0.007
0.016
0.004
0.006
0.0075
G
H
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
相关型号：
©2020 ICPDF网 联系我们和版权申明