MA4E2037 [TE]
GaAs Beam Lead Schottky Barrier Diodes; 砷化镓梁式引线肖特基势垒二极管
| 型号： | MA4E2037 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Beam Lead Schottky Barrier Diodes |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E2037, MA4E2039, MA4E2040
GaAs Beam Lead
Schottky Barrier Diodes
Features
Package Outlines1, 2
•
•
•
•
•
Low Series Resistance
Low Capacitance
High Cut-Off Frequency
Silicon Nitride Passivation
Multiple Configurations
MA4E2037
0.210 ± .040
(8.3 ± 1.6)
0.135 ± .010
(5.3 ± .4)
Description
0.180 ± .020
(7.1 ± .8)
0.265 ± .040
(10.4 ± 1.6)
M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and
MA4E2040 series tee are gallium arsenide beam lead Schottky
barrier diodes. These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low parasitics. The high carrier mobility of gallium
arsenide results in lower series resistance than a silicon Schottky
with equivalent capacitance, resulting in lower noise figure and
conversion loss. The diodes are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage to the junction
and the anode airbridge during handling.
0.630 ± .010
(24.8 ± .6)
0.009 (0.4)
0.013 (0.5)
0.060 (2.4)
0.085 (3.4)
MA4E2039
0.135 ± .010
(5.3 ± .4)
0.210 ± .040
(8.3 ± 1.6)
Applications
0.265 ± .040
(10.4 ± 1.6)
0.180 ± .020
(7.1 ± .8)
The high cut-off frequency of these diodes allows use through low
millimeter wave frequencies. Typical applications include single
and double balanced mixers in PCN transceivers and radios,
automotive radar systems and police radar detectors.
0.630 ± .010
(24.8 ± .6)
0.009 (0.4)
0.013 (0.5)
0.060 (2.4)
0.085 (3.4)
The MA4E2039 antiparallel pair is designed for use in subhar-
monically pumped mixers. Close matching of the diode charac-
teristics results in high LO suppression at the RF input.
MA4E2040
0.135 ± .010
(5.3 ± .4)
0.375 ± .015
(14.8 ± .6)
Absolute Maximum Ratings1
0.135 ± .010 0.230 ± .040
(5.3 ± .4) (9.1 ± 1.6)
Parameter
Maximum Ratings
-65°C to +125°C
-65°C to +125°C
+20 dBm
+2- dBm
+235°C for 10 seconds
0.350 ± .040
(13.8 ± 1.6)
0.175 ± .020
(6.9 ± .8)
Operating Temperature
Storage Temperature
Incident LO Power
Incident RF Power
Mounting Temperature
0.700 ± .015
(27.6 ± .6)
0.009 (0.4)
0.013 (0.5)
0.060 (2.4)
0.085 (3.4)
1. Exceeding these limits may cause permanent damage.
Notes: (unless otherwise specified)
1. Dimensions are in mm (mils)
2. Views are with junction side up.
V3.001
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
GaAs Beam Lead Schottky Barrier Diodes
MA4E2037, MA4E2039, MA4E2040
Electrical Specifications @ TA = +25°C
MA4E2037
Single
MA4E2039
Anti-parallel
MA4E2040
Series Tee
Symbol Parameters and Test Conditions
Units
pF
pF
Min.
Typ. Max. Min.
Typ.
Max.
-
Min. Typ. Max.
-
Cj
Ct
Ct
Rs
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz1
Total Capacitance Difference
-
.040
-
.020
.050
-
-
.0203
.0203
.060 0.403 .0503 .0603 .0403 .0503 .0603
pF
-
4
.70
-
-
7
.80
-
-
-
4
.70
.005
-
-
7
.80
.010
-
-
-
.005
4
.010
7
Series Resistance at +10mA2
Ohms
Volts
Volts
Volts
-
-
.60
-
Vf1
Vf
Vbr
Forward Voltage at +1mA
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10µA
.60
-
4.5
.60
-
4.5
.70
.005
7
.80
.010
-
7
-
-
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
Mounting Techniques
Handling Procedures
These devices are designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow
and conductive epoxy.
The following precautions should be observed to avoid damag-
ing these chips:
Cleanliness:
These devices should be handled in a clean environment. Do not
attempt to clean die after installation.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Diode Devices” for Detailed Instructions.
Static Sensitivity:
Schottky barrier diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques should be used
when handling these devices.
General Handling:
Typical Forward Characteristics
These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with care since the leads
may easily be distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum pencil with a #27
tip is recommended for picking and placing. A sharpened
wooden stick which has been dipped in isopropyl alcohol may
also be used as a pick and place tool.
100.00
T
= C
25o
10.00
1.00
0.10
0.01
0.00
T
= C
125o
T
= C
-50o
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
FO RW A RD VO LTAG E (V)
V3.001
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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