MAAP-015016-DIE [TE]
Ka-Band 4 W Power Amplifier;
| 型号： | MAAP-015016-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Ka-Band 4 W Power Amplifier |
| 文件： | 总11页 (文件大小：867K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Features
Functional Diagram
Frequency Range: 32 to 38 GHz
Small Signal Gain: 18 dB
Saturated Power: 37 dBm
Power Added Efficiency: 23%
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method
2010
Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V
Dimensions: 3.09 x 5.67 x 0.05 mm
Description
The MAAP-015016-DIE is
a wideband power
amplifier operating from 32 to 38 GHz, with a
saturated output power of 37 dBm, 23% PAE and
small signal gain of 18 dB.
The design is fully matched to 50 Ohms and
includes on-chip ESD protection and integrated DC
blocking caps on both I/O ports. The device is
manufactured in 0.15 µm GaAs pHEMT device
technology with BCB wafer coating to enhance
ruggedness and repeatability of performance.
Pin Configuration2
Pad
1
Function
RFIN
Description
Input, matched to 50 Ω
Gate Voltage Stage 1 - 3
Drain Voltage Stage 1
Drain Voltage Stage 2
Drain Voltage Stage 3
Gate Voltage Stage 4
Drain Voltage Stage 4
Output, matched to 50 Ω
The part is well suited for Radar and
Communications applications.
2,14
3,13
4,12
5,11
6,10
7,9
VG1,2,3
VD1
VD2
Ordering Information1
VD3
Part Number
MAAP-015016-DIE
MAAP-015016-DIEEV1
1. Die quantity varies.
Package
VG4
Die in Gel Pack1
Evaluation Module
VD4
8
RFOUT
2. Backside metal is RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Electrical Specifications- Pulsed Operation:
Freq. = 32 - 38 GHz, TA = +25°C, Z0 = 50 Ω, Duty Cycle = 5%, Pulse = 5 µs, PIN = 20 dBm
Parameter
Gain
Test Conditions
Units
dB
dB
dB
dB
dBm
%
Min.
—
Typ.
18
Max.
—
—
—
—
—
Input Return Loss
Gain Flatness
—
10
—
—
1.5
14
—
Output Return Loss
Output Power at Saturation
PAE at Saturation
Drain Voltage
—
—
33.0 - 36.0 GHz
36.0 - 36.5 GHz
35
34
37
—
—
—
—
-1.1
-
23
—
—
V
6
—
Gate Voltage
—
V
-0.9
2.5
3.7
-0.8
-
Drain Current
—
A
Drain Current
Under RF Drive (33.0 - 36.5 GHz)
A
2
4.5
Electrical Specifications - CW Operation:
Freq. = 32 - 38 GHz, TA = +25°C, Z0 = 50 Ω, PIN = 20 dBm
Parameter
Gain
Test Conditions
Units
dB
dB
dB
dB
dBm
%
Min.
—
Typ.
18
Max.
—
—
—
—
—
—
—
—
—
Gain Flatness
—
1.5
10
—
Input Return Loss
Output Return Loss
Output Power at Saturation
PAE at Saturation
Drain Voltage
—
—
—
14
—
—
36.5
21
—
—
—
V
—
6
—
Gate Voltage
V
-1.1
-0.9
-0.8
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Absolute Maximum Ratings2,3
Recommended Operating Conditions
Parameter
Input Power, CW, 50 Ω
Drain Voltage
Rating
Parameter
Drain Voltage
Gate Voltage
Drain Current
Rating
+6 V
+23 dBm
+6.5 V
-0.9 V
2.5 A
Gate Voltage
-2 to 0 V
Drain Current
(Under RF Drive)
Drain Current
4.5 A
3.7 A
Gate Current
-20 mA to 5 mA
20 W
Power Dissipation
Storage Temperature
Operating Temperature
Channel Temperature4,5
Handling Procedures
Please observe the following precautions to avoid
damage:
-65°C to +165°C
-40°C to +85°C
+175°C
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
HBM class 1B devices.
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near
these survivability limits.
4. Operating at nominal conditions with TC ≤ +175°C will ensure
MTTF > 1 x 106 hours.
5. Channel Temperature (TC) = TA + Өjc * ((V * I) - Pout
Typical thermal resistance (Өjc) = 4.3°C/W.
a) For TA = 25°C,
)
TC = 90°C @ 6 V, 2.5 A (Quiescent bias only)
b) For TA = 85°C,
TC = 150°C @ 6 V, 2.5 A (Quiescent bias only)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Application Circuit4,5,6,7
Assembly Drawing
4. VG must be biased from both sides (pins 2,6,10,14).
5. VD must be biased from both sides (pins 3,4,5,7,9,11,12,13).
6. It is recommended that bias control circuits are used at VG
and VD. Additional bypass capacitors may also be required
depending on the application, 1 to 47 µF tantalum capacitors
are commonly used here.
7. Each bias pad, VG or VD must have a decoupling capacitor
as close to the device as possible, as is shown in the
Assembly Drawing.
Parts List
Component
C1, C2
Value
2.2 µF
100 pF
C3 - C12
Operating the MAAP-015016
The MAAP-015016 is static sensitive.
Biasing -
Please
It is recommended to use active biasing to keep the
currents constant as the RF power and
temperature vary; this gives the most reproducible
results.
handle with care. To operate the device, follow
these steps.
Using Up-Bias Procedure:
1. Set VG to -1.5 V
2. Set VD to +6 V
3. Adjust VG positive until quiescent ID is
2.5 A (~VG = -0.9)
Pulse Operation -
The performance of the MAAP-015016-DIE is
characterized under pulsed conditions with a
duty cycle of 5% consisting of a pulse width of 5 µs
applied to the drain. Under pulsed conditions the
gate is constantly biased using a gate voltage
directly applied to the PA. It is recommended that
the die is mounted with an adequate thermal
solution.
4. Apply RF signal to RF Input
Using Down-Bias Procedure:
1. Turn off RF supply
2. Reduce VG to -1.5 V
3. Turn VD to 0 V
4. Turn VG to 0 V
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Typical Performance Curves - Pulsed Operation
S-Parameters vs. Frequency
30
20
10
S21
S11
S22
0
-10
-20
-30
31
32
33
34
35
36
37
38
39
Frequency (GHz)
PAE vs. Frequency
Output Power vs. Frequency
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
30
39
25
20
15
10
5
37
35
33
31
29
0
32
33
34
35
36
37
38
32
33
34
35
36
37
38
Frequency (GHz)
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Typical Performance Curves - Pulsed Operation
Gain vs. Input Power
Output Power vs. Input Power
22
38
20
18
34
30
26
22
32 GHz
32 GHz
16
33 GHz
34 GHz
35 GHz
36 GHz
37 GHz
38 GHz
33 GHz
34 GHz
35 GHz
36 GHz
37 GHz
14
38 GHz
12
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power
Drain Current vs. Input Power
4.5
30
32 GHz
33 GHz
32 GHz
33 GHz
25
4.0
34 GHz
35 GHz
36 GHz
37 GHz
38 GHz
34 GHz
35 GHz
36 GHz
37 GHz
38 GHz
20
3.5
15
10
5
3.0
2.5
2.0
0
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Input Power (dBm)
Input Power (dBm)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Typical Performance Curves- CW Operation
S-Parameters vs. Frequency
30
20
10
S21
S11
S22
0
-10
-20
-30
31
32
33
34
35
36
37
38
39
Frequency (GHz)
PAE vs. Frequency
Output Power vs. Frequency
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
22 dBm
12 dBm
14 dBm
16 dBm
18 dBm
20 dBm
22 dBm
38
30
25
20
15
10
5
36
34
32
30
28
0
32
33
34
35
36
37
38
32
33
34
35
36
37
38
Frequency (GHz)
Frequency (GHz)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Typical Performance Curves- CW Operation
Gain vs. Input Power
Output Power vs. Input Power
20
38
18
16
34
30
26
22
32 GHz
32 GHz
14
33 GHz
34 GHz
35 GHz
36 GHz
37 GHz
33 GHz
34 GHz
35 GHz
36 GHz
37 GHz
38 GHz
12
38 GHz
10
6
8
10
12
14
16
18
20
22
24
6
8
10
12
14
16
18
20
22
24
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power
Drain Current vs. Input Power
4.5
30
32 GHz
33 GHz
34 GHz
35 GHz
36 GHz
32 GHz
33 GHz
34 GHz
35 GHz
36 GHz
25
4.0
20
37 GHz
38 GHz
37 GHz
38 GHz
3.5
15
10
5
3.0
2.5
2.0
0
6
8
10
12
14
16
18
20
22
24
6
8
10
12
14
16
18
20
22
24
Input Power (dBm)
Input Power (dBm)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
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MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Die Outline
Thickness: 50 µm
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Pad
1
Function
RFIN
Pad Size
117 x 197
87 x 87
Description
Input, matched to 50 Ω
Gate Voltage Stage 1 - 3
Drain Voltage Stage 1
Drain Voltage Stage 2
Drain Voltage Stage 3
Gate Voltage Stage 4
Drain Voltage Stage 4
Output, matched to 50 Ω
2,14
3,13
4,12
5,11
6,10
7,9
VG1,2,3
VD1
87 x 87
VD2
87 x 87
VD3
207 x 87
87 x 87
VG4
VD4
407 x 87
117 x 197
8
RFOUT
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
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MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Applications Section
Handling and Assembly
Die Attachment
Wire Bonding
This product is 0.050 mm (0.002") thick and has
vias through to the backside to enable grounding to
the circuit. Microstrip substrates should be brought
as close to the die as possible. The mounting
surface should be clean and flat. If using
conductive epoxy, recommended epoxies are
Abletherm 2600A, Tanaka TS3332LD, Die Mat
DM6030HK or DM6030HK-Pt cured in a nitrogen
atmosphere per manufacturer's cure schedule. Ap-
ply epoxy sparingly to avoid getting any on to the
top surface of the die. An epoxy fillet should be visi-
ble around the total die periphery. For additional
information please see the MACOM "Epoxy Speci-
fications for Bare Die" application note.
Windows in the surface passivation above the bond
pads are provided to allow wire bonding to the die's
gold bond pads. The recommended wire bonding
procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance.
Gold 0.025 mm (0.001") diameter wedge or ball
bonds are acceptable for DC Bias connections.
Aluminium wire should be avoided. Thermo-
compression bonding is recommended though
thermo-sonic bonding may be used providing the
ultrasonic content of the bond is minimized. Bond
force, time and ultrasonic's are all critical parame-
ters. Bonds should be made from the bond pads on
the die to the package or substrate. All bonds
should be as short as possible.
If eutectic mounting is preferred, then a flux-less
gold-tin (AuSn) preform, approximately 0.0012
thick, placed between the die and the attachment
surface should be used. A die bonder that utilizes a
heated collet and provides scrubbing action to
ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of
approximately 280ºC (Note: Gold Germanium
should be avoided). The work station temperature
should be 310ºC +/- 10ºC. Exposure to these
extreme temperatures should be kept to minimum.
The collet should be heated, and the die
pre-heated to avoid excessive thermal shock.
Avoidance of air bridges and force impact are
critical during placement.
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
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